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SQ2348CES-T1_GE3
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Vishay Intertech MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SQ2348CES-T1_GE3
Vishay Intertech · MOSFETs · SOT-23(TO-236)
SQ2348CES-T1_GE3 from Vishay Intertech, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with gate-source voltage VGS rated at ±20 V. |
| 2 | S | passive | Source of the N-channel MOSFET, with continuous source current (diode conduction) IS rated at 3.8 A. |
| 3 | D | passive | Drain of the N-channel MOSFET, with drain-source voltage VDS rated at 30 V and continuous drain current ID of 8 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 30 | V | 1 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current | ID | 8 | A | TC = 25 °C | 1 | ||
| Continuous drain current | ID | 5.3 | A | TC = 125 °C | 1 | ||
| Continuous source current (diode conduction) | IS | 3.8 | A | 1 | |||
| Pulsed drain current | IDM | 32 | A | Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % | 1 | ||
| Single pulse avalanche current | IAS | 15.5 | A | L = 0.1 mH | 1 | ||
| Single pulse avalanche energy | EAS | 12 | mJ | 1 | |||
| Maximum power dissipation | PD | 3 | W | TC = 25 °C | 1 | ||
| Maximum power dissipation | PD | 1 | W | TC = 125 °C | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-ambient PCB mount | RthJA | 166 | °C/W | PCB mount, 1 in square PCB (FR4) | 1 | ||
| Junction-to-foot (drain) | RthJF | 50 | °C/W | 1 | |||
| Drain-source breakdown voltage | VDS | 30 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-source threshold voltage | VGS(th) | 1.5 | 2 | 2.5 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-source leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero gate voltage drain current | IDSS | 1 | μA | VGS = 0 V, VDS = 30 V | 2 | ||
| Zero gate voltage drain current | IDSS | 50 | μA | VGS = 0 V, VDS = 30 V, TJ = 125 °C | 2 | ||
| Zero gate voltage drain current | IDSS | 150 | μA | VGS = 0 V, VDS = 30 V, TJ = 175 °C | 2 | ||
| On-state drain current | ID(on) | 10 | A | VGS = 10 V, VDS ≥ 5 V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.02 | 0.024 | Ω | VGS = 10 V, ID = 12 A | 2 | |
| Drain-source on-state resistance | RDS(on) | 0.036 | Ω | VGS = 10 V, ID = 12 A, TJ = 125 °C | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.042 | Ω | VGS = 10 V, ID = 12 A, TJ = 175 °C | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.026 | 0.032 | Ω | VGS = 4.5 V, ID = 8 A | 2 | |
| Input capacitance | Ciss | 450 | 540 | pF | VGS = 0 V, VDS = 15 V, f = 1 MHz | 2 | |
| Output capacitance | Coss | 95 | 125 | pF | VGS = 0 V, VDS = 15 V, f = 1 MHz | 2 | |
| Reverse transfer capacitance | Crss | 39 | 50 | pF | VGS = 0 V, VDS = 15 V, f = 1 MHz | 2 | |
| Total gate charge | Qg | 8.15 | 14.5 | nC | VGS = 10 V, VDS = 15 V, ID = 5.5 A | 2 | |
| Gate resistance | Rg | 8.65 | 13 | 27 | Ω | f = 1 MHz | 2 |
| Rise time | tr | 4 | 12 | ns | VDD = 15 V, RL = 3.4 Ω, ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-off delay time | td(off) | 18 | 32 | ns | VDD = 15 V, RL = 3.4 Ω, ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Pulsed current | ISM | 32 | A | 2 | |||
| Forward voltage | VSD | 0.81 | 1.2 | V | IF = 3.5 A, VGS = 0 V | 2 | |
| Body diode reverse recovery time | trr | 10 | 20 | ns | IF = 4 A, di/dt = 100A/us | 2 | |
| Body diode reverse recovery charge | Qrr | 5 | 10 | nC | IF = 4 A, di/dt = 100A/us | 2 |
CAD (KiCad official)
- Symbol:
SQ2348CES-T1_GE3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
sq2348ces-t1-ge3-etched.step/sq2348ces-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sq2348ces-t1-ge3.step/sq2348ces-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
b594330ae802860e, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SQ2348CES-T1_GE3
