component
SS8050D331
Public Made by Adomby adom
ALJ Bipolar (BJT), TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 1d ago |
| viewers | 1d ago |
| package.json | 1d ago |
| page.json | 1d ago |
| README.md | 1d ago |
| ss8050d331-etched.glb | 1d ago |
| ss8050d331-etched.step | 1d ago |
| ss8050d331-hero.glb | 1d ago |
| ss8050d331-hero.overlay.json | 1d ago |
| ss8050d331.glb | 1d ago |
| ss8050d331.kicad_mod | 1d ago |
| ss8050d331.kicad_sym | 1d ago |
| ss8050d331.lbr | 1d ago |
| ss8050d331.step | 1d ago |
| verification.json | 1d ago |
SS8050D331
ALJ · Bipolar (BJT) · TO-92
SS8050D331 from ALJ, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Emitter | passive | Emitter terminal of the NPN transistor, with emitter-base breakdown voltage V(BR)EBO of 5 V minimum and VEBO rated at 5 V. |
| 2 | Base | input | Base terminal; base-emitter saturation voltage VBE(sat) is 1.2 V at IC = 800mA with IB = 80mA. |
| 3 | Collector | passive | Collector terminal; maximum ratings are VCBO 40 V, VCEO 25 V and collector current IC 1.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ALJ |
| Package | TO-92 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 40 | V | IC = 100µA, IE = 0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 25 | V | IC = 1mA, IB = 0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE = 100µA, IC = 0 | 1 | ||
| Collector cut-off current | ICBO | 100 | nA | VCB = 40V, IE = 0 | 1 | ||
| Emitter cut-off current | IEBO | 100 | nA | VEB = 5V, IC = 0 | 1 | ||
| DC current gain hFE(1) | hFE(1) | 100 | 400 | VCE = 1V, IC = 100mA | 1 | ||
| DC current gain hFE(2) | hFE(2) | 40 | VCE = 1V, IC = 800mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | 0.5 | V | IC = 800mA, IB = 80mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.2 | V | IC = 800mA, IB = 80mA | 1 | ||
| Base-emitter voltage | VBE | 1 | V | VCE = 1V, IC = 10mA | 1 | ||
| Transition frequency | fT | 100 | MHz | VCE = 10V, IC = 50mA, f = 30MHz | 1 | ||
| Collector-base voltage | VCBO | 40 | V | 1 | |||
| Collector-emitter voltage | VCEO | 25 | V | 1 | |||
| Emitter-base voltage | VEBO | 5 | V | 1 | |||
| Collector current | IC | 1.5 | A | 1 | |||
| Junction temperature | Tj | 150 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 1 | ||
| Collector power dissipation | PCM | 1 | W | TA = 25°C | 1 | ||
| Collector power dissipation | PCM | 2 | W | TC = 25°C | 1 | ||
| Collector power dissipation | PC | 625 | mW | 1 | |||
| Thermal resistance from junction to ambient | 200 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
SS8050D331 - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
ss8050d331-etched.step/ss8050d331-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ss8050d331.step/ss8050d331.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ALJ datasheet (3 pp, sha256
26bedf810d57cfcb, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).