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SSD50P03-09D-VB

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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorssd50p03-09d-vbfactory-2.0.0extractor-text

Verified SSD50P03-09D-VB

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: SSD50P03-09D-VB · TO-252 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 8-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-2r9lfkz3/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.6)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ssd50p03-09d-vb.kicad_sym✓ ssd50p03-09d-vb.kicad_mod✓ ssd50p03-09d-vb.step
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SSD50P03-09D-VB

VBsemi Elec · MOSFETs · TO-252

SSD50P03-09D-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the P-channel MOSFET with VGS rated ±20 V and a threshold of -1 to -3 V at ID = -250 µA.
2 D passive Drain; the center lead, which is also the tab, with VDS rated -30 V and continuous current of -60 A (package limited) at TC = 25 °C.
3 S passive Source; the current return terminal of the P-channel MOSFET, with the body diode between source and drain.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGS -20 20 V 1
Pulsed Drain Current IDM -240 A 1
Avalanche Current IAR -50 A 1
Repetitive Avalanche Energy EAR 180 mJ L = 0.1 mH 1
Power Dissipation PD 127 W TC = 25 °C (TO-220AB and TO-263) 1
Power Dissipation PD 3.75 W TA = 25 °C (TO-263) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient (PCB mount) RthJA 40 °C/W PCB mount (TO-263) 1
Junction-to-Ambient (free air) RthJA 62.5 °C/W Free air (TO-220AB) 1
Junction-to-Case RthJC 0.8 °C/W 1
Drain-Source Breakdown Voltage VDS -30 V VGS = 0 V, ID = - 250 µA 2
Gate Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = - 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -50 µA VDS = - 30 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS -250 µA VDS = - 30 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) -120 A VDS = - 5 V, VGS = - 10 V 2
Drain-Source On-State Resistance RDS(on) 0.011 Ω VGS = - 10 V, ID = - 30 A 2
Drain-Source On-State Resistance RDS(on) 0.015 Ω VGS = - 10 V, ID = - 30 A, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.019 Ω VGS = - 10 V, ID = - 30 A, TJ = 175 °C 2
Drain-Source On-State Resistance RDS(on) 0.013 Ω VGS = - 4.5 V, ID = - 20 A 2
Total Gate Charge Qg 160 240 nC VDS = - 15 V, VGS = - 10 V, ID = - 75 A 2
Turn-On Delay Time td(on) 25 40 ns VDD = - 15 V, RL = 0.2, ID - 75 A, VGEN = - 10 V, Rg = 2.5 2
Rise Time tr 225 360 ns VDD = - 15 V, RL = 0.2, ID - 75 A, VGEN = - 10 V, Rg = 2.5 2
Turn-Off Delay Time td(off) 150 240 ns VDD = - 15 V, RL = 0.2, ID - 75 A, VGEN = - 10 V, Rg = 2.5 2
Fall Time tf 210 340 ns VDD = - 15 V, RL = 0.2, ID - 75 A, VGEN = - 10 V, Rg = 2.5 2
Pulsed Current ISM -240 A 2
Forward Voltage VSD -1.2 -1.5 V IF = - 75 A, VGS = 0 V 2
Reverse Recovery Time trr 55 100 ns IF = - 75 A, dI/dt = 100 A/µs 2
Peak Reverse Recovery Current IRM(REC) 2.5 5 A IF = - 75 A, dI/dt = 100 A/µs 2
Reverse Recovery Charge Qrr 0.07 0.25 µC IF = - 75 A, dI/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: SSD50P03-09D-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ssd50p03-09d-vb-etched.step / ssd50p03-09d-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ssd50p03-09d-vb.step / ssd50p03-09d-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 5908189b55af240a, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF