component
SQ2361AEES-T1_BE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SQ2361AEES-T1_BE3
Vishay Intertech · MOSFETs · SOT-23
SQ2361AEES-T1_BE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET; gate-source voltage is rated at ±20 V in the absolute maximum ratings. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; continuous source (diode conduction) current IS is rated at -2.5 A. |
| 3 | D | passive | Drain terminal of the P-channel MOSFET; drain-source voltage is rated at -60 V with continuous drain current ID of -2.8 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | -60 | V | 1 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current | ID | -2.8 | A | TC = 25 °C | 1 | ||
| Continuous drain current | ID | -1.6 | A | TC = 125 °C | 1 | ||
| Continuous source current (diode conduction) | IS | -2.5 | A | 1 | |||
| Pulsed drain current | IDM | -11 | A | 1 | |||
| Single pulse avalanche current | IAS | -13 | A | L = 0.1 mH | 1 | ||
| Single pulse avalanche energy | EAS | 8.4 | mJ | 1 | |||
| Maximum power dissipation | PD | 2 | W | TC = 25 °C | 1 | ||
| Maximum power dissipation | PD | 0.67 | W | TC = 125 °C | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-ambient thermal resistance (PCB mount) | RthJA | 175 | °C/W | PCB mount, 1" square FR4 PCB | 1 | ||
| Junction-to-foot (drain) thermal resistance | RthJF | 75 | °C/W | Junction-to-foot (drain) | 1 | ||
| Drain-source breakdown voltage | VDS | -60 | V | VGS = 0 V, ID = -250 μA | 2 | ||
| Gate-source threshold voltage | VGS(th) | -1.5 | -2.5 | V | VDS = VGS, ID = -250 μA | 2 | |
| Gate-source leakage | IGSS | -30 | 30 | mA | VDS = 0 V, VGS = ±20 V | 2 | |
| Gate-source leakage | IGSS | -2 | 2 | μA | VDS = 0 V, VGS = ±8 V | 2 | |
| Zero gate voltage drain current | IDSS | -1 | μA | VGS = 0 V, VDS = -60 V | 2 | ||
| Zero gate voltage drain current | IDSS | -50 | μA | VGS = 0 V, VDS = -60 V, TJ = 125 °C | 2 | ||
| Zero gate voltage drain current | IDSS | -150 | μA | VGS = 0 V, VDS = -60 V, TJ = 175 °C | 2 | ||
| On-state drain current | ID(on) | -10 | A | VGS = -10 V, VDS ≤ -5 V (as printed: VDS -5 V) | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.13 | 0.17 | Ω | VGS = -10 V, ID = -2.4 A | 2 | |
| Drain-source on-state resistance | RDS(on) | 0.3 | Ω | VGS = -10 V, ID = -2.4 A, TJ = 125 °C | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.315 | Ω | VGS = -10 V, ID = -2.4 A, TJ = 175 °C | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.18 | 0.23 | Ω | VGS = -4.5 V, ID = -1.8 A | 2 | |
| Input capacitance | Ciss | 415 | 620 | pF | VGS = 0 V, VDS = -30 V, f = 1 MHz | 2 | |
| Output capacitance | Coss | 55 | 80 | pF | VGS = 0 V, VDS = -30 V, f = 1 MHz | 2 | |
| Reverse transfer capacitance | Crss | 32 | 45 | pF | VGS = 0 V, VDS = -30 V, f = 1 MHz | 2 | |
| Total gate charge | Qg | 10 | 15 | nC | VGS = -10 V, VDS = -30 V, ID = -6 A | 2 | |
| Turn-on delay time | td(on) | 9 | 12 | ns | VDD = -30 V, RL = 20, ID ≅ -1.5 A, VGEN = -10 V, Rg = 1 (as printed) | 2 | |
| Rise time | tr | 9 | 12 | ns | VDD = -30 V, RL = 20, ID ≅ -1.5 A, VGEN = -10 V, Rg = 1 (as printed) | 2 | |
| Turn-off delay time | td(off) | 24 | 30 | ns | VDD = -30 V, RL = 20, ID ≅ -1.5 A, VGEN = -10 V, Rg = 1 (as printed) | 2 | |
| Pulsed current (source-drain diode) | ISM | -13 | A | 2 | |||
| Forward voltage | VSD | -0.8 | -1.2 | V | IF = -1.5 A, VGS = 0 V | 2 |
CAD (KiCad official)
- Symbol:
SQ2361AEES-T1_BE3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
sq2361aees-t1-be3-etched.step/sq2361aees-t1-be3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sq2361aees-t1-be3.step/sq2361aees-t1-be3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
c62070eb51bd8fb5, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SQ2361AEES-T1_BE3
