component
SS315G
Public Made by Adomby adom
Shikues Schottky Barrier Diodes (SBD), SMA. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SS315G
Shikues · Schottky Barrier Diodes (SBD) · SMA
SS315G from Shikues, in a SMA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode terminal of the SMA package, listed as pin 1 in the PINNING table (top view) of the SS32G-SS320G family datasheet. |
| 2 | Anode | passive | Anode terminal of the SMA package, listed as pin 2 in the PINNING table (top view) of the SS32G-SS320G family datasheet. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | SMA |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | VRRM | 150 | V | 1 | |||
| Maximum RMS voltage | VRMS | 105 | V | 1 | |||
| Maximum DC Blocking Voltage | VDC | 150 | V | 1 | |||
| Maximum Average Forward Rectified Current | IF(AV) | 3 | A | 1 | |||
| Peak Forward Surge Current | IFSM | 80 | A | 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) | 1 | ||
| Max Instantaneous Forward Voltage | VF | 0.95 | V | at 3 A | 1 | ||
| Maximum DC Reverse Current at Rated DC Reverse Voltage, TJ = 25 °C | IR | 0.3 | mA | TJ = 25 °C, at rated DC reverse voltage | 1 | ||
| Maximum DC Reverse Current at Rated DC Reverse Voltage, Ta = 100 °C | IR | 3 | mA | Ta = 100 °C, at rated DC reverse voltage | 1 | ||
| Typical Junction Capacitance | Cj | 180 | pF | measured at 1 MHz and applied reverse voltage of 4 V DC | 1 | ||
| Operating Junction Temperature Range | Tj | -55 | 125 | °C | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Typical Thermal Resistance | RθJA | 70 | °C/W | P.C.B. mounted with 2.0" x 2.0" (5 x 5 cm) copper pad areas | 1 |
CAD (KiCad official)
- Symbol:
SS315G - Footprint:
Diode_SMD:D_SMA - 3D model: SMA (KiCad packages3D, STEP)
- 3D model files:
ss315g-etched.step/ss315g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ss315g.step/ss315g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shikues datasheet (3 pp, sha256
e73e39ee53a285f9, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SS315G
**Shikues** · Schottky Barrier Diodes (SBD) · SMA
SS315G from Shikues, in a SMA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode terminal of the SMA package, listed as pin 1 in the PINNING table (top view) of the SS32G-SS320G family datasheet. |
| 2 | Anode | passive | Anode terminal of the SMA package, listed as pin 2 in the PINNING table (top view) of the SS32G-SS320G family datasheet. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | SMA |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | VRRM | | | 150 | V | | 1 |
| Maximum RMS voltage | VRMS | | | 105 | V | | 1 |
| Maximum DC Blocking Voltage | VDC | | | 150 | V | | 1 |
| Maximum Average Forward Rectified Current | IF(AV) | | | 3 | A | | 1 |
| Peak Forward Surge Current | IFSM | | | 80 | A | 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) | 1 |
| Max Instantaneous Forward Voltage | VF | | | 0.95 | V | at 3 A | 1 |
| Maximum DC Reverse Current at Rated DC Reverse Voltage, TJ = 25 °C | IR | | | 0.3 | mA | TJ = 25 °C, at rated DC reverse voltage | 1 |
| Maximum DC Reverse Current at Rated DC Reverse Voltage, Ta = 100 °C | IR | | | 3 | mA | Ta = 100 °C, at rated DC reverse voltage | 1 |
| Typical Junction Capacitance | Cj | | 180 | | pF | measured at 1 MHz and applied reverse voltage of 4 V DC | 1 |
| Operating Junction Temperature Range | Tj | -55 | | 125 | °C | | 1 |
| Storage Temperature Range | Tstg | -55 | | 150 | °C | | 1 |
| Typical Thermal Resistance | RθJA | | 70 | | °C/W | P.C.B. mounted with 2.0" x 2.0" (5 x 5 cm) copper pad areas | 1 |
## CAD (KiCad official)
- Symbol: `SS315G`
- Footprint: `Diode_SMD:D_SMA`
- 3D model: SMA (KiCad packages3D, STEP)
- 3D model files: `ss315g-etched.step` / `ss315g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ss315g.step` / `ss315g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Shikues datasheet](docs/ss315g-datasheet.pdf) (3 pp, sha256 `e73e39ee53a285f9`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ss315g-datasheet.pdf)