# SSF6007

**Suzhou Good-Ark Elec** · MOSFETs · SOT-23

SSF6007 from Suzhou Good-Ark Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is limited to ±20 V, with threshold of -0.8 to -2 V at ID = -1 mA. |
| 2 | S | passive | Source; continuous source (body diode) current is 130 mA max and pulsed 520 mA max. |
| 3 | D | passive | Drain; drain-source voltage is -50 V max with continuous drain current of -130 mA at TC = 25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Suzhou Good-Ark Elec |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous Drain Current (TC = 25°C, VGS @ -10V) | ID |  |  | -130 | mA | VGS @ -10V, TC = 25°C | 1 |
| Continuous Drain Current (TC = 100°C, VGS @ -10V) | ID |  |  | -100 | mA | VGS @ -10V, TC = 100°C | 1 |
| Pulsed Drain Current | IDM |  |  | -520 | mA |  | 1 |
| Power Dissipation | PD |  |  | 230 | mW | TC = 25°C | 1 |
| Drain-Source Voltage | VDS |  |  | -50 | V |  | 1 |
| Gate-to-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| ESD Rating (HBM module) | ESD |  |  | 1 | KV | HBM module | 1 |
| Operating Junction and Storage Temperature Range | TJ TSTG | -55 |  | 150 | °C |  | 1 |
| Junction-to-ambient thermal resistance (t ≤ 10s) | RθJA |  |  | 556 | ℃/W | t ≤ 10s | 1 |
| Junction-to-Ambient thermal resistance (PCB mounted, steady-state) | RθJA |  |  | 540 | ℃/W | PCB mounted, steady-state | 1 |
| Drain-to-Source breakdown voltage | V(BR)DSS | -50 |  |  | V | VGS = 0V, ID = -10μA | 2 |
| Static Drain-to-Source on-resistance | RDS(on) |  | 2.1 | 7 | Ω | VGS=-10V,ID = -130mA | 2 |
| Gate threshold voltage | VGS(th) | -0.8 |  | -2 | V | VDS = VGS, ID = -1mA | 2 |
| Drain-to-Source leakage current | IDSS |  |  | -0.1 | μA | VDS =-40V,VGS = 0V | 2 |
| Drain-to-Source leakage current | IDSS |  |  | -1 | μA | VDS =-50V,VGS = 0V | 2 |
| Drain-to-Source leakage current | IDSS |  |  | -50 | μA | TJ = 125°C | 2 |
| Gate-to-Source forward leakage | IGSS |  |  | 10 | uA | VGS =20V | 2 |
| Gate-to-Source forward leakage | IGSS | -10 |  |  | uA | VGS = -20V | 2 |
| Forward Transconductance | gfs | 50 |  |  | S | VDS =-25 V ID =-130m A | 2 |
| Diode Forward Voltage | VSD |  |  | -1.3 | V | IS=-130mA, VGS=0V | 2 |
| Continuous Source Current (Body Diode) | IS |  |  | 130 | mA |  | 2 |
| Pulsed Source Current (Body Diode) | ISM |  |  | 520 | mA |  | 2 |

## CAD (KiCad official)

- Symbol: `SSF6007`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `ssf6007-etched.step` / `ssf6007-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ssf6007.step` / `ssf6007.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Suzhou Good-Ark Elec datasheet](docs/ssf6007-datasheet.pdf) (5 pp, sha256 `69d20c50649e2be1`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ssf6007-datasheet.pdf)