# SS8050-H

**Shandong Jingdao Microelectronics** · Bipolar (BJT) · SOT-23

SS8050-H from Shandong Jingdao Microelectronics, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the NPN transistor; the datasheet gives an emitter-base voltage rating of VEBO 5 V maximum and an emitter-base breakdown V(BR)EBO minimum of 5 V. |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor; the emitter-base reverse voltage is limited to 5 V (VEBO). |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; the datasheet rates VCBO 40 V, VCEO 25 V, continuous collector current IC 1.5 A, and collector power dissipation PC 300 mW. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Shandong Jingdao Microelectronics |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 40 |  |  | V | IC = 100uA, IE = 0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | 25 |  |  | V | IC = 0.1 mA, IB = 0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 |  |  | V | IE = 100uA, IC = 0 | 1 |
| Collector cut-off current | ICBO |  |  | 0.1 | uA | VCB = 40V, IE = 0 | 1 |
| Emitter cut-off current | IEBO |  |  | 0.1 | uA | VEB = 5V, IC = 0 | 1 |
| DC current gain (rank H) | hFE1 | 300 |  | 400 |  | VCE = 1V, IC = 100mA | 1 |
| DC current gain | hFE2 | 40 |  |  |  | VCE = 1V, IC = 800mA | 1 |
| Transition frequency | fT | 100 |  |  | MHz | VCE = 10V, IC = 50mA, f=30MHz | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | 0.5 | V | IC = 800mA, IB = 80mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | 1.2 | V | IC = 800mA, IB = 80mA | 1 |
| Collector-base voltage | VCBO |  |  | 40 | V |  | 1 |
| Collector-emitter voltage | VCEO |  |  | 25 | V |  | 1 |
| Emitter-base voltage | VEBO |  |  | 5 | V |  | 1 |
| Collector current continuous | IC |  |  | 1.5 | A |  | 1 |
| Collector power dissipation | PC |  |  | 300 | mW | Ta=25℃ | 1 |
| Operation junction and storage temperature range | TJ,Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal resistance from junction to ambient | RthJA |  | 417 |  | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `SS8050-H`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `ss8050-h-etched.step` / `ss8050-h-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ss8050-h.step` / `ss8050-h.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Shandong Jingdao Microelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603001090623893504) (3 pp, sha256 `e376690983182fcf`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ss8050-h-datasheet.pdf)