component

SQD90P04-9M4L-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorsqd90p04-9m4l-vbfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 12d ago
viewers sqd90p04-9m4l-vb: viewers · Ray 12d ago
package.json Publish 0.1.0 · Ray 12d ago
page.json Set visibility: public · Ray 12d ago
README.md Publish 0.1.0 · Ray 12d ago
sqd90p04-9m4l-vb-etched.glb Publish 0.1.0 · Ray 12d ago
sqd90p04-9m4l-vb-etched.step sqd90p04-9m4l-vb: factory component page (tier=lcsc) · Ray 12d ago
sqd90p04-9m4l-vb-hero.glb sqd90p04-9m4l-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 12d ago
sqd90p04-9m4l-vb-hero.overlay.json Publish 0.1.0 · Ray 12d ago
sqd90p04-9m4l-vb.glb Publish 0.1.0 · Ray 12d ago
sqd90p04-9m4l-vb.kicad_mod Publish 0.1.0 · Ray 12d ago
sqd90p04-9m4l-vb.kicad_sym Publish 0.1.0 · Ray 12d ago
sqd90p04-9m4l-vb.lbr Publish 0.1.0 · Ray 12d ago
sqd90p04-9m4l-vb.step Publish 0.1.0 · Ray 12d ago

SQD90P04-9M4L-VB

VBsemi Elec · MOSFETs · TO-252

SQD90P04-9M4L-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, with a maximum gate-source voltage of ±20 V.
2 D passive Drain, connected internally to the tab, with VDS of -40 V and continuous drain current of -90 A (package limited).
3 S passive Source of the P-channel MOSFET, with continuous diode source current of -100 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS -40 V VGS = 0 V, ID = - 250 μA 2
Gate-Source Threshold Voltage VGS(th) -1.5 -2.5 V VDS = VGS, ID = - 250 μA 2
Gate-Source Leakage IGSS 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 μA VGS = 0 V, VDS = - 40 V 2
Zero Gate Voltage Drain Current (125 °C) IDSS -50 μA VGS = 0 V, VDS = - 40 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current (175 °C) IDSS -150 μA VGS = 0 V, VDS = - 40 V, TJ = 175 °C 2
On-State Drain Current ID(on) -50 A VGS = - 10 V, VDS ≤ - 5 V 2
Drain-Source On-State Resistance (125 °C) RDS(on) 0.0147 Ω VGS = - 10 V, ID = - 50 A, TJ = 125 °C 2
Drain-Source On-State Resistance (175 °C) RDS(on) 0.0178 Ω VGS = - 10 V, ID = - 50 A, TJ = 175 °C 2
Output Capacitance Coss 852 1065 pF VGS = 0 V, VDS = - 20 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 681 855 pF VGS = 0 V, VDS = - 20 V, f = 1 MHz 2
Total Gate Charge Qg 103 155 nC VGS = - 10 V, VDS = - 20 V, ID = - 50 A 2
Gate Resistance Rg 1.4 2.8 4.2 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 13 20 ns VDD = - 20 V, RL = 0.4 Ω, ID ≅ - 50 A, VGEN = - 10 V, Rg = 1 Ω 2
Rise Time tr 15 23 ns VDD = - 20 V, RL = 0.4 Ω, ID ≅ - 50 A, VGEN = - 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 61 92 ns VDD = - 20 V, RL = 0.4 Ω, ID ≅ - 50 A, VGEN = - 10 V, Rg = 1 Ω 2
Fall Time tf 19 29 ns VDD = - 20 V, RL = 0.4 Ω, ID ≅ - 50 A, VGEN = - 10 V, Rg = 1 Ω 2
Pulsed Source Current ISM -160 A 2
Forward Voltage VSD -0.95 -1.5 V IF = - 50 A, VGS = 0 V 2
Drain-Source On-State Resistance RDS(on) 0.0068 Ω VGS = - 10 V, ID = - 17 A 2
Drain-Source On-State Resistance RDS(on) 0.013 Ω VGS = - 4.5 V, ID = - 14 A 2
Forward Transconductance gfs 46 S VDS = - 15 V, ID = - 17 A 2
Gate-Source Charge Qgs 15 nC VGS = - 10 V, VDS = - 20 V, ID = - 50 A 2
Gate-Drain Charge Qgd 21 nC VGS = - 10 V, VDS = - 20 V, ID = - 50 A 2
Drain-Source Voltage VDS -40 V TC = 25 °C 1
Gate-Source Voltage VGS -20 20 V TC = 25 °C 1
Continuous Drain Current ID -90 A TC = 25 °C 1
Continuous Drain Current ID -52 A TC = 125 °C 1
Continuous Source Current (Diode Conduction) IS -100 A TC = 25 °C 1
Pulsed Drain Current IDM -280 A TC = 25 °C 1
Single Pulse Avalanche Current IAS -50 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 125 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 136 W TC = 25 °C 1
Maximum Power Dissipation PD 45 W TC = 125 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient Thermal Resistance RthJA 50 °C/W PCB Mount, 1" square PCB (FR-4) 1
Junction-to-Case (Drain) Thermal Resistance RthJC 1.1 °C/W 1

CAD (KiCad official)

  • Symbol: SQD90P04-9M4L-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: sqd90p04-9m4l-vb-etched.step / sqd90p04-9m4l-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sqd90p04-9m4l-vb.step / sqd90p04-9m4l-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 2dc754a872102112, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF