component
SQ2398ES-T1_GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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sq2398es-t1-ge3: specified limits as data (metadata.characteristics, 37 rows from the datasheet)
2 files changed
+496−1
README.md+44@@ -21,6 +21,50 @@ SQ2398ES-T1_GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 100 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current | ID | | | 1.6 | A | TC = 25 °C | 1 |+| Continuous Drain Current | ID | | | 0.9 | A | TC = 125 °C | 1 |+| Continuous Source Current (Diode Conduction) | IS | | | 2.5 | A | | 1 |+| Pulsed Drain Current | IDM | | | 6.6 | A | | 1 |+| Single Pulse Avalanche Current | IAS | | | 5 | A | L = 0.1 mH | 1 |+| Single Pulse Avalanche Energy | EAS | | | 1.2 | mJ | | 1 |+| Maximum Power Dissipation | PD | | | 2 | W | TC = 25 °C | 1 |+| Maximum Power Dissipation | PD | | | 0.6 | W | TC = 125 °C | 1 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |+| Junction-to-Ambient, PCB Mount | RthJA | | | 130 | °C/W | PCB mount | 1 |+| Junction-to-Foot (Drain) | RthJF | | | 75 | °C/W | | 1 |+| Drain-Source Breakdown Voltage | VDS | 100 | | | V | VGS = 0 V, ID = 250 μA | 2 |+| Gate-Source Threshold Voltage | VGS(th) | 2.5 | 3 | 3.5 | V | VDS = VGS, ID = 250 μA | 2 |+| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VGS = 0 V, VDS = 100 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 50 | μA | VGS = 0 V, VDS = 100 V, TJ = 125 °C | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 150 | μA | VGS = 0 V, VDS = 100 V, TJ = 175 °C | 2 |+| On-State Drain Current | ID(on) | 5 | | | A | VGS = 10 V, VDS ≥ 5 V | 2 |+| Drain-Source On-State Resistance | RDS(on) | | 0.24 | 0.3 | Ω | VGS = 10 V, ID = 1.5 A | 2 |+| Drain-Source On-State Resistance | RDS(on) | | | 0.552 | Ω | VGS = 10 V, ID = 1.5 A, TJ = 125 °C | 2 |+| Drain-Source On-State Resistance | RDS(on) | | | 0.72 | Ω | VGS = 10 V, ID = 1.5 A, TJ = 175 °C | 2 |+| Gate Resistance | Rg | 2.9 | 5.8 | 8.7 | Ω | f = 1 MHz | 2 |+| Total Gate Charge | Qg | | 2.3 | 3.4 | nC | VGS = 10 V, VDS = 50 V, ID = 1.5 A | 2 |+| Turn-On Delay Time | td(on) | | 5 | 6.9 | ns | VDD = 50 V, RL = 33, ID ≅ 1.5 A, VGEN = 10 V, Rg = 1 | 2 |+| Rise Time | tr | | 18 | 24 | ns | VDD = 50 V, RL = 33, ID ≅ 1.5 A, VGEN = 10 V, Rg = 1 | 2 |+| Fall Time | tf | | 17 | 23 | ns | VDD = 50 V, RL = 33, ID ≅ 1.5 A, VGEN = 10 V, Rg = 1 | 2 |+| Pulsed Current | ISM | | | 8 | A | | 2 |+| Forward Voltage | VSD | | 0.8 | 1.2 | V | IF = 1.5 A, VGS = 0 V | 2 |+| Forward Transconductance | gfs | | 3 | | S | VDS = 15 V, ID = 1.5 A | 2 |+| Input Capacitance | Ciss | | 152 | | pF | VGS = 0 V, VDS = 50 V, f = 1 MHz | 2 |+| Output Capacitance | Coss | | 28 | | pF | VGS = 0 V, VDS = 50 V, f = 1 MHz | 2 |+| Reverse Transfer Capacitance | Crss | | 12 | | pF | VGS = 0 V, VDS = 50 V, f = 1 MHz | 2 |+| Gate-Source Charge | Qgs | | 0.7 | | nC | | 2 |+| Gate-Drain Charge | Qgd | | 1.1 | | nC | | 2 |+| Turn-Off Delay Time | td(off) | | 79 | | ns | VDD = 50 V, RL = 33, ID ≅ 1.5 A, VGEN = 10 V, Rg = 1 | 2 |+ ## CAD (KiCad official) - Symbol: `SQ2398ES-T1_GE3`
page.json+452−1@@ -149,6 +149,457 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "d5cb5bd0c03f5ac0",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.6,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.9,+ "conditions": "TC = 125 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source Current (Diode Conduction)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 6.6,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Current",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "L = 0.1 mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.6,+ "conditions": "TC = 125 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient, PCB Mount",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 130,+ "conditions": "PCB mount",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Foot (Drain)",+ "symbol": "RthJF",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 75,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2.5,+ "typ": 3,+ "max": 3.5,+ "conditions": "VDS = VGS, ID = 250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ± 20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 0 V, VDS = 100 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VGS = 0 V, VDS = 100 V, TJ = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "VGS = 0 V, VDS = 100 V, TJ = 175 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": 5,+ "typ": null,+ "max": null,+ "conditions": "VGS = 10 V, VDS ≥ 5 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.24,+ "max": 0.3,+ "conditions": "VGS = 10 V, ID = 1.5 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.552,+ "conditions": "VGS = 10 V, ID = 1.5 A, TJ = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.72,+ "conditions": "VGS = 10 V, ID = 1.5 A, TJ = 175 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": 2.9,+ "typ": 5.8,+ "max": 8.7,+ "conditions": "f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2.3,+ "max": 3.4,+ "conditions": "VGS = 10 V, VDS = 50 V, ID = 1.5 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 5,+ "max": 6.9,+ "conditions": "VDD = 50 V, RL = 33, ID ≅ 1.5 A, VGEN = 10 V, Rg = 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 18,+ "max": 24,+ "conditions": "VDD = 50 V, RL = 33, ID ≅ 1.5 A, VGEN = 10 V, Rg = 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 17,+ "max": 23,+ "conditions": "VDD = 50 V, RL = 33, ID ≅ 1.5 A, VGEN = 10 V, Rg = 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 8,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.8,+ "max": 1.2,+ "conditions": "IF = 1.5 A, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 3,+ "max": null,+ "conditions": "VDS = 15 V, ID = 1.5 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 152,+ "max": null,+ "conditions": "VGS = 0 V, VDS = 50 V, f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 28,+ "max": null,+ "conditions": "VGS = 0 V, VDS = 50 V, f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 12,+ "max": null,+ "conditions": "VGS = 0 V, VDS = 50 V, f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 0.7,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Drain Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 1.1,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 79,+ "max": null,+ "conditions": "VDD = 50 V, RL = 33, ID ≅ 1.5 A, VGEN = 10 V, Rg = 1",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -190,4 +641,4 @@ "visibility": { "public": true }-}+}