component
SS1060B
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MSKSEMI Schottky Barrier Diodes (SBD), SMB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SS1060B
MSKSEMI · Schottky Barrier Diodes (SBD) · SMB
SS1060B from MSKSEMI, in a SMB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode terminal; the datasheet states that the color band marks the cathode end of the package. |
| 2 | Anode | passive | Anode terminal of the rectifier diode, with the SS1060B rated at 60 V maximum recurrent peak reverse voltage and 10.0 A maximum average forward rectified current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SMB |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Recurrent Peak Reverse Voltage | VRRM | 60 | V | 2 | |||
| Maximum RMS Voltage | VRMS | 42 | V | 2 | |||
| Maximum DC Blocking Voltage | VDC | 60 | V | 2 | |||
| Maximum Average Forward Rectified Current | IF(AV) | 10 | A | See Fig. 1 | 2 | ||
| Peak Forward Surge Current | IFSM | 175 | A | 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) | 2 | ||
| Maximum Instantaneous Forward Voltage | VF | 0.7 | V | at 10.0A | 2 | ||
| Maximum DC Reverse Current | IR | 0.5 | mA | at rated DC blocking voltage, Ta=25℃ | 2 | ||
| Maximum DC Reverse Current | IR | 50 | mA | at rated DC blocking voltage, Ta=100℃ | 2 | ||
| Typical Junction Capacitance | CJ | 400 | pF | Note 1: measured at 1MHz and applied reverse voltage of 4.0V D.C. | 2 | ||
| Typical Thermal Resistance | RθJA | 16 | ℃/W | Note 2: thermal resistance junction to lead | 2 | ||
| Operating Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 |
CAD (KiCad official)
- Symbol:
SS1060B - Footprint:
Diode_SMD:D_SMB - 3D model: SMB (KiCad packages3D, STEP)
- 3D model files:
ss1060b-etched.step/ss1060b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ss1060b.step/ss1060b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (5 pp, sha256
b43ae5679f37d8c2, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SS1060B
**MSKSEMI** · Schottky Barrier Diodes (SBD) · SMB
SS1060B from MSKSEMI, in a SMB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode terminal; the datasheet states that the color band marks the cathode end of the package. |
| 2 | Anode | passive | Anode terminal of the rectifier diode, with the SS1060B rated at 60 V maximum recurrent peak reverse voltage and 10.0 A maximum average forward rectified current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SMB |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Recurrent Peak Reverse Voltage | VRRM | | | 60 | V | | 2 |
| Maximum RMS Voltage | VRMS | | | 42 | V | | 2 |
| Maximum DC Blocking Voltage | VDC | | | 60 | V | | 2 |
| Maximum Average Forward Rectified Current | IF(AV) | | | 10 | A | See Fig. 1 | 2 |
| Peak Forward Surge Current | IFSM | | | 175 | A | 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) | 2 |
| Maximum Instantaneous Forward Voltage | VF | | | 0.7 | V | at 10.0A | 2 |
| Maximum DC Reverse Current | IR | | | 0.5 | mA | at rated DC blocking voltage, Ta=25℃ | 2 |
| Maximum DC Reverse Current | IR | | | 50 | mA | at rated DC blocking voltage, Ta=100℃ | 2 |
| Typical Junction Capacitance | CJ | | 400 | | pF | Note 1: measured at 1MHz and applied reverse voltage of 4.0V D.C. | 2 |
| Typical Thermal Resistance | RθJA | | 16 | | ℃/W | Note 2: thermal resistance junction to lead | 2 |
| Operating Temperature Range | TJ | -55 | | 150 | ℃ | | 2 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 2 |
## CAD (KiCad official)
- Symbol: `SS1060B`
- Footprint: `Diode_SMD:D_SMB`
- 3D model: SMB (KiCad packages3D, STEP)
- 3D model files: `ss1060b-etched.step` / `ss1060b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ss1060b.step` / `ss1060b.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MSKSEMI datasheet](docs/ss1060b-datasheet.pdf) (5 pp, sha256 `b43ae5679f37d8c2`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ss1060b-datasheet.pdf)