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SQ4946AEY-T1_GE3-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSQ4946AEY-T1_GE3-HXY
HXY MOSFET · MOSFETs · SOP-8
SQ4946AEY-T1_GE3-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the first N-channel MOSFET; the datasheet gives device-wide limits only, with VDS 60 V and VGS ±20 V. |
| 2 | G1 | input | Gate of the first MOSFET; the gate-source voltage is rated ±20 V (VGS) and the threshold VGS(th) is 1.5 to 2.5 V. |
| 3 | S2 | passive | Source terminal of the second N-channel MOSFET; the datasheet gives device-wide limits only, with VDS 60 V and VGS ±20 V. |
| 4 | G2 | input | Gate of the second MOSFET; the gate-source voltage is rated ±20 V (VGS) and the threshold VGS(th) is 1.5 to 2.5 V. |
| 5 | D2 | passive | Drain of the second MOSFET; the drain-source breakdown voltage BVDSS is 60 V minimum. |
| 6 | D2 | passive | Drain of the second MOSFET (second drain pin); the drain-source breakdown voltage BVDSS is 60 V minimum. |
| 7 | D1 | passive | Drain of the first MOSFET (second drain pin); the drain-source breakdown voltage BVDSS is 60 V minimum. |
| 8 | D1 | passive | Drain of the first MOSFET; the drain-source breakdown voltage BVDSS is 60 V minimum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | 20 | V | 1 | |||
| Drain Current | ID@TA=25℃ | 5 | A | VGS @ 4.5V | 1 | ||
| Drain Current | ID@TA=100℃ | 3.5 | A | VGS @ 4.5V | 1 | ||
| Pulsed Drain Current | IDM | 20 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 1.5 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 85 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V,ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS=0V, VDS=60V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 1.5 | 1.57 | 2.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) | 25 | 33 | mΩ | VGS=10V,ID=4A | 2 | |
| Drain-Source On Resistance | RDS(ON) | 33 | 43 | mΩ | VGS=4.5V,ID=3A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, ISD=1A | 2 | ||
| Continuous Drain Current | IS | 5 | A | VD=VG=0V | 2 | ||
| Pulsed Drain Current | ISM | 20 | A | 2 |
CAD (KiCad official)
- Symbol:
SQ4946AEY-T1_GE3-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
sq4946aey-t1-ge3-hxy-etched.step/sq4946aey-t1-ge3-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sq4946aey-t1-ge3-hxy.step/sq4946aey-t1-ge3-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
b57d548bf171d473, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).