component
SS25-E3
Public Made by Adomby adom
Vishay Intertech Schottky Barrier Diodes (SBD), DO-214AA(SMB). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownSS25-E3
Vishay Intertech · Schottky Barrier Diodes (SBD) · DO-214AA(SMB)
SS25-E3 from Vishay Intertech, in a DO-214AA(SMB). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode, marked by the color band on the package; the package drawing labels it as the cathode end of the single Schottky rectifier (SS25: VRRM 50 V, IF(AV) 2.0 A). |
| 2 | A | passive | Anode terminal of the single Schottky barrier rectifier, at the end opposite the cathode band (SS25: VRRM 50 V, IF(AV) 2.0 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | DO-214AA(SMB) |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum instantaneous forward voltage | VF | 0.7 | V | 2.0 A, TA = 25 °C, pulse test 300 μs, 1 % duty cycle | 2 | ||
| Maximum DC reverse current at rated DC blocking voltage | IR | 0.4 | mA | TA = 25 °C | 2 | ||
| Maximum DC reverse current at rated DC blocking voltage | IR | 10 | mA | TA = 100 °C | 2 | ||
| Maximum repetitive peak reverse voltage | VRRM | 50 | V | TA = 25 °C | 1 | ||
| Maximum RMS voltage | VRMS | 35 | V | TA = 25 °C | 1 | ||
| Maximum DC blocking voltage | VDC | 50 | V | TA = 25 °C | 1 | ||
| Max. average forward rectified current | IF(AV) | 2 | A | at TL (fig. 1) | 1 | ||
| Peak forward surge current | IFSM | 75 | A | 8.3 ms single half sine-wave superimposed on rated load | 1 | ||
| Non-repetitive avalanche energy | EAS | 20 | mJ | TA = 25 °C, IAS = 2.0 A, L = 10 mH | 1 | ||
| Electrostatic discharge capacitor voltage | VC | 8 | kV | Human body model: C = 100 pF, R = 1.5 kΩ | 1 | ||
| Voltage rate of change | dV/dt | 10000 | V/μs | rated VR | 1 | ||
| Operating junction temperature range | TJ | -65 | 150 | °C | 1 | ||
| Storage temperature range | TSTG | -65 | 150 | °C | 1 | ||
| Typical thermal resistance junction to ambient | RθJA | 75 | °C/W | PCB mounted with 0.55" x 0.55" (14 mm x 14 mm) copper pad areas | 2 | ||
| Typical thermal resistance junction to lead | RθJL | 17 | °C/W | PCB mounted with 0.55" x 0.55" (14 mm x 14 mm) copper pad areas | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 | 1 |
CAD (KiCad official)
- Symbol:
SS25-E3 - Footprint:
Diode_SMD:D_SMB - 3D model: DO-214AA(SMB) (KiCad packages3D, STEP)
- 3D model files:
ss25-e3-etched.step/ss25-e3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ss25-e3.step/ss25-e3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (5 pp, sha256
8b60bfd7a6574402, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).