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SQ4920EY-T1-GE3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSQ4920EY-T1-GE3-VB
VBsemi Elec · MOSFETs · SO-8
SQ4920EY-T1-GE3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of N-channel MOSFET 1; the device is rated for a 30 V drain-source voltage with VGS of ±20 V. |
| 2 | G1 | input | Gate of N-channel MOSFET 1; the gate-source voltage is limited to ±20 V. |
| 3 | S2 | passive | Source of N-channel MOSFET 2; the device is rated for a 30 V drain-source voltage with VGS of ±20 V. |
| 4 | G2 | input | Gate of N-channel MOSFET 2; the gate-source voltage is limited to ±20 V. |
| 5 | D2 | passive | Drain of N-channel MOSFET 2 (bonded together with pin 6); rated 30 V VDS and 8.5 A continuous ID at TC = 25 °C. |
| 6 | D2 | passive | Drain of N-channel MOSFET 2 (bonded together with pin 5); rated 30 V VDS and 8.5 A continuous ID at TC = 25 °C. |
| 7 | D1 | passive | Drain of N-channel MOSFET 1 (bonded together with pin 8); rated 30 V VDS and 8.5 A continuous ID at TC = 25 °C. |
| 8 | D1 | passive | Drain of N-channel MOSFET 1 (bonded together with pin 7); rated 30 V VDS and 8.5 A continuous ID at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 8.5 | A | TC = 25 °C (TJ = 150 °C) | 1 | ||
| Continuous Drain Current | ID | 7.5 | A | TC = 70 °C (TJ = 150 °C) | 1 | ||
| Continuous Drain Current | ID | 7.2 | A | TA = 25 °C; notes b, c | 1 | ||
| Continuous Drain Current | ID | 5.9 | A | TA = 70 °C; notes b, c | 1 | ||
| Pulsed Drain Current | IDM | 30 | A | 1 | |||
| Source-Drain Current Diode Current | IS | 2.8 | A | TC = 25 °C | 1 | ||
| Source-Drain Current Diode Current | IS | 1.8 | A | TA = 25 °C; notes b, c | 1 | ||
| Pulsed Source-Drain Current | ISM | 30 | A | 1 | |||
| Single Pulse Avalanche Current | IAS | 10 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 5 | 1 | ||||
| Maximum Power Dissipation | PD | 3.1 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 2 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.25 | W | TA = 70 °C; notes b, c | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 52 | 62.5 | °C/W | t ≤ 10 s; notes b, d | 1 | |
| Maximum Junction-to-Foot (Drain) Steady-State | RthJF | 30 | 40 | °C/W | Steady-state | 1 | |
| Drain-Source Breakdown Voltage | VDS | 30 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.2 | 2.5 | V | VDS = VGS, ID = 250 µA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| Gate Resistance | Rg | 0.5 | 2.6 | 5.2 | f = 1 MHz | 2 | |
| Total Gate Charge | Qg | 14.5 | 22 | nC | VDS = 15 V, VGS = 10 V, ID = 8 A | 2 | |
| Turn-On Delay Time | td(on) | 14 | 28 | ns | VDD = 15 V, ID 5 A, VGEN = 4.5 V | 2 | |
| Rise Time | tr | 45 | 80 | ns | VDD = 15 V, ID 5 A, VGEN = 4.5 V | 2 | |
| Turn-Off Delay Time | td(off) | 18 | 35 | ns | VDD = 15 V, ID 5 A, VGEN = 4.5 V | 2 | |
| Fall Time | tf | 12 | 24 | ns | VDD = 15 V, ID 5 A, VGEN = 4.5 V | 2 | |
| Turn-On Delay Time | td(on) | 7 | 14 | ns | VDD = 15 V, ID 5 A, VGEN = 10 V | 2 | |
| Rise Time | tr | 10 | 20 | ns | VDD = 15 V, ID 5 A, VGEN = 10 V | 2 | |
| Turn-Off Delay Time | td(off) | 15 | 30 | ns | VDD = 15 V, ID 5 A, VGEN = 10 V | 2 | |
| Fall Time | tf | 7 | 14 | ns | VDD = 15 V, ID 5 A, VGEN = 10 V | 2 | |
| Body Diode Voltage | VSD | 0.77 | 1.1 | V | IS = 2 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 17 | 34 | ns | IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 9 | 18 | nC | IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
CAD (KiCad official)
- Symbol:
SQ4920EY-T1-GE3-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
sq4920ey-t1-ge3-vb-etched.step/sq4920ey-t1-ge3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sq4920ey-t1-ge3-vb.step/sq4920ey-t1-ge3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
1b68b371e4f19a32, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).