component
SRV05-4HTG-D-HXY
Public Made by Adomby adom
HXY MOSFET ESD And Surge Protection (TVS/ESD), SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSRV05-4HTG-D-HXY
HXY MOSFET · ESD And Surge Protection (TVS/ESD) · SOT-23-6L
SRV05-4HTG-D-HXY from HXY MOSFET, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | I/O1 | passive | Protected I/O line with steering diodes to VDD and GND, 1.5 pF max (I/O to GND) capacitance, 4 A surge (IEC61000-4-5) on I/O to GND. |
| 2 | GND | power_in | Ground reference; anode of the central TVS diode and return for the steering diodes, 5 V reverse working voltage VDD-GND. |
| 3 | I/O2 | passive | Protected I/O line with steering diodes to VDD and GND, 1.5 pF max (I/O to GND) capacitance, 4 A surge (IEC61000-4-5) on I/O to GND. |
| 4 | I/O3 | passive | Protected I/O line with steering diodes to VDD and GND, 1.5 pF max (I/O to GND) capacitance, 4 A surge (IEC61000-4-5) on I/O to GND. |
| 5 | VDD | power_in | Positive rail connected to the cathode of the central TVS diode, 5 V reverse working voltage and 17 A surge (IEC61000-4-5) VDD to GND. |
| 6 | I/O4 | passive | Protected I/O line with steering diodes to VDD and GND, 1.5 pF max (I/O to GND) capacitance, 4 A surge (IEC61000-4-5) on I/O to GND. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23-6L |
| Category | Circuit Protection |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Breakdown Voltage | VBR | 6 | V | IT=1mA | 2 | ||
| Leakage Current | ILeak | 1 | uA | VRWM=5V | 2 | ||
| Junction Capacitance (I/O to GND) | CJ | 1.5 | pF | VR=0V, f=1MHz | 2 | ||
| Junction Capacitance (I/O to I/O) | CJ | 0.75 | pF | VR=0V, f=1MHz | 2 | ||
| Reverse Working Voltage | VRWM | 5 | V | 2 | |||
| Peak Pulse Power | Ppk | 200 | W | 8/20μs (VDD-GND) | 2 | ||
| ESD per IEC61000-4-2 (Air) | VESD | -20 | 20 | kV | 2 | ||
| ESD per IEC61000-4-2 (Contact) | VESD | -20 | 20 | kV | 2 | ||
| Operating Temperature Range | TJ | -55 | 125 | °C | 2 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Clamping Voltage (I/O-GND) | VC | 9 | V | IPP=1A,Tp=8/20μs | 2 | ||
| Clamping Voltage (VDD-GND) | VC | 16 | V | PP=5.5A,Tp=8/20μs | 2 |
CAD (KiCad official)
- Symbol:
SRV05-4HTG-D-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
srv05-4htg-d-hxy-etched.step/srv05-4htg-d-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);srv05-4htg-d-hxy.step/srv05-4htg-d-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
a8160a93534d5803, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).