component
SS8550W
Public Made by Adomby adom
TWGMC Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 22d ago |
| viewers | 22d ago |
| package.json | 22d ago |
| page.json | 16d ago |
| README.md | 16d ago |
| ss8550w-etched.glb | 22d ago |
| ss8550w-etched.step | 22d ago |
| ss8550w-hero.glb | 22d ago |
| ss8550w-hero.overlay.json | 22d ago |
| ss8550w.glb | 22d ago |
| ss8550w.kicad_mod | 22d ago |
| ss8550w.kicad_sym | 22d ago |
| ss8550w.lbr | 22d ago |
| ss8550w.step | 22d ago |
SS8550W
TWGMC · Bipolar (BJT) · SOT-323
SS8550W from TWGMC, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the emitter-base breakdown voltage is limited to -5 V (VEBO maximum rating -5 V) and the base-emitter saturation voltage is -1.2 V at IC=-800mA, IB=-80mA. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is -5 V minimum at IE=-100µA, and VEBO is rated at -5 V. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; rated for -1.5 A continuous collector current, VCEO -25 V, VCBO -40 V, and 0.2 W collector power dissipation. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TWGMC |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -40 | V | IC=-100µA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -25 | V | IC=-0.1mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-100µA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | -0.1 | µA | VCB=-40V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | -0.1 | µA | VEB=-5V, IC=0 | 1 | ||
| DC current gain | hFE(1) | 120 | 400 | VCE=-1V, IC=-100mA | 1 | ||
| DC current gain | hFE(2) | 40 | VCE=-1V, IC=-800mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | -0.5 | V | IC=-800mA, IB=-80mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | -1.2 | V | IC=-800mA, IB=-80mA | 1 | ||
| Base-emitter on voltage | VBE(on) | -1 | V | IC=-1V, VCE=-10mA | 1 | ||
| Base-emitter positive favor voltage | VBEF | -1.55 | V | IB=-1A | 1 | ||
| Transition frequency | fT | 100 | MHz | VCE= -10V, IC= -50mA, f=30MHz | 1 | ||
| Output capacitance | Cob | 20 | pF | VCB=-10V, IE=0, f=1MHz | 1 | ||
| Collector-emitter voltage | VCEO | -25 | V | 1 | |||
| Collector-base voltage | VCBO | -40 | V | 1 | |||
| Emitter-base voltage | VEBO | -5 | V | 1 | |||
| Collector current, continuous | IC | -1.5 | A | 1 | |||
| Collector power dissipation | PC | 0.2 | W | 1 | |||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
SS8550W - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
ss8550w-etched.step/ss8550w-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ss8550w.step/ss8550w.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TWGMC datasheet (3 pp, sha256
fd00ca2500b299d0, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).