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SQD70140EL_GE3

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Vishay Intertech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorssqd70140el_ge3factory-2.0.0extractor-text

Verified SQD70140EL_GE3

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: SQD70140EL_GE3 · TO-252 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 9-page datasheet
  • ✓distributor: lcsc C5346017, digikey SQD70140EL_GE3TR-ND, mouser 78-SQD70140EL_GE3
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-qi0i26gl/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ sqd70140el-ge3.kicad_sym✓ sqd70140el-ge3.kicad_mod✓ sqd70140el-ge3.step
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Ray Publish 0.1.0 d9217fb 5d ago

SQD70140EL_GE3

Vishay Intertech · MOSFETs · TO-252

SQD70140EL_GE3 from Vishay Intertech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is rated ±20 V (VGS) and gate-source threshold is 1.5 V minimum to 2.5 V maximum at VDS = VGS, ID = 250 µA.
2 D passive Drain terminal, internally connected to the tab; drain-source voltage is 100 V and continuous drain current is 30 A at TC = 25 °C.
3 S passive Source terminal; continuous source current (diode conduction) is 30 A and pulsed drain current is 120 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 30 A TC = 25 °C 1
Continuous Drain Current ID 27 A TC = 125 °C 1
Continuous Source Current (Diode Conduction) IS 30 A 1
Pulsed Drain Current IDM 120 A 1
Single Pulse Avalanche Current IAS 34 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 58 mJ 1
Maximum Power Dissipation PD 71 W TC = 25 °C 1
Maximum Power Dissipation PD 23 W TC = 125 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient PCB Mount RthJA 50 °C/W PCB Mount 1
Junction-to-Case (Drain) RthJC 2.1 °C/W 1
Drain-Source Breakdown Voltage VDS 100 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 1.5 2.5 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS = 0 V VDS = 100 V 2
Zero Gate Voltage Drain Current IDSS 50 μA VGS = 0 V VDS = 100 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 μA VGS = 0 V VDS = 100 V, TJ = 175 °C 2
On-State Drain Current ID(on) 30 A VGS = 10 V VDS 5 V 2
Drain-Source On-State Resistance RDS(on) 0.012 0.015 Ω VGS = 10 V ID = 30 A 2
Drain-Source On-State Resistance RDS(on) 0.0255 Ω VGS = 10 V ID = 30 A, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.032 Ω VGS = 10 V ID = 30 A, TJ = 175 °C 2
Drain-Source On-State Resistance RDS(on) 0.0145 0.019 Ω VGS = 4.5 V ID = 20 A 2
Input Capacitance Ciss 1565 2100 pF VGS = 0 V VDS = 25 V, f = 1 MHz 2
Output Capacitance Coss 800 1100 pF VGS = 0 V VDS = 25 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 65 100 pF VGS = 0 V VDS = 25 V, f = 1 MHz 2
Total Gate Charge Qg 26.5 40 nC VGS = 10 V VDS = 50 V, ID = 30 A 2
Gate Resistance Rg 1.1 2.3 3.5 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 7 15 ns VDD = 50 V, RL = 1.67 Ω, ID 30 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 19 30 ns VDD = 50 V, RL = 1.67 Ω, ID 30 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 18 30 ns VDD = 50 V, RL = 1.67 Ω, ID 30 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 59 95 ns VDD = 50 V, RL = 1.67 Ω, ID 30 A, VGEN = 10 V, Rg = 1 Ω 2
Pulsed Current ISM 120 A 2
Forward Voltage VSD 0.94 1.5 V IF = 30 A, VGS = 0 V 2
Forward Transconductance gfs 58 S VDS = 15 V, ID = 25 A 2
Gate-Source Charge Qgs 5.5 nC VGS = 10 V VDS = 50 V, ID = 30 A 2
Gate-Drain Charge Qgd 5.5 nC VGS = 10 V VDS = 50 V, ID = 30 A 2

CAD (KiCad official)

  • Symbol: SQD70140EL_GE3
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: sqd70140el-ge3-etched.step / sqd70140el-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sqd70140el-ge3.step / sqd70140el-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 515ccb52d6beb1fc, retrieved 2026-11-02, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF