component
SQ3493EV-T1_GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSQ3493EV-T1_GE3
Vishay Intertech · MOSFETs · TSOP-6
SQ3493EV-T1_GE3 from Vishay Intertech, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage VDS of -20 V with continuous drain current ID of -8 A at TC = 25 °C. |
| 2 | D | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage VDS of -20 V with continuous drain current ID of -8 A at TC = 25 °C. |
| 3 | G | input | Gate terminal of the P-channel MOSFET, with a gate-source voltage VGS limit of ±12 V. |
| 4 | S | passive | Source terminal of the P-channel MOSFET, with a continuous source (diode conduction) current IS of -4.5 A. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage VDS of -20 V with continuous drain current ID of -8 A at TC = 25 °C. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage VDS of -20 V with continuous drain current ID of -8 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TSOP-6 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 12 V | 2 | |
| Gate-source threshold voltage | VGS(th) | -0.6 | -1 | -1.4 | V | VDS = VGS, ID = -250 μA | 2 |
| Drain-source breakdown voltage | VDS | -20 | V | VGS = 0, ID = -250 μA | 2 | ||
| Zero gate voltage drain current (25 °C) | IDSS | -1 | μA | VGS = 0 V VDS = -20 V | 2 | ||
| Zero gate voltage drain current (TJ = 125 °C) | IDSS | -50 | μA | VGS = 0 V VDS = -20 V, TJ = 125 °C | 2 | ||
| Zero gate voltage drain current (TJ = 175 °C) | IDSS | -150 | μA | VGS = 0 V VDS = -20 V, TJ = 175 °C | 2 | ||
| On-state drain current | ID(on) | -15 | A | VGS = -4.5 V VDS ≤ -5 V | 2 | ||
| Drain-source on-state resistance (VGS = -4.5 V) | RDS(on) | 0.016 | 0.021 | Ω | VGS = -4.5 V ID = -5 A | 2 | |
| Drain-source on-state resistance (VGS = -4.5 V, TJ = 125 °C) | RDS(on) | 0.034 | Ω | VGS = -4.5 V ID = -5 A, TJ = 125 °C | 2 | ||
| Drain-source on-state resistance (VGS = -4.5 V, TJ = 175 °C) | RDS(on) | 0.034 | Ω | VGS = -4.5 V ID = -5 A, TJ = 175 °C | 2 | ||
| Drain-source on-state resistance (VGS = -2.5 V) | RDS(on) | 0.026 | 0.032 | Ω | VGS = -2.5 V ID = -4 A | 2 | |
| Input capacitance | Ciss | 2354 | 3300 | pF | VGS = 0 V VDS = -10 V, f = 1 MHz | 2 | |
| Output capacitance | Coss | 298 | 420 | pF | 2 | ||
| Reverse transfer capacitance | Crss | 290 | 405 | pF | 2 | ||
| Total gate charge | Qg | 22.7 | 34 | nC | VGS = -4.5 V VDS = -10 V, ID = -7.9 A | 2 | |
| Turn-on delay time | td(on) | 18 | 25 | ns | VDD = -10 V, RL = 1.27 Ω, ID ≅ -7.9 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Rise time | tr | 41 | 58 | ns | 2 | ||
| Turn-off delay time | td(off) | 54 | 76 | ns | 2 | ||
| Fall time | tf | 51 | 71 | ns | 2 | ||
| Gate resistance | Rg | 2.3 | 5.9 | 9.4 | Ω | f = 1 MHz | 2 |
| Pulsed current (source-drain diode) | ISM | -32 | A | 2 | |||
| Forward voltage | VSD | -0.8 | -1.2 | V | IF = -5 A, VGS = 0 V | 2 | |
| Drain-source voltage | VDS | -20 | V | 1 | |||
| Gate-source voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous drain current | ID | -8 | A | TC = 25 °C | 1 | ||
| Continuous drain current | ID | -7 | A | TC = 125 °C | 1 | ||
| Continuous source current (diode conduction) | IS | -4.5 | A | 1 | |||
| Pulsed drain current | IDM | -32 | A | 1 | |||
| Single pulse avalanche current | IAS | -17 | A | L = 0.1 mH | 1 | ||
| Single pulse avalanche energy | EAS | 14.4 | mJ | 1 | |||
| Maximum power dissipation | PD | 5 | W | TC = 25 °C | 1 | ||
| Maximum power dissipation | PD | 1.67 | W | TC = 125 °C | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-ambient thermal resistance | RthJA | 110 | °C/W | PCB mount | 1 | ||
| Junction-to-foot (drain) thermal resistance | RthJF | 30 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
SQ3493EV-T1_GE3 - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
sq3493ev-t1-ge3-etched.step/sq3493ev-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sq3493ev-t1-ge3.step/sq3493ev-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (8 pp, sha256
7190d234c2573221, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).