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SQD40031EL_GE3-VB
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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SQD40031EL_GE3-VB
VBsemi Elec · MOSFETs · TO-252
SQD40031EL_GE3-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage is limited to ±20 V (absolute maximum rating). |
| 2 | S | passive | Source of the P-channel MOSFET; the datasheet gives the source-drain diode ratings with continuous current IS of -80 A and pulsed current ISM of -240 A. |
| 3 | D | passive | Drain of the P-channel MOSFET; the datasheet rates the drain-source voltage at -30 V and continuous drain current at -90 A (TJ = 175 °C, package limited). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -90 | A | TC = 125 °C | 1 | ||
| Pulsed Drain Current | IDM | -280 | A | 1 | |||
| Avalanche Current | IAR | -80 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 180 | mJ | L = 0.1 mH | 1 | ||
| Power Dissipation | PD | 187 | W | TC = 25 °C (TO-220AB and TO-263) | 1 | ||
| Power Dissipation | PD | 3.75 | W | TA = 25 °C (TO-263) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 40 | °C/W | PCB Mount (TO-263) | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 62.5 | °C/W | Free Air (TO-220AB) | 1 | ||
| Junction-to-Case Thermal Resistance | RthJC | 0.8 | °C/W | Junction-to-Case | 1 | ||
| Drain-Source Breakdown Voltage | VDS | -30 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -50 | µA | VDS = -30 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -250 | µA | VDS = -30 V, VGS = 0 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | -120 | A | VDS = -5 V, VGS = -10 V | 2 | ||
| Forward Voltage | VSD | -1.2 | -1.5 | V | IF = -75 A, VGS = 0 V | 2 | |
| Reverse Recovery Time | trr | 55 | 100 | ns | IF = -75 A, dI/dt = 100 A/µs | 2 | |
| Reverse Recovery Charge | Qrr | 0.07 | 0.25 | µC | IF = -75 A, dI/dt = 100 A/µs | 2 | |
| Peak Reverse Recovery Current | IRM(REC) | 2.5 | 5 | A | IF = -75 A, dI/dt = 100 A/µs | 2 |
CAD (KiCad official)
- Symbol:
SQD40031EL_GE3-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
sqd40031el-ge3-vb-etched.step/sqd40031el-ge3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sqd40031el-ge3-vb.step/sqd40031el-ge3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
2ab732be9a2297a9, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SQD40031EL_GE3-VB
**VBsemi Elec** · MOSFETs · TO-252
SQD40031EL_GE3-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage is limited to ±20 V (absolute maximum rating). |
| 2 | S | passive | Source of the P-channel MOSFET; the datasheet gives the source-drain diode ratings with continuous current IS of -80 A and pulsed current ISM of -240 A. |
| 3 | D | passive | Drain of the P-channel MOSFET; the datasheet rates the drain-source voltage at -30 V and continuous drain current at -90 A (TJ = 175 °C, package limited). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | -90 | | | A | TC = 125 °C | 1 |
| Pulsed Drain Current | IDM | -280 | | | A | | 1 |
| Avalanche Current | IAR | -80 | | | A | | 1 |
| Repetitive Avalanche Energy | EAR | | | 180 | mJ | L = 0.1 mH | 1 |
| Power Dissipation | PD | | | 187 | W | TC = 25 °C (TO-220AB and TO-263) | 1 |
| Power Dissipation | PD | | | 3.75 | W | TA = 25 °C (TO-263) | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Junction-to-Ambient Thermal Resistance | RthJA | | | 40 | °C/W | PCB Mount (TO-263) | 1 |
| Junction-to-Ambient Thermal Resistance | RthJA | | | 62.5 | °C/W | Free Air (TO-220AB) | 1 |
| Junction-to-Case Thermal Resistance | RthJC | | | 0.8 | °C/W | Junction-to-Case | 1 |
| Drain-Source Breakdown Voltage | VDS | -30 | | | V | VGS = 0 V, ID = -250 µA | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | | -3 | V | VDS = VGS, ID = -250 µA | 2 |
| Gate-Body Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS = -30 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -50 | µA | VDS = -30 V, VGS = 0 V, TJ = 125 °C | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -250 | µA | VDS = -30 V, VGS = 0 V, TJ = 175 °C | 2 |
| On-State Drain Current | ID(on) | -120 | | | A | VDS = -5 V, VGS = -10 V | 2 |
| Forward Voltage | VSD | | -1.2 | -1.5 | V | IF = -75 A, VGS = 0 V | 2 |
| Reverse Recovery Time | trr | | 55 | 100 | ns | IF = -75 A, dI/dt = 100 A/µs | 2 |
| Reverse Recovery Charge | Qrr | | 0.07 | 0.25 | µC | IF = -75 A, dI/dt = 100 A/µs | 2 |
| Peak Reverse Recovery Current | IRM(REC) | | 2.5 | 5 | A | IF = -75 A, dI/dt = 100 A/µs | 2 |
## CAD (KiCad official)
- Symbol: `SQD40031EL_GE3-VB`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `sqd40031el-ge3-vb-etched.step` / `sqd40031el-ge3-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sqd40031el-ge3-vb.step` / `sqd40031el-ge3-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603384730478002176) (8 pp, sha256 `2ab732be9a2297a9`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sqd40031el-ge3-vb-datasheet.pdf)