component
SSM3J168F
Public Made by Adomby adom
TOSHIBA MOSFETs, TO-236-3(SOT-23-3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSSM3J168F
TOSHIBA · MOSFETs · TO-236-3(SOT-23-3)
SSM3J168F from TOSHIBA, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET; the datasheet gives a gate-source voltage rating of -20/+10 V (VGSS) and a gate leakage current IGSS of ±10 µA max at VGS = -16 V/+10 V. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; the datasheet gives a drain-source breakdown voltage V(BR)DSS of -60 V min and a drain-source on-resistance RDS(ON) of 1.3 Ω typ. at VGS = -10 V. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET; the datasheet gives a drain-source voltage rating VDSS of -60 V, a DC drain current of -400 mA and a pulsed drain current of -800 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-236-3(SOT-23-3) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate leakage current | IGSS | -10 | 10 | µA | Ta = 25 °C; VDS = 0 V, VGS = -16 V/+10 V | 3 | |
| Drain cut-off current | IDSS | -10 | µA | Ta = 25 °C; VDS = -60 V, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | -60 | V | Ta = 25 °C; ID = -1 mA, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage (VGS = 10 V mode) | V(BR)DSX | -50 | V | Ta = 25 °C; ID = -1 mA, VGS = 10 V | 3 | ||
| Gate threshold voltage | Vth | -0.8 | -2 | V | Ta = 25 °C; VDS = -10 V, ID = -1 mA | 3 | |
| Drain-source on-resistance at VGS = -4.0 V | RDS(ON) | 1.6 | 2 | Ω | Ta = 25 °C; ID = -100 mA, VGS = -4.0 V | 3 | |
| Drain-source on-resistance at VGS = -4.5 V | RDS(ON) | 1.4 | 1.9 | Ω | Ta = 25 °C; ID = -100 mA, VGS = -4.5 V | 3 | |
| Drain-source on-resistance at VGS = -10 V | RDS(ON) | 1.3 | 1.55 | Ω | Ta = 25 °C; ID = -200 mA, VGS = -10 V | 3 | |
| Diode forward voltage | VDSF | 0.87 | 1.2 | V | Ta = 25 °C; ID = 400 mA, VGS = 0 V (pulse measurement) | 4 | |
| Drain-source voltage | VDSS | -60 | V | Ta = 25 °C | 2 | ||
| Gate-source voltage | VGSS | -20 | 10 | V | Ta = 25 °C | 2 | |
| Drain current (DC) | ID | -400 | mA | Ta = 25 °C | 2 | ||
| Drain current (pulsed) | IDP | -800 | mA | Ta = 25 °C | 2 | ||
| Power dissipation (device on FR4 board, 645 mm² Cu pad) | PD | 600 | mW | Ta = 25 °C; Note 2: device mounted on 25.4 mm × 25.4 mm × 1.6 mm FR4 glass epoxy board | 2 | ||
| Power dissipation (t ≤ 1 s) | PD | 1200 | mW | Ta = 25 °C; t ≤ 1s; Note 2 | 2 | ||
| Channel temperature | Tch | 150 | °C | 2 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
SSM3J168F - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
- 3D model files:
ssm3j168f-etched.step/ssm3j168f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ssm3j168f.step/ssm3j168f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (9 pp, sha256
18485e202a74d10b, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).