**Vishay Intertech** · MOSFETs · SOT-23(TO-236)
SQ2348CES-T1_GE3 from Vishay Intertech, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with gate-source voltage VGS rated at ±20 V. |
| 2 | S | passive | Source of the N-channel MOSFET, with continuous source current (diode conduction) IS rated at 3.8 A. |
| 3 | D | passive | Drain of the N-channel MOSFET, with drain-source voltage VDS rated at 30 V and continuous drain current ID of 8 A at TC = 25 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | | | 30 | V | | 1 |
| Gate-source voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous drain current | ID | | | 8 | A | TC = 25 °C | 1 |
| Continuous drain current | ID | | | 5.3 | A | TC = 125 °C | 1 |
| Continuous source current (diode conduction) | IS | | | 3.8 | A | | 1 |
| Pulsed drain current | IDM | | | 32 | A | Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % | 1 |
| Single pulse avalanche current | IAS | | | 15.5 | A | L = 0.1 mH | 1 |
| Single pulse avalanche energy | EAS | | | 12 | mJ | | 1 |
| Maximum power dissipation | PD | | | 3 | W | TC = 25 °C | 1 |
| Maximum power dissipation | PD | | | 1 | W | TC = 125 °C | 1 |
| Operating junction and storage temperature range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Junction-to-ambient PCB mount | RthJA | | | 166 | °C/W | PCB mount, 1 in square PCB (FR4) | 1 |
| Junction-to-foot (drain) | RthJF | | | 50 | °C/W | | 1 |
| Drain-source breakdown voltage | VDS | 30 | | | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-source threshold voltage | VGS(th) | 1.5 | 2 | 2.5 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-source leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero gate voltage drain current | IDSS | | | 1 | μA | VGS = 0 V, VDS = 30 V | 2 |
| Zero gate voltage drain current | IDSS | | | 50 | μA | VGS = 0 V, VDS = 30 V, TJ = 125 °C | 2 |
| Zero gate voltage drain current | IDSS | | | 150 | μA | VGS = 0 V, VDS = 30 V, TJ = 175 °C | 2 |
| On-state drain current | ID(on) | 10 | | | A | VGS = 10 V, VDS ≥ 5 V | 2 |
| Drain-source on-state resistance | RDS(on) | | 0.02 | 0.024 | Ω | VGS = 10 V, ID = 12 A | 2 |
| Drain-source on-state resistance | RDS(on) | | | 0.036 | Ω | VGS = 10 V, ID = 12 A, TJ = 125 °C | 2 |
| Drain-source on-state resistance | RDS(on) | | | 0.042 | Ω | VGS = 10 V, ID = 12 A, TJ = 175 °C | 2 |
| Drain-source on-state resistance | RDS(on) | | 0.026 | 0.032 | Ω | VGS = 4.5 V, ID = 8 A | 2 |
| Input capacitance | Ciss | | 450 | 540 | pF | VGS = 0 V, VDS = 15 V, f = 1 MHz | 2 |
| Output capacitance | Coss | | 95 | 125 | pF | VGS = 0 V, VDS = 15 V, f = 1 MHz | 2 |
| Reverse transfer capacitance | Crss | | 39 | 50 | pF | VGS = 0 V, VDS = 15 V, f = 1 MHz | 2 |
| Total gate charge | Qg | | 8.15 | 14.5 | nC | VGS = 10 V, VDS = 15 V, ID = 5.5 A | 2 |
| Gate resistance | Rg | 8.65 | 13 | 27 | Ω | f = 1 MHz | 2 |
| Rise time | tr | | 4 | 12 | ns | VDD = 15 V, RL = 3.4 Ω, ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-off delay time | td(off) | | 18 | 32 | ns | VDD = 15 V, RL = 3.4 Ω, ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Pulsed current | ISM | | | 32 | A | | 2 |
| Forward voltage | VSD | | 0.81 | 1.2 | V | IF = 3.5 A, VGS = 0 V | 2 |
| Body diode reverse recovery time | trr | | 10 | 20 | ns | IF = 4 A, di/dt = 100A/us | 2 |
| Body diode reverse recovery charge | Qrr | | 5 | 10 | nC | IF = 4 A, di/dt = 100A/us | 2 |
## CAD (KiCad official)
- Symbol: `SQ2348CES-T1_GE3`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files: `sq2348ces-t1-ge3-etched.step` / `sq2348ces-t1-ge3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sq2348ces-t1-ge3.step` / `sq2348ces-t1-ge3.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604377028305580032) (9 pp, sha256 `b594330ae802860e`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sq2348ces-t1-ge3-datasheet.pdf)