component

SS8550DTA

Public Made by Adom

by adom

onsemi Bipolar Transistors - BJT, TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorss8550dtafactory-2.0.0extractor-text
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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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SS8550DTA

onsemi · Bipolar Transistors - BJT · TO-92-3

SS8550DTA from onsemi, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Emitter passive Emitter of the PNP transistor; VEBO max −6 V and IEBO max −100 nA at VEB = −6 V.
2 Base passive Base of the PNP transistor; VBE(on) typ −0.66 V (max −1.00 V) at VCE = −1 V, IC = −10 mA.
3 Collector passive Collector of the PNP transistor; IC max −1.5 A, VCEO −25 V and VCBO −40 V.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-92-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage BVCBO -40 V IC = −100 A, IE = 0 2
Collector-Emitter Breakdown Voltage BVCEO -25 V IC = −2 mA, IB = 0 2
Emitter-Base Breakdown Voltage BVEBO -6 V IE = −100 A, IC = 0 2
Collector Cut-Off Current ICBO -100 nA VCB = −35 V, IE = 0 2
Emitter Cut-Off Current IEBO -100 nA VEB = −6 V, IC = 0 2
DC Current Gain hFE1 45 170 VCE = −1 V, IC = −5 mA 2
DC Current Gain hFE2 85 160 300 VCE = −1 V, IC = −100 mA 2
DC Current Gain, D classification hFE2 160 300 hFE CLASSIFICATION D 2
DC Current Gain hFE3 40 80 VCE = −1 V, IC = −800 mA 2
Collector-Emitter Saturation Voltage VCE(sat) -0.28 -0.5 V IC = −800 mA, IB = −80 mA 2
Base-Emitter Saturation Voltage VBE(sat) -0.98 -1.2 V IC = −800 mA, IB = −80 mA 2
Base-Emitter On Voltage VBE(on) -0.66 -1 V VCE = −1 V, IC = −10 mA 2
Output Capacitance Cob 15 pF VCB = −10 V, IE = 0, f = 1 MHz 2
Current Gain Bandwidth Product fT 100 200 MHz VCE = −10 V, IC = −50 mA 2
Collector-Base Voltage VCBO -40 V TA = 25°C 1
Collector-Emitter Voltage VCEO -25 V TA = 25°C 1
Emitter-Base Voltage VEBO -6 V TA = 25°C 1
Collector Current IC -1.5 A TA = 25°C 1
Junction Temperature TJ 150 °C TA = 25°C 1
Storage Temperature TSTG -65 150 °C TA = 25°C 1
Power Dissipation PD 1 W TA = 25°C; PCB FR-4 76 mm x 114 mm x 1.57 mm, minimum land pattern 1
Power Dissipation Derate Above 25°C PD 8 mW/°C TA = 25°C; PCB FR-4 76 mm x 114 mm x 1.57 mm, minimum land pattern 1
Thermal Resistance, Junction-to-Ambient RθJA 125 °C/W TA = 25°C; PCB FR-4 76 mm x 114 mm x 1.57 mm, minimum land pattern 1

CAD (KiCad official)

  • Symbol: SS8550DTA
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92-3 (KiCad packages3D, STEP)
  • 3D model files: ss8550dta-etched.step / ss8550dta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ss8550dta.step / ss8550dta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 c9b93a675fd5e8f6, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF