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SQD19P06-60L_GE3-HXY

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HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SQD19P06-60L_GE3-HXY

HXY MOSFET · MOSFETs · TO-252-2L

SQD19P06-60L_GE3-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the datasheet gives a gate-source voltage limit of ±20 V and says the device operates with gate voltages as low as 4.5 V.
2 D passive Drain, on the center stub and the exposed tab; the drain-source voltage limit is -60 V and continuous drain current is -30 A at TC=25℃.
3 S passive Source; the continuous body-diode source-drain current is 30 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID -30 A TC=25℃ 1
Drain Current-Continuous ID -25.5 A TC=100℃ 1
Drain Current-Pulsed IDM -144 A Note 1 1
Maximum Power Dissipation PD 79 W TC=25℃ 1
Maximum Power Dissipation PD 39.5 W TC=100℃ 1
Avalanche energy EAS 196 mJ Note 2: TJ=25℃,VDD=40V,VG=-10V,Rg=25Ω,L=0.5mH 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 ℃ 1
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-60V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) -1 -1.8 -2.5 V VDS=VGS, ID=-250μA 2
Forward Transconductance gFS 35 S VDS=-5V, ID=-15A 2
Drain-Source On-State Resistance RDS(ON) 29 33 mΩ VGS=-10V, ID=-15A 2
Drain-Source On-State Resistance RDS(ON) 35 46 mΩ VGS=-4.5V, ID=-10A 2
Input Capacitance Ciss 4026 pF VDS=-25V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 134 pF VDS=-25V, VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 98 pF VDS=-25V, VGS=0V, f=1.0MHz 2
Turn-on Delay Time td(on) 12.2 nS VGS=-10V, VDS=-30V, RL=1.5Ω, RGEN=3Ω 2
Turn-on Rise Time tr 10 nS VGS=-10V, VDS=-30V, RL=1.5Ω, RGEN=3Ω 2
Turn-Off Delay Time td(off) 64 nS VGS=-10V, VDS=-30V, RL=1.5Ω, RGEN=3Ω 2
Turn-Off Fall Time tf 14 nS VGS=-10V, VDS=-30V, RL=1.5Ω, RGEN=3Ω 2
Total Gate Charge Qg 68 nC VGS=-10V, VDS=-30V, ID=-20A 2
Gate-Source Charge Qgs 10.5 nC VGS=-10V, VDS=-30V, ID=-20A 2
Gate-Drain Charge Qgd 13 nC VGS=-10V, VDS=-30V, ID=-20A 2
Source-Drain Current (Body Diode) ISD 30 A 2
Forward on Voltage VSD -1.2 V VGS=0V, IS=-15A 2
Reverse Recovery Time trr 26 ns IF=-20A, di/dt=100A/μs 2
Reverse Recovery Charge Qrr 29 nC IF=-20A, di/dt=100A/μs 2

CAD (KiCad official)

  • Symbol: SQD19P06-60L_GE3-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: sqd19p06-60l-ge3-hxy-etched.step / sqd19p06-60l-ge3-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sqd19p06-60l-ge3-hxy.step / sqd19p06-60l-ge3-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 7fd4bd13b796ac7d, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF