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SQ2319ADS-T1_GE3

Public Made by Adom

by adom

Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SQ2319ADS-T1_GE3

Vishay Intertech · MOSFETs · SOT-23

SQ2319ADS-T1_GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage VGS is rated ±20 V.
2 S passive Source terminal; continuous source current (diode conduction) IS is rated -2.2 A.
3 D passive Drain terminal; drain-source voltage VDS is rated -40 V and continuous drain current ID is -4.6 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -4.6 A TC = 25 °C 1
Continuous Drain Current ID -2 A TC = 125 °C 1
Continuous Source Current (Diode Conduction) IS -2.2 A 1
Pulsed Drain Current IDM -18 A 1
Single Pulse Avalanche Current IAS -13 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 8.4 mJ 1
Maximum Power Dissipation PD 2.5 W TC = 25 °C 1
Maximum Power Dissipation PD 0.5 W TC = 125 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance RthJA 166 °C/W PCB Mount 1
Junction-to-Foot (Drain) Thermal Resistance RthJF 50 °C/W 1
Drain-Source Breakdown Voltage VDS -40 V VGS = 0, ID = -250 μA 2
Gate-Source Threshold Voltage VGS(th) -1.5 -2 -2.5 V VDS = VGS, ID = -250 μA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 μA VGS = 0 V, VDS = -40 V 2
Zero Gate Voltage Drain Current IDSS -50 μA VGS = 0 V, VDS = -40 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS -150 μA VGS = 0 V, VDS = -40 V, TJ = 150 °C 2
On-State Drain Current ID(on) -10 A VGS = -10 V, VDS ≤ -5 V 2
Drain-Source On-State Resistance RDS(on) 0.068 0.075 Ω VGS = -10 V, ID = -3 A 2
Drain-Source On-State Resistance RDS(on) 0.105 0.145 Ω VGS = -4.5 V, ID = -2.4 A 2
Input Capacitance Ciss 464 620 pF VGS = 0 V, VDS = -20 V, f = 1 MHz 2
Output Capacitance Coss 90 120 pF 2
Reverse Transfer Capacitance Crss 53 70 pF 2
Total Gate Charge Qg 10.5 16 nC VGS = -10 V, VDS = -20 V, ID = -3 A 2
Gate Resistance Rg 2.1 4.3 6.4 Ω f = 1 MHz 2
Rise Time tr 18 28 ns 2
Turn-Off Delay Time td(off) 17 27 ns 2
Fall Time tf 17 27 ns 2
Pulsed Current (Source-Drain Diode) ISM -18 A 2
Forward Voltage VSD -0.8 -1.2 V IF = -1.5 A, VGS = 0 2

CAD (KiCad official)

  • Symbol: SQ2319ADS-T1_GE3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: sq2319ads-t1-ge3-etched.step / sq2319ads-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sq2319ads-t1-ge3.step / sq2319ads-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 fc9586c939b3b1ba, retrieved 2026-10-21, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF