component
SQD50P04-13L_GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 9d ago |
| viewers | 9d ago |
| package.json | 9d ago |
| page.json | 9d ago |
| README.md | 9d ago |
| sqd50p04-13l-ge3-etched.glb | 9d ago |
| sqd50p04-13l-ge3-etched.step | 9d ago |
| sqd50p04-13l-ge3-hero.glb | 9d ago |
| sqd50p04-13l-ge3-hero.overlay.json | 9d ago |
| sqd50p04-13l-ge3.glb | 9d ago |
| sqd50p04-13l-ge3.kicad_mod | 9d ago |
| sqd50p04-13l-ge3.kicad_sym | 9d ago |
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| sqd50p04-13l-ge3.step | 9d ago |
SQD50P04-13L_GE3
Vishay Intertech · MOSFETs · TO-252
SQD50P04-13L_GE3 from Vishay Intertech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with a maximum gate-source voltage of ±20 V and a threshold of -1.5 to -2.5 V. |
| 2 | D | passive | Drain, connected to the tab, rated for VDS of -40 V and continuous ID of -50 A (package limited) at TC = 25 °C. |
| 3 | S | passive | Source of the P-channel MOSFET, with continuous diode-conduction source current IS of -50 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 | V | TC = 25 °C, unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25 °C, unless otherwise noted | 1 | |
| Continuous Drain Current, TC = 25 °C | ID | -50 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current, TC = 125 °C | ID | -39 | A | TC = 125 °C | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | -50 | A | 1 | |||
| Pulsed Drain Current | IDM | -200 | A | 1 | |||
| Single Pulse Avalanche Current | IAS | -40 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 80 | mJ | 1 | |||
| Maximum Power Dissipation, TA = 25 °C | PD | 3 | W | TA = 25 °C | 1 | ||
| Maximum Power Dissipation, TC = 25 °C | PD | 136 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation, TC = 125 °C | PD | 45 | W | TC = 125 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance (PCB Mount) | RthJA | 50 | °C/W | PCB mount | 1 | ||
| Junction-to-Case (Drain) Thermal Resistance | RthJC | 1.1 | °C/W | Junction-to-Case (Drain) | 1 | ||
| Drain-Source Breakdown Voltage | VDS | -40 | V | VGS = 0 V, ID = -250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -1.5 | -2.5 | V | VDS = VGS, ID = -250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VGS = 0 V, VDS = -40 V | 2 | ||
| Zero Gate Voltage Drain Current, TJ = 125 °C | IDSS | -50 | μA | VGS = 0 V, VDS = -40 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current, TJ = 175 °C | IDSS | -150 | μA | VGS = 0 V, VDS = -40 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | -50 | A | VGS = -10 V, VDS ≤ -5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.01 | 0.013 | Ω | VGS = -10 V, ID = -17 A | 2 | |
| Drain-Source On-State Resistance, TJ = 125 °C | RDS(on) | 0.017 | Ω | VGS = -10 V, ID = -50 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance, TJ = 175 °C | RDS(on) | 0.02 | Ω | VGS = -10 V, ID = -50 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance, VGS = -4.5 V | RDS(on) | 0.016 | 0.022 | Ω | VGS = -4.5 V, ID = -14 A | 2 | |
| Input Capacitance | Ciss | 2872 | 3950 | pF | VGS = 0 V, VDS = -25 V, f = 1 MHz | 2 | |
| Output Capacitance | Coss | 508 | 635 | pF | VGS = 0 V, VDS = -25 V, f = 1 MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 352 | 440 | pF | VGS = 0 V, VDS = -25 V, f = 1 MHz | 2 | |
| Total Gate Charge | Qg | 60 | 80 | nC | VGS = -10 V, VDS = -30 V, ID = -50 A | 2 | |
| Gate-Source Charge | Qgs | 5.7 | 8.6 | nC | 2 | ||
| Gate-Drain Charge | Qgd | 14.7 | 22 | nC | 2 | ||
| Gate Resistance | Rg | 1.5 | 3 | 4.5 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 10 | 15 | ns | VDD = -20 V, RL = 0.4 Ω, ID ≅ -50 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 12 | 18 | ns | VDD = -20 V, RL = 0.4 Ω, ID ≅ -50 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 40 | 60 | ns | VDD = -20 V, RL = 0.4 Ω, ID ≅ -50 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 16 | 24 | ns | VDD = -20 V, RL = 0.4 Ω, ID ≅ -50 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Pulsed Current (Source-Drain Diode) | ISM | -200 | A | 2 | |||
| Forward Voltage | VSD | -1 | -1.5 | V | IF = -50 A, VGS = 0 V | 2 |
CAD (KiCad official)
- Symbol:
SQD50P04-13L_GE3 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
sqd50p04-13l-ge3-etched.step/sqd50p04-13l-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sqd50p04-13l-ge3.step/sqd50p04-13l-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (10 pp, sha256
9ec2de7a1f93fb70, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).