component
SS8550-MS
Public Made by Adomby adom
MSKSEMI Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| package.json | 23d ago |
| page.json | 23d ago |
| README.md | 23d ago |
| ss8550-ms-etched.glb | 23d ago |
| ss8550-ms-etched.step | 23d ago |
| ss8550-ms-hero.glb | 23d ago |
| ss8550-ms-hero.overlay.json | 23d ago |
| ss8550-ms.glb | 23d ago |
| ss8550-ms.kicad_mod | 23d ago |
| ss8550-ms.kicad_sym | 23d ago |
| ss8550-ms.lbr | 23d ago |
| ss8550-ms.step | 23d ago |
SS8550-MS
MSKSEMI · Bipolar (BJT) · SOT-23
SS8550-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor, with emitter-base voltage limited to VEBO -5 V and emitter-base breakdown V(BR)EBO of -5 V. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor, with absolute maximum collector current IC of -1.5 A and emitter-base voltage VEBO of -5 V. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor, with absolute maximum collector-base voltage VCBO of -40 V, collector-emitter voltage VCEO of -25 V, and collector current IC of -1.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -40 | V | IC=-100µA, IE=0 | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -25 | V | IC=-0.1mA, IB=0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-100µA, IC=0 | 2 | ||
| Collector cut-off current | ICBO | -100 | nA | VCB=-40V, IE=0 | 2 | ||
| Emitter cut-off current | IEBO | -100 | nA | VEB=-5V, IC=0 | 2 | ||
| DC current gain | hFE(1) | 120 | 400 | VCE=-1V, IC=-100mA | 2 | ||
| DC current gain | hFE(2) | 40 | VCE=-1V, IC=-800mA | 2 | |||
| Collector-emitter saturation voltage | VCE(sat) | -0.5 | V | IC=-800mA, IB=-80mA | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | -1.2 | V | IC=-800mA, IB=-80mA | 2 | ||
| Base-emitter voltage | VBE | -1 | V | VCE=-1V, IC=-10mA | 2 | ||
| Transition frequency | fT | 100 | MHz | VCE=-10V, IC=-50mA, f=30MHz | 2 | ||
| Collector output capacitance | Cob | 20 | pF | VCB=-10V, IE=0, f=1MHz | 2 | ||
| Collector-base voltage | VCBO | -40 | V | Ta=25℃ | 2 | ||
| Collector-emitter voltage | VCEO | -25 | V | Ta=25℃ | 2 | ||
| Emitter-base voltage | VEBO | -5 | V | Ta=25℃ | 2 | ||
| Collector current | IC | -1.5 | A | Ta=25℃ | 2 | ||
| Collector power dissipation | PC | 300 | mW | Ta=25℃ | 2 | ||
| Junction temperature | Tj | 150 | ℃ | 2 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 2 | ||
| Thermal resistance from junction to ambient | RΘJA | 417 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
SS8550-MS - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ss8550-ms-etched.step/ss8550-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ss8550-ms.step/ss8550-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (5 pp, sha256
fb2b3c669a537813, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).