component
SS1H10HE3_B
Public Made by Adomby adom
Vishay Intertech Schottky Barrier Diodes (SBD), DO-214AC. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownSS1H10HE3_B
Vishay Intertech · Schottky Barrier Diodes (SBD) · DO-214AC
SS1H10HE3_B from Vishay Intertech, in a DO-214AC. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode terminal, marked by the color band on the SMA (DO-214AC) package; positive terminal when forward-biased current flows from anode, with VRRM 100 V for SS1H10. |
| 2 | Anode | passive | Anode terminal of the single Schottky rectifier, opposite the cathode band end, with IF(AV) of 1.0 A and IFSM of 50 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | DO-214AC |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum instantaneous forward voltage | VF | 0.77 | V | IF = 1.0 A, TJ = 25 °C | 2 | ||
| Maximum instantaneous forward voltage | VF | 0.62 | V | IF = 1.0 A, TJ = 125 °C | 2 | ||
| Maximum instantaneous forward voltage | VF | 0.86 | V | IF = 2.0 A, TJ = 25 °C | 2 | ||
| Maximum instantaneous forward voltage | VF | 0.7 | V | IF = 2.0 A, TJ = 125 °C | 2 | ||
| Maximum reverse current at rated VR | IR | 1 | μA | TJ = 25 °C | 2 | ||
| Maximum reverse current at rated VR | IR | 0.5 | mA | TJ = 125 °C | 2 | ||
| Maximum repetitive peak reverse voltage | VRRM | 100 | V | TA = 25 °C | 1 | ||
| Working peak reverse voltage | VRWM | 100 | V | TA = 25 °C | 1 | ||
| Maximum DC blocking voltage | VDC | 100 | V | TA = 25 °C | 1 | ||
| Maximum average forward rectified current | IF(AV) | 1 | A | TA = 25 °C (fig. 1) | 1 | ||
| Peak forward surge current | IFSM | 50 | A | 8.3 ms single half sine-wave superimposed on rated load | 1 | ||
| Peak repetitive reverse surge current | IRRM | 1 | A | tp = 2.0 μs, 1 kHz | 1 | ||
| Storage temperature range | TSTG | -65 | 175 | °C | 1 | ||
| Maximum operating temperature | TJ | 175 | °C | 1 | |||
| Maximum thermal resistance junction to ambient | RθJA | 88 | °C/W | PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas | 2 | ||
| Maximum thermal resistance junction to lead | RθJL | 30 | °C/W | PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 | 1 |
CAD (KiCad official)
- Symbol:
SS1H10HE3_B - Footprint:
Diode_SMD:D_SMA - 3D model: DO-214AC (KiCad packages3D, STEP)
- 3D model files:
ss1h10he3-b-etched.step/ss1h10he3-b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ss1h10he3-b.step/ss1h10he3-b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (6 pp, sha256
fa5f4bbe040c2692, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).