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SQ3426CEV-T1_GE3

Public Made by Adom

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Vishay Intertech MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SQ3426CEV-T1_GE3

Vishay Intertech · MOSFETs · TSOP-6

SQ3426CEV-T1_GE3 from Vishay Intertech, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain of the N-channel MOSFET, rated for VDS 60 V and continuous ID 7 A at TC = 25 °C, tied internally with pins 2, 5 and 6.
2 D passive Drain of the N-channel MOSFET, rated for VDS 60 V and continuous ID 7 A at TC = 25 °C, tied internally with pins 1, 5 and 6.
3 G input Gate of the N-channel MOSFET, with VGS maximum of ±20 V and threshold VGS(th) of 1.5 V min to 2.5 V max at ID = 250 μA.
4 S passive Source of the N-channel MOSFET, with continuous source (body diode) current IS of 6 A.
5 D passive Drain of the N-channel MOSFET, rated for VDS 60 V and continuous ID 7 A at TC = 25 °C, tied internally with pins 1, 2 and 6.
6 D passive Drain of the N-channel MOSFET, rated for VDS 60 V and continuous ID 7 A at TC = 25 °C, tied internally with pins 1, 2 and 5.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 60 V TC = 25 °C 1
Gate-source voltage VGS -20 20 V TC = 25 °C 1
Continuous drain current ID 7 A TC = 25 °C 1
Continuous drain current ID 4 A TC = 125 °C 1
Continuous source current (diode conduction) IS 6 A TC = 25 °C 1
Pulsed drain current IDM 29 A Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % 1
Single pulse avalanche current IAS 10 A L = 0.1 mH 1
Single pulse avalanche energy EAS 5 mJ L = 0.1 mH 1
Maximum power dissipation PD 5 W TC = 25 °C 1
Maximum power dissipation PD 1.6 W TC = 125 °C 1
Operating junction and storage temperature range TJ, Tstg -55 175 °C 1
Junction to ambient RthJA 110 °C/W PCB mount, 1" square PCB (FR4) 1
Junction to foot (drain) RthJF 30 °C/W 1
Drain-source breakdown voltage VDS 60 V VGS = 0, ID = 250 μA 2
Gate-source threshold voltage VGS(th) 1.5 2 2.5 V VDS = VGS, ID = 250 μA 2
Gate-source leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V 2
Gate-source leakage IGSS -300 300 nA VDS = 0 V, VGS = ± 20 V 2
Zero gate voltage drain current IDSS 1 μA VGS = 0 V, VDS = 60 V 2
Zero gate voltage drain current IDSS 50 μA VGS = 0 V, VDS = 60 V, TJ = 125 °C 2
Zero gate voltage drain current IDSS 150 μA VGS = 0 V, VDS = 60 V, TJ = 175 °C 2
On-state drain current ID(on) 10 A VGS = 10 V, VDS ≥ 5 V 2
Drain-source on-state resistance RDS(on) 0.034 0.042 Ω VGS = 10 V, ID = 5 A 2
Drain-source on-state resistance RDS(on) 0.073 Ω VGS = 10 V, ID = 5 A, TJ = 125 °C 2
Drain-source on-state resistance RDS(on) 0.092 Ω VGS = 10 V, ID = 5 A, TJ = 175 °C 2
Drain-source on-state resistance RDS(on) 0.037 0.063 Ω VGS = 4.5 V, ID = 4 A 2
Forward transconductance gfs 21 S VDS = 15 V, ID = 4 A 2
Input Capacitance Ciss 718 790 pF VGS = 0 V, VDS = 30 V, f = 1 MHz 2
Output Capacitance Coss 75 110 pF VGS = 0 V, VDS = 30 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 29 70 pF VGS = 0 V, VDS = 30 V, f = 1 MHz 2
Total Gate Charge Qg 6.8 12 nC VGS = 4.5 V, VDS = 30 V, ID = 4 A 2
Gate-Source Charge Qgs 2.9 nC VGS = 4.5 V, VDS = 30 V, ID = 4 A 2
Gate-Drain Charge Qgd 2 nC VGS = 4.5 V, VDS = 30 V, ID = 4 A 2
Gate Resistance Rg 1.9 3.1 5.7 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 9 14 ns VDD = 30 V, RL = 7.5 Ω, ID ≅ 4 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 3 18 ns VDD = 30 V, RL = 7.5 Ω, ID ≅ 4 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 19 29 ns VDD = 30 V, RL = 7.5 Ω, ID ≅ 4 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 4 11 ns VDD = 30 V, RL = 7.5 Ω, ID ≅ 4 A, VGEN = 10 V, Rg = 1 Ω 2
Pulsed current (diode) ISM 29 A 2
Forward voltage VSD 0.77 1.2 V IF = 1.6 A, VGS = 0 V 2
Body diode reverse recovery time trr 19 38 ns IF = 4 A, di/dt = 100 A/μs 2
Body diode reverse recovery charge Qrr 18 36 nC IF = 4 A, di/dt = 100 A/μs 2
Reverse recovery fall time ta 15 ns IF = 4 A, di/dt = 100 A/μs 2
Reverse recovery rise time tb 4 ns IF = 4 A, di/dt = 100 A/μs 2
Body diode peak reverse recovery current IRM(REC) -2.1 A IF = 4 A, di/dt = 100 A/μs 2

CAD (KiCad official)

  • Symbol: SQ3426CEV-T1_GE3
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: sq3426cev-t1-ge3-etched.step / sq3426cev-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sq3426cev-t1-ge3.step / sq3426cev-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 952d69cf336454e7, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF