component
SQM120N10-3M8_GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SQM120N10-3M8_GE3
Vishay Intertech · MOSFETs · TO-263
SQM120N10-3M8_GE3 from Vishay Intertech, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is limited to ±20 V per the absolute maximum ratings. |
| 2 | D | passive | Drain terminal, also the heat-sink tab (junction-to-case thermal resistance RthJC 0.4 °C/W); drain-source voltage is rated 100 V and continuous drain current 120 A at TC = 25 °C. |
| 3 | S | passive | Source terminal; continuous source (diode conduction) current is rated 120 A and pulsed source current 480 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 120 | A | TC = 25 °C | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | 120 | A | 1 | |||
| Pulsed Drain Current | IDM | 480 | A | 1 | |||
| Single Pulse Avalanche Current | IAS | 73 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 266 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 375 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 125 | W | TC = 125 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient (PCB Mount) | RthJA | 40 | °C/W | PCB mount, 1" square PCB (FR-4 material) | 1 | ||
| Junction-to-Case (Drain) | RthJC | 0.4 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | VDS | 100 | V | VGS = 0, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2.5 | 3 | 3.5 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS = 0 V, VDS = 100 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | μA | VGS = 0 V, VDS = 100 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 500 | μA | VGS = 0 V, VDS = 100 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | 120 | A | VGS = 10 V, VDS 5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.003 | 0.0038 | Ω | VGS = 10 V, ID = 20 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.0064 | Ω | VGS = 10 V, ID = 20 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.008 | Ω | VGS = 10 V, ID = 20 A, TJ = 175 °C | 2 | ||
| Input Capacitance | Ciss | 5780 | 7230 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | |
| Output Capacitance | Coss | 3070 | 3840 | pF | 2 | ||
| Reverse Transfer Capacitance | Crss | 305 | 385 | pF | 2 | ||
| Total Gate Charge | Qg | 125 | 190 | nC | VGS = 10 V, VDS = 50 V, ID = 70 A | 2 | |
| Gate Resistance | Rg | 1.6 | 3.3 | 5 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 16 | 25 | ns | VDD = 50 V, RL = 0.7, ID 70 A, VGEN = 10 V, Rg = 1 | 2 | |
| Rise Time | tr | 110 | 165 | ns | 2 | ||
| Turn-Off Delay Time | td(off) | 40 | 60 | ns | 2 | ||
| Fall Time | tf | 12 | 20 | ns | 2 | ||
| Pulsed Current | ISM | 480 | A | 2 | |||
| Forward Voltage | VSD | 0.9 | 1.5 | V | IF = 100 A, VGS = 0 | 2 |
CAD (KiCad official)
- Symbol:
SQM120N10-3M8_GE3 - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
sqm120n10-3m8-ge3-etched.step/sqm120n10-3m8-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sqm120n10-3m8-ge3.step/sqm120n10-3m8-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
5a1c740db6fb21e0, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SQM120N10-3M8_GE3
**Vishay Intertech** · MOSFETs · TO-263
SQM120N10-3M8_GE3 from Vishay Intertech, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is limited to ±20 V per the absolute maximum ratings. |
| 2 | D | passive | Drain terminal, also the heat-sink tab (junction-to-case thermal resistance RthJC 0.4 °C/W); drain-source voltage is rated 100 V and continuous drain current 120 A at TC = 25 °C. |
| 3 | S | passive | Source terminal; continuous source (diode conduction) current is rated 120 A and pulsed source current 480 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 100 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 120 | A | TC = 25 °C | 1 |
| Continuous Source Current (Diode Conduction) | IS | | | 120 | A | | 1 |
| Pulsed Drain Current | IDM | | | 480 | A | | 1 |
| Single Pulse Avalanche Current | IAS | | | 73 | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Energy | EAS | | | 266 | mJ | | 1 |
| Maximum Power Dissipation | PD | | | 375 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 125 | W | TC = 125 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Junction-to-Ambient (PCB Mount) | RthJA | | | 40 | °C/W | PCB mount, 1" square PCB (FR-4 material) | 1 |
| Junction-to-Case (Drain) | RthJC | | | 0.4 | °C/W | | 1 |
| Drain-Source Breakdown Voltage | VDS | 100 | | | V | VGS = 0, ID = 250 μA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 2.5 | 3 | 3.5 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VGS = 0 V, VDS = 100 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 50 | μA | VGS = 0 V, VDS = 100 V, TJ = 125 °C | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 500 | μA | VGS = 0 V, VDS = 100 V, TJ = 175 °C | 2 |
| On-State Drain Current | ID(on) | 120 | | | A | VGS = 10 V, VDS 5 V | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.003 | 0.0038 | Ω | VGS = 10 V, ID = 20 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.0064 | Ω | VGS = 10 V, ID = 20 A, TJ = 125 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.008 | Ω | VGS = 10 V, ID = 20 A, TJ = 175 °C | 2 |
| Input Capacitance | Ciss | | 5780 | 7230 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 |
| Output Capacitance | Coss | | 3070 | 3840 | pF | | 2 |
| Reverse Transfer Capacitance | Crss | | 305 | 385 | pF | | 2 |
| Total Gate Charge | Qg | | 125 | 190 | nC | VGS = 10 V, VDS = 50 V, ID = 70 A | 2 |
| Gate Resistance | Rg | 1.6 | 3.3 | 5 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | | 16 | 25 | ns | VDD = 50 V, RL = 0.7, ID 70 A, VGEN = 10 V, Rg = 1 | 2 |
| Rise Time | tr | | 110 | 165 | ns | | 2 |
| Turn-Off Delay Time | td(off) | | 40 | 60 | ns | | 2 |
| Fall Time | tf | | 12 | 20 | ns | | 2 |
| Pulsed Current | ISM | | | 480 | A | | 2 |
| Forward Voltage | VSD | | 0.9 | 1.5 | V | IF = 100 A, VGS = 0 | 2 |
## CAD (KiCad official)
- Symbol: `SQM120N10-3M8_GE3`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `sqm120n10-3m8-ge3-etched.step` / `sqm120n10-3m8-ge3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sqm120n10-3m8-ge3.step` / `sqm120n10-3m8-ge3.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588886068997599232) (9 pp, sha256 `5a1c740db6fb21e0`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sqm120n10-3m8-ge3-datasheet.pdf)