component
SS8550D331
Public Made by Adomby adom
ALJ Bipolar (BJT), TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
| ss8550d331-etched.glb | 13d ago |
| ss8550d331-etched.step | 13d ago |
| ss8550d331-hero.glb | 13d ago |
| ss8550d331-hero.overlay.json | 13d ago |
| ss8550d331.glb | 13d ago |
| ss8550d331.kicad_mod | 13d ago |
| ss8550d331.kicad_sym | 13d ago |
| ss8550d331.lbr | 13d ago |
| ss8550d331.step | 13d ago |
SS8550D331
ALJ · Bipolar (BJT) · TO-92
SS8550D331 from ALJ, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Emitter | passive | Emitter terminal of this PNP transistor, with emitter-base breakdown voltage V(BR)EBO of -5 V at IE = -100µA and maximum emitter-base voltage VEBO of -5 V. |
| 2 | Base | passive | Base terminal of this PNP transistor, which saturates with VBE(sat) of -1.2 V at IC = -800mA and IB = -80mA, with the absolute maximum emitter-base voltage rated at -5 V. |
| 3 | Collector | passive | Collector terminal of this PNP transistor, rated for collector current IC of -1.5 A, collector-base voltage VCBO of -40 V and collector-emitter voltage VCEO of -25 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ALJ |
| Package | TO-92 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector base voltage | VCBO | -40 | V | 1 | |||
| Collector emitter voltage | VCEO | -25 | V | 1 | |||
| Emitter base voltage | VEBO | -5 | V | 1 | |||
| Collector current | IC | -1.5 | A | 1 | |||
| Junction temperature | Tj | 150 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 1 | ||
| Collector-base breakdown voltage | V(BR)CBO | -40 | V | IC = -100µA, IE = 0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -25 | V | IC = -1mA, IB = 0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE = -100µA, IC = 0 | 1 | ||
| Collector cut-off current | ICBO | -100 | nA | VCB = -40V, IE = 0 | 1 | ||
| Emitter cut-off current | IEBO | -100 | nA | VEB = -5V, IC = 0 | 1 | ||
| DC current gain | hFE(1) | 160 | 300 | VCE = -1V, IC = -100mA | 1 | ||
| DC current gain | hFE(2) | 40 | VCE = -1V, IC = -800mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | -0.5 | V | IC = -800mA, IB = -80mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | -1.2 | V | IC = -800mA, IB = -80mA | 1 | ||
| Base-emitter voltage | VBE(on) | -1 | V | VCE = -1V, IC = -10mA | 1 | ||
| Out capacitance | Cob | 20 | pF | VCB = -10V, IE=0mA, f=1MHZ | 1 | ||
| Transition frequency | fT | 100 | MHz | VCE =-10V, IC =-50mA,f=30MHz | 1 |
CAD (KiCad official)
- Symbol:
SS8550D331 - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
ss8550d331-etched.step/ss8550d331-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ss8550d331.step/ss8550d331.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ALJ datasheet (2 pp, sha256
9b96e9d398f5c521, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).