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SQ2398ES-T1_GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSQ2398ES-T1_GE3
Vishay Intertech · MOSFETs · SOT-23
SQ2398ES-T1_GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage VGS is limited to ±20 V per the absolute maximum ratings. |
| 2 | S | passive | Source of the N-channel MOSFET; continuous source (diode conduction) current IS is rated at 2.5 A. |
| 3 | D | passive | Drain of the N-channel MOSFET; drain-source voltage VDS is rated at 100 V, and junction-to-foot (drain) thermal resistance RthJF is 75 °C/W. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 1.6 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 0.9 | A | TC = 125 °C | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | 2.5 | A | 1 | |||
| Pulsed Drain Current | IDM | 6.6 | A | 1 | |||
| Single Pulse Avalanche Current | IAS | 5 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 1.2 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 2 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 0.6 | W | TC = 125 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient, PCB Mount | RthJA | 130 | °C/W | PCB mount | 1 | ||
| Junction-to-Foot (Drain) | RthJF | 75 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | VDS | 100 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2.5 | 3 | 3.5 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS = 0 V, VDS = 100 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | μA | VGS = 0 V, VDS = 100 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 150 | μA | VGS = 0 V, VDS = 100 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | 5 | A | VGS = 10 V, VDS ≥ 5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.24 | 0.3 | Ω | VGS = 10 V, ID = 1.5 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.552 | Ω | VGS = 10 V, ID = 1.5 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.72 | Ω | VGS = 10 V, ID = 1.5 A, TJ = 175 °C | 2 | ||
| Gate Resistance | Rg | 2.9 | 5.8 | 8.7 | Ω | f = 1 MHz | 2 |
| Total Gate Charge | Qg | 2.3 | 3.4 | nC | VGS = 10 V, VDS = 50 V, ID = 1.5 A | 2 | |
| Turn-On Delay Time | td(on) | 5 | 6.9 | ns | VDD = 50 V, RL = 33, ID ≅ 1.5 A, VGEN = 10 V, Rg = 1 | 2 | |
| Rise Time | tr | 18 | 24 | ns | VDD = 50 V, RL = 33, ID ≅ 1.5 A, VGEN = 10 V, Rg = 1 | 2 | |
| Fall Time | tf | 17 | 23 | ns | VDD = 50 V, RL = 33, ID ≅ 1.5 A, VGEN = 10 V, Rg = 1 | 2 | |
| Pulsed Current | ISM | 8 | A | 2 | |||
| Forward Voltage | VSD | 0.8 | 1.2 | V | IF = 1.5 A, VGS = 0 V | 2 | |
| Forward Transconductance | gfs | 3 | S | VDS = 15 V, ID = 1.5 A | 2 | ||
| Input Capacitance | Ciss | 152 | pF | VGS = 0 V, VDS = 50 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 28 | pF | VGS = 0 V, VDS = 50 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 12 | pF | VGS = 0 V, VDS = 50 V, f = 1 MHz | 2 | ||
| Gate-Source Charge | Qgs | 0.7 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 1.1 | nC | 2 | |||
| Turn-Off Delay Time | td(off) | 79 | ns | VDD = 50 V, RL = 33, ID ≅ 1.5 A, VGEN = 10 V, Rg = 1 | 2 |
CAD (KiCad official)
- Symbol:
SQ2398ES-T1_GE3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
sq2398es-t1-ge3-etched.step/sq2398es-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sq2398es-t1-ge3.step/sq2398es-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
d5cb5bd0c03f5ac0, retrieved 2026-10-10, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).