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Contents

README

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SQ2362ES-T1_GE3-HXY

HXY MOSFET · MOSFETs · SOT-23

SQ2362ES-T1_GE3-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; gate-source voltage limit is ±20 V with a threshold of 1 V to 2.5 V at ID=250 µA.
2 D passive Drain of the N-channel MOSFET; drain-source voltage rating is 60 V with continuous drain current of 5 A (30 A pulsed).
3 S passive Source of the N-channel MOSFET; the body diode conducts up to 5 A continuous (30 A pulsed) from source to drain.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1 1.6 2.5 V VDS=VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(on) 40 49 mΩ VGS=10V, ID=5A 2
Static Drain-Source On-Resistance RDS(on) 45 63 mΩ VGS=4.5V, ID=2A 2
Maximum Continuous Drain to Source Diode Forward Current IS 5 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 30 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=15A 2
Drain-Source Voltage VDS 60 V TA=25℃ 1
Gate-Source Voltage VGS -20 20 V TA=25℃ 1
Drain Current-Continuous ID 5 A TA=25℃ 1
Drain Current-Pulsed IDM 30 A TA=25℃, Note 1 1
Maximum Power Dissipation PD 3 W TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 73 ℃/W Note 2 1
Input Capacitance Ciss 825 pF VDS=25V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 49 pF VDS=25V, VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 41 pF VDS=25V, VGS=0V, f=1.0MHz 2
Total Gate Charge Qg 14 nC VDS=30V, ID=4.5A, VGS=10V 2
Gate-Source Charge Qgs 2.9 nC VDS=30V, ID=4.5A, VGS=10V 2
Gate-Drain (Miller) Charge Qgd 5.2 nC VDS=30V, ID=4.5A, VGS=10V 2
Turn-on Delay Time td(on) 5 ns VDS=30V, ID=2A, RL=6.7Ω, RG=3Ω, VGS=10V 2
Turn-on Rise Time tr 2.6 ns VDS=30V, ID=2A, RL=6.7Ω, RG=3Ω, VGS=10V 2
Turn-off Delay Time td(off) 16.1 ns VDS=30V, ID=2A, RL=6.7Ω, RG=3Ω, VGS=10V 2
Turn-off Fall Time tf 2.3 ns VDS=30V, ID=2A, RL=6.7Ω, RG=3Ω, VGS=10V 2
Body Diode Reverse Recovery Time trr 35 ns TJ=25℃, IF=15A, dI/dt=100A/μs 2
Body Diode Reverse Recovery Charge Qrr 53 nC TJ=25℃, IF=15A, dI/dt=100A/μs 2

CAD (KiCad official)

  • Symbol: SQ2362ES-T1_GE3-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: sq2362es-t1-ge3-hxy-etched.step / sq2362es-t1-ge3-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sq2362es-t1-ge3-hxy.step / sq2362es-t1-ge3-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 a54185c224afda9c, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF