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SQ3469EV-T1-GE3-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TSOP-6. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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docs sq3469ev-t1-ge3-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
viewers sq3469ev-t1-ge3-vb: viewers · Ray 1mo ago
package.json Publish 0.1.0 · Ray 1mo ago
page.json sq3469ev-t1-ge3-vb: component.models_3d pose record per STEP (Z-up, seated z=0, pad-centre origin, identity binding) · Ray 1mo ago
README.md sq3469ev-t1-ge3-vb: laser-etched CAD + chip hero (factory 2.0.0 backfill) · Ray 1mo ago
sq3469ev-t1-ge3-vb-etched.fit.json sq3469ev-t1-ge3-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
sq3469ev-t1-ge3-vb-etched.glb sq3469ev-t1-ge3-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
sq3469ev-t1-ge3-vb-etched.step sq3469ev-t1-ge3-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
sq3469ev-t1-ge3-vb.glb Publish 0.1.0 · Ray 1mo ago
sq3469ev-t1-ge3-vb.kicad_mod Publish 0.1.0 · Ray 1mo ago
sq3469ev-t1-ge3-vb.kicad_sym Publish 0.1.0 · Ray 1mo ago
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sq3469ev-t1-ge3-vb.step Publish 0.1.0 · Ray 1mo ago

SQ3469EV-T1-GE3-VB

VBsemi Elec · MOSFETs · TSOP-6

SQ3469EV-T1-GE3-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain of the P-channel MOSFET. Pins 1, 2, 5, and 6 are all connected internally to the drain to lower thermal resistance and Rds(on). VDS max = -30 V.
2 D passive Drain of the P-channel MOSFET, tied internally with pins 1, 5, 6. VDS max = -30 V.
3 G input Gate of the P-channel MOSFET. VGS absolute maximum = ±20 V; VGS(th) = -0.5 V to -2.0 V. Drives the channel between drain and source.
4 S passive Source of the P-channel MOSFET. Reference for VGS drive; body diode anode is internally connected to source.
5 D passive Drain of the P-channel MOSFET, tied internally with pins 1, 2, 6. VDS max = -30 V.
6 D passive Drain of the P-channel MOSFET, tied internally with pins 1, 2, 5. VDS max = -30 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Ordering variants

Same part, different packaging or reel option.

  • SQ3469EV-T1-GE3-VB

CAD (KiCad official)

  • Symbol: SQ3469EV-T1-GE3-VB
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: sq3469ev-t1-ge3-vb-etched.step / sq3469ev-t1-ge3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sq3469ev-t1-ge3-vb.step / sq3469ev-t1-ge3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 4ed828c9d37876c7, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF