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SS8050DTA

Public Made by Adom

by adom

onsemi Bipolar Transistors - BJT, TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorss8050dtafactory-2.0.0extractor-text
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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SS8050DTA

onsemi · Bipolar Transistors - BJT · TO-92-3

SS8050DTA from onsemi, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Emitter passive Emitter terminal of the NPN transistor; VEBO max 6 V.
2 Base passive Base terminal of the NPN transistor; drive with IB for IC up to 1.5 A (VCE(sat) 0.5 V max at IC = 800 mA, IB = 80 mA).
3 Collector passive Collector terminal of the NPN transistor; VCBO max 40 V, VCEO max 25 V, IC max 1.5 A.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-92-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage BVCBO 40 V IC = 100 A, IE = 0 2
Collector-Emitter Breakdown Voltage BVCEO 25 V IC = 2 mA, IB = 0 2
Emitter-Base Breakdown Voltage BVEBO 6 V IE = 100 A, IC = 0 2
Collector Cut-Off Current ICBO 100 nA VCB = 35 V, IE = 0 2
Emitter Cut-Off Current IEBO 100 nA VEB = 6 V, IC = 0 2
DC Current Gain hFE1 45 VCE = 1 V, IC = 5 mA 2
DC Current Gain hFE2 85 300 VCE = 1 V, IC = 100 mA 2
DC Current Gain, D classification hFE2 160 300 hFE CLASSIFICATION D, VCE = 1 V, IC = 100 mA 2
DC Current Gain hFE3 40 VCE = 1 V, IC = 800 mA 2
Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC = 800 mA, IB = 80 mA 2
Base-Emitter Saturation Voltage VBE(sat) 1.2 V IC = 800 mA, IB = 80 mA 2
Base-Emitter On Voltage VBE(on) 1 V VCE = 1 V, IC = 10 mA 2
Output Capacitance Cob 9 pF VCB = 10 V, IE = 0, f = 1 MHz 2
Current Gain Bandwidth Product fT 100 MHz VCE = 10 V, IC = 50 mA 2
Collector-Base Voltage VCBO 40 V TA = 25°C 1
Collector-Emitter Voltage VCEO 25 V TA = 25°C 1
Emitter-Base Voltage VEBO 6 V TA = 25°C 1
Collector Current IC 1.5 A TA = 25°C 1
Junction Temperature TJ 150 °C TA = 25°C 1
Storage Temperature TSTG -65 150 °C TA = 25°C 1
Power Dissipation PD 1 W TA = 25°C, Note 1 PCB 1
Derate Above 25°C 8 mW/°C Note 1 PCB 1
Thermal Resistance, Junction-to-Ambient RJA 125 °C/W Note 1 PCB 1

CAD (KiCad official)

  • Symbol: SS8050DTA
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92-3 (KiCad packages3D, STEP)
  • 3D model files: ss8050dta-etched.step / ss8050dta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ss8050dta.step / ss8050dta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 d66489e4f41e2973, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF