component
SS2H10HE3_A
Public Made by Adomby adom
Vishay Intertech Schottky Diodes, DO-214AA. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
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SS2H10HE3_A
Vishay Intertech · Schottky Diodes · DO-214AA
SS2H10HE3_A from Vishay Intertech, in a DO-214AA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | DO-214AA |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM | 100 | V | 1 | |||
| Working peak reverse voltage | VRWM | 100 | V | 1 | |||
| Maximum DC blocking voltage | VDC | 100 | V | 1 | |||
| Maximum average forward rectified current | IF(AV) | 2 | A | TL = 130 °C | 1 | ||
| Peak forward surge current | IFSM | 75 | A | 8.3 ms single half sine-wave superimposed on rated load | 1 | ||
| Peak repetitive reverse surge current | IRRM | 1 | A | tp = 2.0 μs, 1 kHz | 1 | ||
| Voltage rate of change | dV/dt | 10000 | V/μs | rated VR | 1 | ||
| Operating junction and storage temperature range | TJ, TSTG | -65 | 175 | °C | 1 | ||
| Maximum instantaneous forward voltage | VF | 0.79 | V | IF = 2.0 A, TJ = 25 °C | 2 | ||
| Maximum instantaneous forward voltage | VF | 0.65 | V | IF = 2.0 A, TJ = 125 °C | 2 | ||
| Maximum reverse current at rated VR | IR | 10 | μA | at rated VR (2), TJ = 25 °C | 2 | ||
| Maximum reverse current at rated VR | IR | 4 | mA | at rated VR (2), TJ = 125 °C | 2 | ||
| Maximum thermal resistance junction-to-lead | RθJA | 80 | °C/W | TL = 25 °C (1) | 2 | ||
| Maximum thermal resistance junction-to-lead | RθJL | 25 | °C/W | TL = 25 °C (1) | 2 |
CAD (KiCad official)
- Symbol:
SS2H10HE3_A - Footprint:
Diode_SMD:D_SMB - 3D model: DO-214AA (KiCad packages3D, STEP)
- 3D model files:
ss2h10he3-a-etched.step/ss2h10he3-a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ss2h10he3-a.step/ss2h10he3-a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (5 pp, sha256
fbe62ee509fa8cc8, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SS2H10HE3_A
**Vishay Intertech** · Schottky Diodes · DO-214AA
SS2H10HE3_A from Vishay Intertech, in a DO-214AA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | DO-214AA |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM | | | 100 | V | | 1 |
| Working peak reverse voltage | VRWM | | | 100 | V | | 1 |
| Maximum DC blocking voltage | VDC | | | 100 | V | | 1 |
| Maximum average forward rectified current | IF(AV) | | | 2 | A | TL = 130 °C | 1 |
| Peak forward surge current | IFSM | | | 75 | A | 8.3 ms single half sine-wave superimposed on rated load | 1 |
| Peak repetitive reverse surge current | IRRM | | | 1 | A | tp = 2.0 μs, 1 kHz | 1 |
| Voltage rate of change | dV/dt | | | 10000 | V/μs | rated VR | 1 |
| Operating junction and storage temperature range | TJ, TSTG | -65 | | 175 | °C | | 1 |
| Maximum instantaneous forward voltage | VF | | | 0.79 | V | IF = 2.0 A, TJ = 25 °C | 2 |
| Maximum instantaneous forward voltage | VF | | | 0.65 | V | IF = 2.0 A, TJ = 125 °C | 2 |
| Maximum reverse current at rated VR | IR | | | 10 | μA | at rated VR (2), TJ = 25 °C | 2 |
| Maximum reverse current at rated VR | IR | | | 4 | mA | at rated VR (2), TJ = 125 °C | 2 |
| Maximum thermal resistance junction-to-lead | RθJA | | | 80 | °C/W | TL = 25 °C (1) | 2 |
| Maximum thermal resistance junction-to-lead | RθJL | | | 25 | °C/W | TL = 25 °C (1) | 2 |
## CAD (KiCad official)
- Symbol: `SS2H10HE3_A`
- Footprint: `Diode_SMD:D_SMB`
- 3D model: DO-214AA (KiCad packages3D, STEP)
- 3D model files: `ss2h10he3-a-etched.step` / `ss2h10he3-a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ss2h10he3-a.step` / `ss2h10he3-a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590397078397751296) (5 pp, sha256 `fbe62ee509fa8cc8`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ss2h10he3-a-datasheet.pdf)