component
SS315A
Public Made by Adomby adom
FUXINSEMI Schottky Barrier Diodes (SBD), SMA(DO-214AC). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSS315A
FUXINSEMI · Schottky Barrier Diodes (SBD) · SMA(DO-214AC)
SS315A from FUXINSEMI, in a SMA(DO-214AC). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode of the SS315A Schottky barrier rectifier, marked by the color band at the cathode end; the ratings table lists 150 V repetitive peak reverse voltage and 3.0 A average forward rectified current for this part. |
| 2 | Anode | passive | Anode of the SS315A Schottky barrier rectifier, where forward current enters the device; the part is rated for 3.0 A average forward rectified current and 80 A peak forward surge current (8.3 ms half sine-wave). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | FUXINSEMI |
| Package | SMA(DO-214AC) |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM | 150 | V | 1 | |||
| Maximum RMS voltage | VRMS | 105 | V | 1 | |||
| Maximum DC blocking voltage | VDC | 150 | V | 1 | |||
| Maximum average forward rectified current | I(AV) | 3 | A | at TL (see fig.1) | 1 | ||
| Peak forward surge current | IFSM | 80 | A | 8.3ms single half sine-wave superimposed on rated load | 1 | ||
| Maximum instantaneous forward voltage | VF | 0.95 | V | at 3.0A | 1 | ||
| Maximum DC reverse current | IR | 0.1 | mA | TA=25 C, at rated DC blocking voltage | 1 | ||
| Maximum DC reverse current | IR | 2 | mA | TA=100 C, at rated DC blocking voltage | 1 | ||
| Typical junction capacitance | CJ | 70 | pF | Measured at 1MHz and applied reverse voltage of 4.0V D.C. (NOTE 1) | 1 | ||
| Typical thermal resistance | RθJA | 70 | C/W | P.C.B. mounted with 2.0x2.0 in (5.0x5.0cm) copper pad areas (NOTE 2) | 1 | ||
| Operating junction temperature range | TJ | -55 | 150 | C | 1 | ||
| Storage temperature range | TSTG | -55 | 150 | C | 1 |
CAD (KiCad official)
- Symbol:
SS315A - Footprint:
Diode_SMD:D_SMA - 3D model: SMA(DO-214AC) (KiCad packages3D, STEP)
- 3D model files:
ss315a-etched.step/ss315a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ss315a.step/ss315a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: FUXINSEMI datasheet (4 pp, sha256
184e8982899a05d4, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).