component

SQ2389ES-T1_GE3

Public Made by Adom

by adom

Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorssq2389es-t1_ge3factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 22d ago
viewers sq2389es-t1-ge3: viewers · Ray 22d ago
package.json Publish 0.1.0 · Ray 22d ago
page.json sq2389es-t1-ge3: specified limits as data (metadata.characteristics, 34 rows from the datasheet) · Ray 16d ago
README.md sq2389es-t1-ge3: specified limits as data (metadata.characteristics, 34 rows from the datasheet) · Ray 16d ago
sq2389es-t1-ge3-etched.glb sq2389es-t1-ge3: factory component page (tier=lcsc) · Ray 22d ago
sq2389es-t1-ge3-etched.step sq2389es-t1-ge3: factory component page (tier=lcsc) · Ray 22d ago
sq2389es-t1-ge3-hero.glb sq2389es-t1-ge3: hero GLB from the etched model (keeps the MPN mark) · Ray 22d ago
sq2389es-t1-ge3-hero.overlay.json Publish 0.1.0 · Ray 22d ago
sq2389es-t1-ge3.glb Publish 0.1.0 · Ray 22d ago
sq2389es-t1-ge3.kicad_mod Publish 0.1.0 · Ray 22d ago
sq2389es-t1-ge3.kicad_sym Publish 0.1.0 · Ray 22d ago
sq2389es-t1-ge3.lbr Publish 0.1.0 · Ray 22d ago
sq2389es-t1-ge3.step Publish 0.1.0 · Ray 22d ago

SQ2389ES-T1_GE3

Vishay Intertech · MOSFETs · SOT-23

SQ2389ES-T1_GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; gate-source voltage is rated ±20 V (absolute maximum), and the gate-source threshold is -1.5 V to -2.5 V at ID = -250 µA.
2 S passive Source of the MOSFET; the continuous source (diode conduction) current is rated IS = -3.6 A, with a pulsed source current ISM of -10 A.
3 D passive Drain of the MOSFET, which also provides the thermal path from the package to the PCB; continuous drain current is -4.1 A at TC = 25 °C with a drain-source voltage of -40 V.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -4.1 A TC = 25 °C 1
Continuous Drain Current ID -2.4 A TC = 125 °C 1
Continuous Source Current (Diode Conduction) IS -3.6 A 1
Pulsed Drain Current IDM -16 A 1
Single Pulse Avalanche Current IAS -12 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 7.2 mJ 1
Maximum Power Dissipation PD 3 W TC = 25 °C 1
Maximum Power Dissipation PD 1 W TC = 125 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient Thermal Resistance RthJA 166 °C/W PCB Mount 1
Junction-to-Foot (Drain) Thermal Resistance RthJF 50 °C/W 1
Drain-Source Breakdown Voltage VDS -40 V VGS = 0 V, ID = -250 μA 2
Gate-Source Threshold Voltage VGS(th) -1.5 -2 -2.5 V VDS = VGS, ID = -250 μA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 μA VGS = 0 V VDS = -40 V 2
Zero Gate Voltage Drain Current IDSS -50 μA VGS = 0 V VDS = -40 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS -150 μA VGS = 0 V VDS = -40 V, TJ = 175 °C 2
On-State Drain Current ID(on) -10 A VGS = -10 V VDS ≤ -5 V 2
Drain-Source On-State Resistance RDS(on) 0.084 0.094 Ω VGS = -10 V ID = -3 A 2
Drain-Source On-State Resistance RDS(on) 0.144 Ω VGS = -10 V ID = -3 A, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.169 Ω VGS = -10 V ID = -3 A, TJ = 175 °C 2
Drain-Source On-State Resistance RDS(on) 0.14 0.188 Ω VGS = -4.5 V ID = -3 A 2
Input Capacitance Ciss 360 420 pF VGS = 0 V VDS = -20 V, f = 1 MHz 2
Output Capacitance Coss 80 100 pF VGS = 0 V VDS = -20 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 42 54 pF VGS = 0 V VDS = -20 V, f = 1 MHz 2
Total Gate Charge Qg 8.2 12 nC VGS = -10 V VDS = -20 V, ID = -3 A 2
Gate Resistance Rg 3.1 4.1 7 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 7 10 ns VDD = -20 V, RL = 6.7 Ω ID ≅ -3 A, VGEN = -10 V, Rg = 1 Ω 2
Rise Time tr 12 16 ns 2
Turn-Off Delay Time td(off) 16 20 ns 2
Pulsed Current (Source-Drain Diode) ISM -10 A 2
Forward Voltage VSD -0.8 -1.2 V IF = -1.5 A, VGS = 0 V 2

CAD (KiCad official)

  • Symbol: SQ2389ES-T1_GE3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: sq2389es-t1-ge3-etched.step / sq2389es-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sq2389es-t1-ge3.step / sq2389es-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (11 pp, sha256 2e95835883e00be9, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF