component
SQ3410EV-T1_GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SQ3410EV-T1_GE3
Vishay Intertech · MOSFETs · TSOP-6
SQ3410EV-T1_GE3 from Vishay Intertech, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal; pins 1, 2, 5 and 6 are the drain and are connected together internally, with VDS rated 30 V and continuous drain current 8 A at TC = 25 °C. |
| 2 | D | passive | Drain terminal; pins 1, 2, 5 and 6 are the drain and are connected together internally, with VDS rated 30 V and continuous drain current 8 A at TC = 25 °C. |
| 3 | G | input | Gate terminal; gate-source voltage is rated ±20 V per the absolute maximum ratings. |
| 4 | S | passive | Source terminal; continuous source (diode conduction) current IS is rated 6.3 A. |
| 5 | D | passive | Drain terminal; pins 1, 2, 5 and 6 are the drain and are connected together internally, with VDS rated 30 V and continuous drain current 8 A at TC = 25 °C. |
| 6 | D | passive | Drain terminal; pins 1, 2, 5 and 6 are the drain and are connected together internally, with VDS rated 30 V and continuous drain current 8 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TSOP-6 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 8 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 6.8 | A | TC = 125 °C | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | 6.3 | A | 1 | |||
| Pulsed Drain Current | IDM | 32 | A | Pulse test; pulse width 300 μs, duty cycle 2 % | 1 | ||
| Single Pulse Avalanche Current | IAS | 22 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 24 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 5 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.6 | W | TC = 125 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient | RthJA | 110 | °C/W | PCB mount, 1 in square FR-4 PCB | 1 | ||
| Junction-to-Foot (Drain) | RthJF | 30 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | VDS | 30 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1.5 | 2 | 2.5 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS = 0 V, VDS = 30 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | μA | VGS = 0 V, VDS = 30 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 150 | μA | VGS = 0 V, VDS = 30 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | 10 | A | VGS = 10 V, VDS ≥ 5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.014 | 0.0175 | Ω | VGS = 10 V, ID = 5 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.03 | Ω | VGS = 10 V, ID = 5 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.036 | Ω | VGS = 10 V, ID = 5 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.017 | 0.0213 | Ω | VGS = 4.5 V, ID = 4 A | 2 | |
| Input Capacitance | Ciss | 804 | 1005 | pF | VGS = 0 V, VDS = 15 V, f = 1 MHz | 2 | |
| Output Capacitance | Coss | 175 | 219 | pF | VGS = 0 V, VDS = 15 V, f = 1 MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 68 | 85 | pF | VGS = 0 V, VDS = 15 V, f = 1 MHz | 2 | |
| Total Gate Charge | Qg | 14 | 21 | nC | VGS = 10 V, VDS = 15 V, ID = 5 A | 2 | |
| Gate Resistance | Rg | 1.5 | 3.91 | 7 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 9 | 14 | ns | VDD = 15 V, RL = 3, ID 5 A, VGEN = 10 V, Rg = 1 | 2 | |
| Rise Time | tr | 12 | 18 | ns | VDD = 15 V, RL = 3, ID 5 A, VGEN = 10 V, Rg = 1 | 2 | |
| Turn-Off Delay Time | td(off) | 20 | 30 | ns | VDD = 15 V, RL = 3, ID 5 A, VGEN = 10 V, Rg = 1 | 2 | |
| Fall Time | tf | 7 | 11 | ns | VDD = 15 V, RL = 3, ID 5 A, VGEN = 10 V, Rg = 1 | 2 | |
| Pulsed Current | ISM | 32 | A | 2 | |||
| Forward Voltage | VSD | 0.8 | 1.2 | V | IF = 5 A, VGS = 0 V | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | pins 1,2,5, and 6. The copper plane connects the drain pins | 8 |
CAD (KiCad official)
- Symbol:
SQ3410EV-T1_GE3 - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
sq3410ev-t1-ge3-etched.step/sq3410ev-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sq3410ev-t1-ge3.step/sq3410ev-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (11 pp, sha256
a36ab3a12c53b21b, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SQ3410EV-T1_GE3
**Vishay Intertech** · MOSFETs · TSOP-6
SQ3410EV-T1_GE3 from Vishay Intertech, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal; pins 1, 2, 5 and 6 are the drain and are connected together internally, with VDS rated 30 V and continuous drain current 8 A at TC = 25 °C. |
| 2 | D | passive | Drain terminal; pins 1, 2, 5 and 6 are the drain and are connected together internally, with VDS rated 30 V and continuous drain current 8 A at TC = 25 °C. |
| 3 | G | input | Gate terminal; gate-source voltage is rated ±20 V per the absolute maximum ratings. |
| 4 | S | passive | Source terminal; continuous source (diode conduction) current IS is rated 6.3 A. |
| 5 | D | passive | Drain terminal; pins 1, 2, 5 and 6 are the drain and are connected together internally, with VDS rated 30 V and continuous drain current 8 A at TC = 25 °C. |
| 6 | D | passive | Drain terminal; pins 1, 2, 5 and 6 are the drain and are connected together internally, with VDS rated 30 V and continuous drain current 8 A at TC = 25 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TSOP-6 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 8 | A | TC = 25 °C | 1 |
| Continuous Drain Current | ID | | | 6.8 | A | TC = 125 °C | 1 |
| Continuous Source Current (Diode Conduction) | IS | | | 6.3 | A | | 1 |
| Pulsed Drain Current | IDM | | | 32 | A | Pulse test; pulse width 300 μs, duty cycle 2 % | 1 |
| Single Pulse Avalanche Current | IAS | | | 22 | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Energy | EAS | | | 24 | mJ | | 1 |
| Maximum Power Dissipation | PD | | | 5 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 1.6 | W | TC = 125 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Junction-to-Ambient | RthJA | | | 110 | °C/W | PCB mount, 1 in square FR-4 PCB | 1 |
| Junction-to-Foot (Drain) | RthJF | | | 30 | °C/W | | 1 |
| Drain-Source Breakdown Voltage | VDS | 30 | | | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1.5 | 2 | 2.5 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VGS = 0 V, VDS = 30 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 50 | μA | VGS = 0 V, VDS = 30 V, TJ = 125 °C | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 150 | μA | VGS = 0 V, VDS = 30 V, TJ = 175 °C | 2 |
| On-State Drain Current | ID(on) | 10 | | | A | VGS = 10 V, VDS ≥ 5 V | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.014 | 0.0175 | Ω | VGS = 10 V, ID = 5 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.03 | Ω | VGS = 10 V, ID = 5 A, TJ = 125 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.036 | Ω | VGS = 10 V, ID = 5 A, TJ = 175 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.017 | 0.0213 | Ω | VGS = 4.5 V, ID = 4 A | 2 |
| Input Capacitance | Ciss | | 804 | 1005 | pF | VGS = 0 V, VDS = 15 V, f = 1 MHz | 2 |
| Output Capacitance | Coss | | 175 | 219 | pF | VGS = 0 V, VDS = 15 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 68 | 85 | pF | VGS = 0 V, VDS = 15 V, f = 1 MHz | 2 |
| Total Gate Charge | Qg | | 14 | 21 | nC | VGS = 10 V, VDS = 15 V, ID = 5 A | 2 |
| Gate Resistance | Rg | 1.5 | 3.91 | 7 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | | 9 | 14 | ns | VDD = 15 V, RL = 3, ID 5 A, VGEN = 10 V, Rg = 1 | 2 |
| Rise Time | tr | | 12 | 18 | ns | VDD = 15 V, RL = 3, ID 5 A, VGEN = 10 V, Rg = 1 | 2 |
| Turn-Off Delay Time | td(off) | | 20 | 30 | ns | VDD = 15 V, RL = 3, ID 5 A, VGEN = 10 V, Rg = 1 | 2 |
| Fall Time | tf | | 7 | 11 | ns | VDD = 15 V, RL = 3, ID 5 A, VGEN = 10 V, Rg = 1 | 2 |
| Pulsed Current | ISM | | | 32 | A | | 2 |
| Forward Voltage | VSD | | 0.8 | 1.2 | V | IF = 5 A, VGS = 0 V | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | | pins 1,2,5, and 6. The copper plane connects the drain pins | 8 |
## CAD (KiCad official)
- Symbol: `SQ3410EV-T1_GE3`
- Footprint: `Package_SO:TSOP-6_1.65x3.05mm_P0.95mm`
- 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files: `sq3410ev-t1-ge3-etched.step` / `sq3410ev-t1-ge3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sq3410ev-t1-ge3.step` / `sq3410ev-t1-ge3.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588923472642367488) (11 pp, sha256 `a36ab3a12c53b21b`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sq3410ev-t1-ge3-datasheet.pdf)