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SQ2325ES-T1_GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownSQ2325ES-T1_GE3
Vishay Intertech · MOSFETs · SOT-23
SQ2325ES-T1_GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET, with gate-source voltage limited to ±20 V (VGS) per the absolute maximum ratings. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, with continuous source (diode conduction) current IS rated at -3.7 A. |
| 3 | D | passive | Drain terminal of the P-channel MOSFET, rated for drain-source voltage VDS of -150 V and continuous drain current ID of -0.84 A at TC = 25 °C, and also providing the thermal path from the package to the PCB (AN807). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -150 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -0.84 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | -0.48 | A | TC = 125 °C | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | -3.7 | A | 1 | |||
| Pulsed Drain Current | IDM | -2 | A | Pulse width ≤ 300 μs, duty cycle ≤ 2 % (note a) | 1 | ||
| Single Pulse Avalanche Current | IAS | 4.8 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 1.12 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 3 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1 | W | TC = 125 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 166 | °C/W | PCB mount (note b: 1 in square FR4 PCB) | 1 | ||
| Junction-to-Foot (Drain) Thermal Resistance | RthJF | 50 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | VDS | -150 | V | VGS = 0 V, ID = -250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -2.5 | -3 | -3.5 | V | VDS = VGS, ID = -250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VGS = 0 V, VDS = -150 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -50 | μA | VGS = 0 V, VDS = -150 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -150 | μA | VGS = 0 V, VDS = -150 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | -0.8 | A | VGS = -10 V, VDS 5 V (relation symbol not printed in extracted text) | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 1.3 | 1.77 | Ω | VGS = -10 V, ID = -0.5 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 3.4 | Ω | VGS = -10 V, ID = -0.5 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 4.4 | Ω | VGS = -10 V, ID = -0.5 A, TJ = 175 °C | 2 | ||
| Input Capacitance | Ciss | 200 | 250 | pF | VGS = 0 V, VDS = -50 V, f = 1 MHz | 2 | |
| Output Capacitance | Coss | 20 | 25 | pF | VGS = 0 V, VDS = -50 V, f = 1 MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 17 | 22 | pF | VGS = 0 V, VDS = -50 V, f = 1 MHz | 2 | |
| Total Gate Charge | Qg | 7.4 | 10 | nC | VGS = -10 V, VDS = -75 V, ID = -0.5 A | 2 | |
| Gate Resistance | Rg | 2.8 | 3.9 | 6.1 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 8 | 12 | ns | VDD = -75 V, RL = 150, ID -0.5 A, VGEN = -10 V, Rg = 1 | 2 | |
| Rise Time | tr | 14 | 18 | ns | VDD = -75 V, RL = 150, ID -0.5 A, VGEN = -10 V, Rg = 1 | 2 | |
| Turn-Off Delay Time | td(off) | 15 | 20 | ns | VDD = -75 V, RL = 150, ID -0.5 A, VGEN = -10 V, Rg = 1 | 2 | |
| Fall Time | tf | 10 | 14 | ns | VDD = -75 V, RL = 150, ID -0.5 A, VGEN = -10 V, Rg = 1 | 2 | |
| Pulsed Current | ISM | -2 | A | 2 | |||
| Forward Voltage | VSD | -0.8 | -1.2 | V | IF = -0.5 A, VGS = 0 V | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | pattern, a plane of copper overlies the drain pin and provides | 9 |
CAD (KiCad official)
- Symbol:
SQ2325ES-T1_GE3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
sq2325es-t1-ge3-etched.step/sq2325es-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sq2325es-t1-ge3.step/sq2325es-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (11 pp, sha256
445999fd0cca5c4d, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).