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SQ4431EY-T1_GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSQ4431EY-T1_GE3
Vishay Intertech · MOSFETs · SO-8
SQ4431EY-T1_GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; continuous source (diode conduction) current IS is -5.4 A with VDS rated -30 V. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; continuous source (diode conduction) current IS is -5.4 A with VDS rated -30 V. |
| 3 | S | passive | Source terminal of the P-channel MOSFET; continuous source (diode conduction) current IS is -5.4 A with VDS rated -30 V. |
| 4 | G | input | Gate terminal; gate-source voltage is limited to ±20 V, with threshold VGS(th) between -1.5 V and -2.5 V. |
| 5 | D | passive | Drain terminal; continuous drain current ID is -10.8 A at TC = 25 °C (-6.2 A at TC = 125 °C) with VDS rated -30 V. |
| 6 | D | passive | Drain terminal; continuous drain current ID is -10.8 A at TC = 25 °C (-6.2 A at TC = 125 °C) with VDS rated -30 V. |
| 7 | D | passive | Drain terminal; continuous drain current ID is -10.8 A at TC = 25 °C (-6.2 A at TC = 125 °C) with VDS rated -30 V. |
| 8 | D | passive | Drain terminal; continuous drain current ID is -10.8 A at TC = 25 °C (-6.2 A at TC = 125 °C) with VDS rated -30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | -30 | V | VGS = 0, ID = - 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -1.5 | -2 | -2.5 | V | VDS = VGS, ID = - 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VGS = 0 V, VDS = - 30 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -50 | μA | VGS = 0 V, VDS = - 30 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -150 | μA | VGS = 0 V, VDS = - 30 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | -40 | A | VGS = - 10 V, VDS - 5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.045 | 0.052 | Ω | VGS = - 4.5 V, ID = - 5 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.022 | 0.03 | Ω | VGS = - 10 V, ID = - 6 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.027 | 0.032 | Ω | VGS = - 10 V, ID = - 6 A, TJ = 125 °C | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.035 | 0.042 | Ω | VGS = - 10 V, ID = - 6 A, TJ = 175 °C | 2 | |
| Input Capacitance | Ciss | 1010 | 1265 | pF | VGS = 0 V, VDS = - 15 V, f = 1 MHz | 2 | |
| Gate Resistance | Rg | 1.5 | 3.36 | 5.5 | Ω | f = 1 MHz | 2 |
| Forward Voltage | VSD | -0.8 | -1.1 | V | IF = - 2.1 A, VGS = 0 | 2 | |
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -10.8 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | -6.2 | A | TC = 125 °C | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | -5.4 | A | 1 | |||
| Pulsed Drain Current | IDM | -43.2 | A | pulse width 300 μs, duty cycle 2 % | 1 | ||
| Single Pulse Avalanche Current | IAS | -21 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 22 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 6 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 2 | W | TC = 125 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 92 | °C/W | PCB Mount | 1 | ||
| Junction-to-Foot (Drain) Thermal Resistance | RthJF | 25 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
SQ4431EY-T1_GE3 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
sq4431ey-t1-ge3-etched.step/sq4431ey-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sq4431ey-t1-ge3.step/sq4431ey-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
398d1a38f7ae22c2, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).