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SS8050-MS

Public Made by Adom

by adom

MSKSEMI Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsss8050-msfactory-2.0.0extractor-text
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Contents

README

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SS8050-MS

MSKSEMI · Bipolar (BJT) · SOT-23

SS8050-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the NPN transistor; the datasheet rates the emitter-base voltage VEBO at 5 V and the emitter-base breakdown V(BR)EBO at 5 V minimum.
2 EMITTER passive Emitter terminal of the NPN transistor; the absolute maximum emitter-base voltage VEBO is 5 V and the collector current IC is rated 1.5 A.
3 COLLECTOR passive Collector terminal of the NPN transistor; the datasheet rates VCBO at 40 V, VCEO at 25 V, and collector current IC at 1.5 A.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 40 V IC= 100μA, IE=0 2
Collector-emitter breakdown voltage V(BR)CEO 25 V IC= 0.1mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO 5 V IE=100μA, IC=0 2
Collector cut-off current ICBO 0.1 μA VCB=40V, IE=0 2
Emitter cut-off current IEBO 0.1 μA VEB= 5V, IC=0 2
DC current gain hFE(1) 120 400 VCE=1V, IC= 100mA 2
DC current gain hFE(2) 40 VCE=1V, IC= 800mA 2
Collector-emitter saturation voltage VCE(sat) 0.5 V IC=800mA, IB= 80mA 2
Base-emitter saturation voltage VBE(sat) 1.2 V IC=800mA, IB= 80mA 2
Transition frequency fT 100 MHz VCE=10V, IC= 50mA, f=30MHz 2
Collector-base voltage VCBO 40 V 2
Collector-emitter voltage VCEO 25 V 2
Emitter-base voltage VEBO 5 V 2
Collector current IC 1.5 A 2
Collector power dissipation PC 300 mW 2
Thermal resistance, junction to ambient RΘJA 417 ℃/W 2
Operation junction and storage temperature range TJ,Tstg -55 150 ℃ 2

CAD (KiCad official)

  • Symbol: SS8050-MS
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ss8050-ms-etched.step / ss8050-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ss8050-ms.step / ss8050-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (5 pp, sha256 f6b5ed3e00f2898a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF