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SQ4153EY-T1_GE3

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Vishay Intertech MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SQ4153EY-T1_GE3

Vishay Intertech · MOSFETs · SOIC-8

SQ4153EY-T1_GE3 from Vishay Intertech, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET; the device is rated for VDS of -12 V and continuous source (diode) current of -6.5 A.
2 S passive Source of the P-channel MOSFET; the device is rated for VDS of -12 V and continuous source (diode) current of -6.5 A.
3 S passive Source of the P-channel MOSFET; the device is rated for VDS of -12 V and continuous source (diode) current of -6.5 A.
4 G input Gate of the P-channel MOSFET; maximum gate-source voltage is ±8 V with a threshold of -0.4 V to -0.9 V.
5 D passive Drain of the P-channel MOSFET; continuous drain current is -25 A at TC = 25 °C (package limited) and pulsed drain current is -100 A.
6 D passive Drain of the P-channel MOSFET; continuous drain current is -25 A at TC = 25 °C (package limited) and pulsed drain current is -100 A.
7 D passive Drain of the P-channel MOSFET; continuous drain current is -25 A at TC = 25 °C (package limited) and pulsed drain current is -100 A.
8 D passive Drain of the P-channel MOSFET; continuous drain current is -25 A at TC = 25 °C (package limited) and pulsed drain current is -100 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOIC-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS -12 V TC = 25 °C 1
Gate-source voltage VGS -8 8 V TC = 25 °C 1
Continuous drain current ID -25 A TC = 25 °C 1
Continuous drain current ID -14 A TC = 125 °C 1
Continuous source current (diode conduction) IS -6.5 A TC = 25 °C 1
Pulsed drain current IDM -100 A TC = 25 °C 1
Single pulse avalanche current IAS -19 A L = 0.1 mH 1
Single pulse avalanche energy EAS 18 mJ L = 0.1 mH 1
Maximum power dissipation PD 7.1 W TC = 25 °C 1
Maximum power dissipation PD 2.3 W TC = 125 °C 1
Operating junction and storage temperature range TJ, Tstg -55 175 °C 1
Junction-to-ambient PCB mount RthJA 85 °C/W When mounted on 1" square PCB (FR4 material) 1
Junction-to-foot (drain) RthJF 21 °C/W 1
Drain-source breakdown voltage VDS -12 V VGS = 0, ID = -250 μA 2
Gate-source threshold voltage VGS(th) -0.4 -0.6 -0.9 V VDS = VGS, ID = -250 μA 2
Gate-source leakage IGSS 100 nA VDS = 0 V, VGS = ± 8 V 2
Zero gate voltage drain current IDSS -1 μA VGS = 0 V, VDS = -12 V 2
Zero gate voltage drain current IDSS -50 μA VGS = 0 V, VDS = -12 V, TJ = 125 °C 2
Zero gate voltage drain current IDSS -150 μA VGS = 0 V, VDS = -12 V, TJ = 175 °C 2
On-state drain current ID(on) -30 A VGS = -4.5 V, VDS ≥ -5 V 2
Drain-source on-state resistance RDS(on) 0.0051 0.00832 Ω VGS = -4.5 V, ID = -14 A 2
Drain-source on-state resistance RDS(on) 0.009 Ω VGS = -4.5 V, ID = -14 A, TJ = 125 °C 2
Drain-source on-state resistance RDS(on) 0.011 Ω VGS = -4.5 V, ID = -14 A, TJ = 175 °C 2
Drain-source on-state resistance RDS(on) 0.0065 0.01 Ω VGS = -2.5 V, ID = -13 A 2
Drain-source on-state resistance RDS(on) 0.0094 0.0143 Ω VGS = -1.8 V, ID = -12 A 2
Input capacitance Ciss 7500 11000 pF VGS = 0 V, VDS = -6 V, f = 1 MHz 2
Output capacitance Coss 2800 4200 pF VGS = 0 V, VDS = -6 V, f = 1 MHz 2
Reverse transfer capacitance Crss 2400 3600 pF VGS = 0 V, VDS = -6 V, f = 1 MHz 2
Total gate charge Qg 101 151 nC VGS = -4.5 V, VDS = -6 V, ID = -10.5 A 2
Gate resistance Rg 1.1 2.2 3.2 Ω f = 1 MHz 2
Turn-on delay time td(on) 31 42 ns VDD = -6 V, RL = 15 Ω, ID ≅ -10.5 A, VGEN = -4.5 V, Rg = 6 Ω 2
Rise time tr 168 224 ns VDD = -6 V, RL = 15 Ω, ID ≅ -10.5 A, VGEN = -4.5 V, Rg = 6 Ω 2
Turn-off delay time td(off) 310 412 ns VDD = -6 V, RL = 15 Ω, ID ≅ -10.5 A, VGEN = -4.5 V, Rg = 6 Ω 2
Fall time tf 283 376 ns VDD = -6 V, RL = 15 Ω, ID ≅ -10.5 A, VGEN = -4.5 V, Rg = 6 Ω 2
Pulsed diode current ISM -100 A 2
Forward voltage VSD -0.8 -1.2 V IF = -10.5 A, VGS = 0 2
Forward transconductance gfs 54 S VDS = -6 V, ID = -10.5 A 2
Gate-source charge Qgs 15 nC VGS = -4.5 V, VDS = -6 V, ID = -10.5 A 2
Gate-drain charge Qgd 45 nC VGS = -4.5 V, VDS = -6 V, ID = -10.5 A 2

CAD (KiCad official)

  • Symbol: SQ4153EY-T1_GE3
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: sq4153ey-t1-ge3-etched.step / sq4153ey-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sq4153ey-t1-ge3.step / sq4153ey-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 e293508d46d2f95b, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF