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Ray Publish 0.1.0 e4336d6 23d ago

SQ3426AEEV-T1_GE3

Vishay Intertech · MOSFETs · TSOP-6

SQ3426AEEV-T1_GE3 from Vishay Intertech, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain terminal, internally common with pins 2, 5 and 6; the absolute maximum drain-source voltage VDS is 60 V and continuous drain current is 7 A at TC = 25 °C.
2 D passive Drain terminal, internally common with pins 1, 5 and 6; the absolute maximum drain-source voltage VDS is 60 V and continuous drain current is 7 A at TC = 25 °C.
3 G input Gate terminal of the MOSFET; the gate-source voltage is rated at ±20 V maximum.
4 S passive Source terminal of the MOSFET; continuous source (body diode) current IS is rated at 6 A.
5 D passive Drain terminal, internally common with pins 1, 2 and 6; the absolute maximum drain-source voltage VDS is 60 V and continuous drain current is 7 A at TC = 25 °C.
6 D passive Drain terminal, internally common with pins 1, 2 and 5; the absolute maximum drain-source voltage VDS is 60 V and continuous drain current is 7 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 7 A TC = 25 °C 1
Continuous Drain Current ID 4 A TC = 125 °C 1
Continuous Source Current (Diode Conduction) IS 6 A 1
Pulsed Drain Current IDM 29 A 1
Single Pulse Avalanche Current IAS 10 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 5 mJ 1
Maximum Power Dissipation PD 5 W TC = 25 °C 1
Maximum Power Dissipation PD 1.6 W TC = 125 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient Thermal Resistance (PCB Mount) RthJA 110 °C/W PCB mount 1
Junction-to-Foot (Drain) Thermal Resistance RthJF 30 °C/W 1
Drain-Source Breakdown Voltage VDS 60 V VGS = 0, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 1.5 2 2.5 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -500 500 nA VDS = 0 V, VGS = ±12 V 2
Gate-Source Leakage IGSS -1 1 mA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS = 0 V, VDS = 60 V 2
Zero Gate Voltage Drain Current IDSS 50 μA VGS = 0 V, VDS = 60 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 150 μA VGS = 0 V, VDS = 60 V, TJ = 175 °C 2
On-State Drain Current ID(on) 10 A VGS = 10 V, VDS ≥ 5 V 2
Drain-Source On-State Resistance RDS(on) 0.032 0.042 Ω VGS = 10 V, ID = 5 A 2
Drain-Source On-State Resistance RDS(on) 0.035 0.063 Ω VGS = 4.5 V, ID = 4 A 2
Input Capacitance Ciss 800 1100 pF VGS = 0 V, VDS = 30 V, f = 1 MHz 2
Output Capacitance Coss 75 100 pF VGS = 0 V, VDS = 30 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 35 55 pF VGS = 0 V, VDS = 30 V, f = 1 MHz 2
Total Gate Charge Qg 11.5 14 nC VGS = 10 V, VDS = 30 V, ID = 6 A 2
Gate Resistance Rg 1.9 3.8 5.7 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 7 10 ns VDD = 30 V, RL = 7.5 Ω, ID ≅ 4 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 10 14 ns VDD = 30 V, RL = 7.5 Ω, ID ≅ 4 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 20 25 ns VDD = 30 V, RL = 7.5 Ω, ID ≅ 4 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 46 ns VDD = 30 V, RL = 7.5 Ω, ID ≅ 4 A, VGEN = 10 V, Rg = 1 Ω 2
Pulsed Current ISM 29 A 2
Forward Voltage VSD 0.75 1.2 V IF = 1.6 A, VGS = 0 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper pins 1,2,5, and 6. The copper plane connects the drain pins 9

CAD (KiCad official)

  • Symbol: SQ3426AEEV-T1_GE3
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: sq3426aeev-t1-ge3-etched.step / sq3426aeev-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sq3426aeev-t1-ge3.step / sq3426aeev-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (12 pp, sha256 c66b5f29737b44c1, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF