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SQD40P10-40L_GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSQD40P10-40L_GE3
Vishay Intertech · MOSFETs · TO-252
SQD40P10-40L_GE3 from Vishay Intertech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage is rated at ±20 V (VGS limit on page 1). |
| 2 | D | passive | Drain of the P-channel MOSFET, electrically connected to the tab; drain-source voltage is rated at -100 V and continuous drain current at -38 A at TC = 25 °C. |
| 3 | S | passive | Source of the P-channel MOSFET; continuous source (diode conduction) current is rated at -50 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | -100 | V | VGS = 0 V, ID = -250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -1 | -2 | -2.5 | V | VDS = VGS, ID = -250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current (25 °C) | IDSS | -1 | μA | VGS = 0 V, VDS = -100 V | 2 | ||
| Zero Gate Voltage Drain Current (TJ = 125 °C) | IDSS | -50 | μA | VGS = 0 V, VDS = -100 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current (TJ = 175 °C) | IDSS | -250 | μA | VGS = 0 V, VDS = -100 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | -30 | A | VGS = -10 V, VDS -5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.033 | 0.04 | Ω | VGS = -10 V, ID = -9.2 A | 2 | |
| Drain-Source On-State Resistance (TJ = 125 °C) | RDS(on) | 0.074 | Ω | VGS = -10 V, ID = -9.2 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance (TJ = 175 °C) | RDS(on) | 0.093 | Ω | VGS = -10 V, ID = -9.2 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance (VGS = -4.5 V) | RDS(on) | 0.037 | 0.048 | Ω | VGS = -4.5 V, ID = -7.7 A | 2 | |
| Input Capacitance | Ciss | 4433 | 5545 | pF | VGS = 0 V, VDS = -25 V, f = 1 MHz | 2 | |
| Output Capacitance | Coss | 301 | 380 | pF | VGS = 0 V, VDS = -25 V, f = 1 MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 208 | 260 | pF | VGS = 0 V, VDS = -25 V, f = 1 MHz | 2 | |
| Total Gate Charge | Qg | 96 | 144 | nC | VGS = -10 V, VDS = -50 V, ID = -9.2 A | 2 | |
| Gate Resistance | Rg | 1.5 | 3.13 | 4.7 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 11 | 17 | ns | VDD = -50 V, RL = 6.49 Ω, ID = -7.7 A, VGEN = -10 V, Rg = 1.0 Ω | 2 | |
| Rise Time | tr | 11 | 17 | ns | VDD = -50 V, RL = 6.49 Ω, ID = -7.7 A, VGEN = -10 V, Rg = 1.0 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 78 | 117 | ns | VDD = -50 V, RL = 6.49 Ω, ID = -7.7 A, VGEN = -10 V, Rg = 1.0 Ω | 2 | |
| Fall Time | tf | 15 | 23 | ns | VDD = -50 V, RL = 6.49 Ω, ID = -7.7 A, VGEN = -10 V, Rg = 1.0 Ω | 2 | |
| Pulsed Current (source-drain diode) | ISM | -150 | A | 2 | |||
| Forward Voltage | VSD | 0.8 | 1.5 | V | IF = -7.7 A, VGS = 0 V | 2 | |
| Drain-Source Voltage | VDS | -100 | V | Absolute maximum rating, TC = 25 °C unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | Absolute maximum rating | 1 | |
| Continuous Drain Current (TC = 25 °C) | ID | -38 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current (TC = 125 °C) | ID | -22 | A | TC = 125 °C | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | -50 | A | 1 | |||
| Pulsed Drain Current | IDM | -150 | A | 1 | |||
| Single Pulse Avalanche Current | IAS | -44 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 96 | mJ | 1 | |||
| Maximum Power Dissipation (TC = 25 °C) | PD | 136 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation (TC = 125 °C) | PD | 45 | W | TC = 125 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 50 | °C/W | PCB mount (note c: 1" square PCB, FR-4) | 1 | ||
| Junction-to-Case (Drain) Thermal Resistance | RthJC | 1.1 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
SQD40P10-40L_GE3 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
sqd40p10-40l-ge3-etched.step/sqd40p10-40l-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sqd40p10-40l-ge3.step/sqd40p10-40l-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (10 pp, sha256
5710434b19e832cd, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).