component
SS8050-HQ
Public Made by Adomby adom
Yangzhou Yangjie Elec Tech Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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|---|---|
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| page.json | 17d ago |
| README.md | 17d ago |
| ss8050-hq-etched.glb | 24d ago |
| ss8050-hq-etched.step | 24d ago |
| ss8050-hq-hero.glb | 24d ago |
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| ss8050-hq.glb | 24d ago |
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| ss8050-hq.step | 24d ago |
SS8050-HQ
Yangzhou Yangjie Elec Tech · Bipolar (BJT) · SOT-23
SS8050-HQ from Yangzhou Yangjie Elec Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; the datasheet gives VEBO of 5 V maximum and hFE(1) of 200-350 for the H rank at VCE=1.0V, IC=100mA. |
| 2 | E | passive | Emitter of the NPN transistor; the datasheet gives VEBO of 5 V maximum and total device dissipation of 300 mW. |
| 3 | C | passive | Collector of the NPN transistor; the datasheet gives VCBO of 40 V, VCEO of 25 V and continuous IC of 1.5 A maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 40 | V | Ta=25℃ unless otherwise noted | 1 | ||
| Collector-Emitter Voltage | VCEO | 25 | V | Ta=25℃ unless otherwise noted | 1 | ||
| Emitter-Base Voltage | VEBO | 5 | V | Ta=25℃ unless otherwise noted | 1 | ||
| Collector Current -Continuous | IC | 1.5 | A | Ta=25℃ unless otherwise noted | 1 | ||
| Total Device Dissipation | PD | 300 | mW | Ta=25℃ unless otherwise noted | 1 | ||
| Junction Temperature | Tj | 150 | ℃ | Ta=25℃ unless otherwise noted | 1 | ||
| Storage Temperature | TSTG | -55 | 150 | ℃ | 1 | ||
| Collector-base breakdown voltage | V(BR)CBO | 40 | V | IC=100μA,IE=0 | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 25 | V | IC=100μA,IB=0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=100μA,IC=0 | 2 | ||
| Collector cut-off current (base open) | ICBO | 100 | nA | VCB=40V, IE=0 | 2 | ||
| Collector cut-off current | ICEO | 100 | nA | VCE=20V, IB=0 | 2 | ||
| Emitter cut-off current | IEBO | 100 | nA | VEB=5V, IC=0 | 2 | ||
| DC current gain hFE(1) | hFE(1) | 120 | 350 | VCE=1.0V,IC=100mA | 2 | ||
| DC current gain hFE(2) | hFE(2) | 40 | VCE=1.0V,IC=800mA | 2 | |||
| Collector-emitter saturation voltage | VCE(sat) | 0.5 | V | IC=800mA,IB=80mA | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.2 | V | IC=800mA,IB=80mA | 2 | ||
| Transition frequency | fT | 100 | MHz | VCE=10Vdc,IC=50mA,f=30MHz | 2 |
CAD (KiCad official)
- Symbol:
SS8050-HQ - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ss8050-hq-etched.step/ss8050-hq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ss8050-hq.step/ss8050-hq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (5 pp, sha256
3bbc1f73be9ea95d, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).