component
SS8050 200-350
Public Made by Adomby adom
DOWO Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSS8050 200-350
DOWO · Bipolar (BJT) · SOT-23
SS8050 200-350 from DOWO, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; the datasheet's emitter-base breakdown rating (VEBO) is 5 V, and the device's base-emitter saturation voltage is specified under the test conditions IC = 800 mA, IB = 80 mA. |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor, rated for an emitter-base voltage of 5 V (VEBO) in the absolute maximum ratings. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor, rated for VCBO 40 V, VCEO 25 V and continuous collector current IC 1.5 A, with collector power dissipation PC of 300 mW. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DOWO |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 40 | V | IC = 100uA, IE = 0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 25 | V | IC = 0.1 mA, IB = 0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE = 100uA, IC = 0 | 1 | ||
| Collector cut-off current | ICBO | 0.1 | uA | VCB = 40V, IE = 0 | 1 | ||
| Emitter cut-off current | IEBO | 0.1 | uA | VEB = 5V, IC = 0 | 1 | ||
| Collector cut-off current (ICEO) | ICEO | 0.1 | uA | VCE = 20V, IE = 0 | 1 | ||
| DC current gain hFE1 | hFE1 | 120 | 400 | VCE = 1V, IC = 100mA | 1 | ||
| DC current gain, rank J range (200-350) | hFE1 | 200 | 350 | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | 0.5 | V | IC = 800mA, IB = 80mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.2 | V | IC = 800mA, IB = 80mA | 1 | ||
| Transition frequency | fT | 100 | MHZ | VCE = 10V, IC = 50mA, f=30MHz | 1 | ||
| Collector-base voltage | VCBO | 40 | V | 1 | |||
| Collector-emitter voltage | VCEO | 25 | V | 1 | |||
| Emitter-base voltage | VEBO | 5 | V | 1 | |||
| Collector current, continuous | IC | 1.5 | A | 1 | |||
| Collector power dissipation | PC | 300 | mW | 1 | |||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction to ambient | RthJA | 417 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
SS8050 200-350 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ss8050-200-350-etched.step/ss8050-200-350-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ss8050-200-350.step/ss8050-200-350.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: DOWO datasheet (4 pp, sha256
830feddb073aeeda, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).