component
SS8050-HQ
Public Made by Adomby adom
Yangzhou Yangjie Elec Tech Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ss8050-hq: specified limits as data (metadata.characteristics, 18 rows from the datasheet)
2 files changed
+249−1
README.md+25@@ -21,6 +21,31 @@ SS8050-HQ from Yangzhou Yangjie Elec Tech, in a SOT-23. Pinout and pin descripti | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-Base Voltage | VCBO | | | 40 | V | Ta=25℃ unless otherwise noted | 1 |+| Collector-Emitter Voltage | VCEO | | | 25 | V | Ta=25℃ unless otherwise noted | 1 |+| Emitter-Base Voltage | VEBO | | | 5 | V | Ta=25℃ unless otherwise noted | 1 |+| Collector Current -Continuous | IC | | | 1.5 | A | Ta=25℃ unless otherwise noted | 1 |+| Total Device Dissipation | PD | | | 300 | mW | Ta=25℃ unless otherwise noted | 1 |+| Junction Temperature | Tj | | | 150 | ℃ | Ta=25℃ unless otherwise noted | 1 |+| Storage Temperature | TSTG | -55 | | 150 | ℃ | | 1 |+| Collector-base breakdown voltage | V(BR)CBO | 40 | | | V | IC=100μA,IE=0 | 2 |+| Collector-emitter breakdown voltage | V(BR)CEO | 25 | | | V | IC=100μA,IB=0 | 2 |+| Emitter-base breakdown voltage | V(BR)EBO | 5 | | | V | IE=100μA,IC=0 | 2 |+| Collector cut-off current (base open) | ICBO | | | 100 | nA | VCB=40V, IE=0 | 2 |+| Collector cut-off current | ICEO | | | 100 | nA | VCE=20V, IB=0 | 2 |+| Emitter cut-off current | IEBO | | | 100 | nA | VEB=5V, IC=0 | 2 |+| DC current gain hFE(1) | hFE(1) | 120 | | 350 | | VCE=1.0V,IC=100mA | 2 |+| DC current gain hFE(2) | hFE(2) | 40 | | | | VCE=1.0V,IC=800mA | 2 |+| Collector-emitter saturation voltage | VCE(sat) | | | 0.5 | V | IC=800mA,IB=80mA | 2 |+| Base-emitter saturation voltage | VBE(sat) | | | 1.2 | V | IC=800mA,IB=80mA | 2 |+| Transition frequency | fT | 100 | | | MHz | VCE=10Vdc,IC=50mA,f=30MHz | 2 |+ ## CAD (KiCad official) - Symbol: `SS8050-HQ`
page.json+224−1@@ -148,6 +148,229 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "3bbc1f73be9ea95d",+ "rows": [+ {+ "name": "Collector-Base Voltage",+ "symbol": "VCBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "Ta=25℃ unless otherwise noted",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Voltage",+ "symbol": "VCEO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "Ta=25℃ unless otherwise noted",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Voltage",+ "symbol": "VEBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "Ta=25℃ unless otherwise noted",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector Current -Continuous",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.5,+ "conditions": "Ta=25℃ unless otherwise noted",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "Ta=25℃ unless otherwise noted",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction Temperature",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "Ta=25℃ unless otherwise noted",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-base breakdown voltage",+ "symbol": "V(BR)CBO",+ "kind": "electrical",+ "unit": "V",+ "min": 40,+ "typ": null,+ "max": null,+ "conditions": "IC=100μA,IE=0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-emitter breakdown voltage",+ "symbol": "V(BR)CEO",+ "kind": "electrical",+ "unit": "V",+ "min": 25,+ "typ": null,+ "max": null,+ "conditions": "IC=100μA,IB=0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Emitter-base breakdown voltage",+ "symbol": "V(BR)EBO",+ "kind": "electrical",+ "unit": "V",+ "min": 5,+ "typ": null,+ "max": null,+ "conditions": "IE=100μA,IC=0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector cut-off current (base open)",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VCB=40V, IE=0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector cut-off current",+ "symbol": "ICEO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VCE=20V, IB=0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Emitter cut-off current",+ "symbol": "IEBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VEB=5V, IC=0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC current gain hFE(1)",+ "symbol": "hFE(1)",+ "kind": "electrical",+ "unit": "",+ "min": 120,+ "typ": null,+ "max": 350,+ "conditions": "VCE=1.0V,IC=100mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC current gain hFE(2)",+ "symbol": "hFE(2)",+ "kind": "electrical",+ "unit": "",+ "min": 40,+ "typ": null,+ "max": null,+ "conditions": "VCE=1.0V,IC=800mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-emitter saturation voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.5,+ "conditions": "IC=800mA,IB=80mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base-emitter saturation voltage",+ "symbol": "VBE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "IC=800mA,IB=80mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Transition frequency",+ "symbol": "fT",+ "kind": "electrical",+ "unit": "MHz",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "VCE=10Vdc,IC=50mA,f=30MHz",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +412,4 @@ "visibility": { "public": true }-}+}