**Vishay Intertech** · MOSFETs · SOT-23
SQ2361AEES-T1_BE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET; gate-source voltage is rated at ±20 V in the absolute maximum ratings. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; continuous source (diode conduction) current IS is rated at -2.5 A. |
| 3 | D | passive | Drain terminal of the P-channel MOSFET; drain-source voltage is rated at -60 V with continuous drain current ID of -2.8 A at TC = 25 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | | | -60 | V | | 1 |
| Gate-source voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous drain current | ID | | | -2.8 | A | TC = 25 °C | 1 |
| Continuous drain current | ID | | | -1.6 | A | TC = 125 °C | 1 |
| Continuous source current (diode conduction) | IS | | | -2.5 | A | | 1 |
| Pulsed drain current | IDM | | | -11 | A | | 1 |
| Single pulse avalanche current | IAS | | | -13 | A | L = 0.1 mH | 1 |
| Single pulse avalanche energy | EAS | | | 8.4 | mJ | | 1 |
| Maximum power dissipation | PD | | | 2 | W | TC = 25 °C | 1 |
| Maximum power dissipation | PD | | | 0.67 | W | TC = 125 °C | 1 |
| Operating junction and storage temperature range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Junction-to-ambient thermal resistance (PCB mount) | RthJA | | | 175 | °C/W | PCB mount, 1" square FR4 PCB | 1 |
| Junction-to-foot (drain) thermal resistance | RthJF | | | 75 | °C/W | Junction-to-foot (drain) | 1 |
| Drain-source breakdown voltage | VDS | -60 | | | V | VGS = 0 V, ID = -250 μA | 2 |
| Gate-source threshold voltage | VGS(th) | -1.5 | | -2.5 | V | VDS = VGS, ID = -250 μA | 2 |
| Gate-source leakage | IGSS | -30 | | 30 | mA | VDS = 0 V, VGS = ±20 V | 2 |
| Gate-source leakage | IGSS | -2 | | 2 | μA | VDS = 0 V, VGS = ±8 V | 2 |
| Zero gate voltage drain current | IDSS | | | -1 | μA | VGS = 0 V, VDS = -60 V | 2 |
| Zero gate voltage drain current | IDSS | | | -50 | μA | VGS = 0 V, VDS = -60 V, TJ = 125 °C | 2 |
| Zero gate voltage drain current | IDSS | | | -150 | μA | VGS = 0 V, VDS = -60 V, TJ = 175 °C | 2 |
| On-state drain current | ID(on) | -10 | | | A | VGS = -10 V, VDS ≤ -5 V (as printed: VDS -5 V) | 2 |
| Drain-source on-state resistance | RDS(on) | | 0.13 | 0.17 | Ω | VGS = -10 V, ID = -2.4 A | 2 |
| Drain-source on-state resistance | RDS(on) | | | 0.3 | Ω | VGS = -10 V, ID = -2.4 A, TJ = 125 °C | 2 |
| Drain-source on-state resistance | RDS(on) | | | 0.315 | Ω | VGS = -10 V, ID = -2.4 A, TJ = 175 °C | 2 |
| Drain-source on-state resistance | RDS(on) | | 0.18 | 0.23 | Ω | VGS = -4.5 V, ID = -1.8 A | 2 |
| Input capacitance | Ciss | | 415 | 620 | pF | VGS = 0 V, VDS = -30 V, f = 1 MHz | 2 |
| Output capacitance | Coss | | 55 | 80 | pF | VGS = 0 V, VDS = -30 V, f = 1 MHz | 2 |
| Reverse transfer capacitance | Crss | | 32 | 45 | pF | VGS = 0 V, VDS = -30 V, f = 1 MHz | 2 |
| Total gate charge | Qg | | 10 | 15 | nC | VGS = -10 V, VDS = -30 V, ID = -6 A | 2 |
| Turn-on delay time | td(on) | | 9 | 12 | ns | VDD = -30 V, RL = 20, ID ≅ -1.5 A, VGEN = -10 V, Rg = 1 (as printed) | 2 |
| Rise time | tr | | 9 | 12 | ns | VDD = -30 V, RL = 20, ID ≅ -1.5 A, VGEN = -10 V, Rg = 1 (as printed) | 2 |
| Turn-off delay time | td(off) | | 24 | 30 | ns | VDD = -30 V, RL = 20, ID ≅ -1.5 A, VGEN = -10 V, Rg = 1 (as printed) | 2 |
| Pulsed current (source-drain diode) | ISM | | | -13 | A | | 2 |
| Forward voltage | VSD | | -0.8 | -1.2 | V | IF = -1.5 A, VGS = 0 V | 2 |
## CAD (KiCad official)
- Symbol: `SQ2361AEES-T1_BE3`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `sq2361aees-t1-be3-etched.step` / `sq2361aees-t1-be3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sq2361aees-t1-be3.step` / `sq2361aees-t1-be3.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590905728918380544) (9 pp, sha256 `c62070eb51bd8fb5`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sq2361aees-t1-be3-datasheet.pdf)