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SQ2318AES-T1_GE3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SQ2318AES-T1_GE3-VB
VBsemi Elec · MOSFETs · SOT-23(TO-236)
SQ2318AES-T1_GE3-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage limit is ±20 V, with VGS(th) of 1.5 V min to 2.5 V max at ID = 250 µA. |
| 2 | S | passive | Source of the N-channel MOSFET; continuous source current (diode conduction) is 3.8 A. |
| 3 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is 40 V max and continuous drain current is 4.8 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | TC = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25 °C | 1 | |
| Continuous Drain Current | ID | 4.8 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 3.6 | A | TC = 125 °C | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | 3.8 | A | TC = 25 °C | 1 | ||
| Single Pulse Avalanche Current | IAS | 13 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 8 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 3 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1 | W | TC = 125 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 166 | °C/W | PCB mount | 1 | ||
| Junction-to-Foot (Drain) Thermal Resistance | RthJF | 50 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | VDS | 40 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1.5 | 2 | 2.5 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS = 0 V, VDS = 40 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | μA | VGS = 0 V, VDS = 40 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 150 | μA | VGS = 0 V, VDS = 40 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | 10 | A | VGS = 10 V, VDS ≥ 5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.035 | Ω | VGS = 10 V, ID = 3.9 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.045 | Ω | VGS = 10 V, ID = 3.9 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.065 | Ω | VGS = 10 V, ID = 3.9 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.04 | Ω | VGS = 4.5 V, ID = 3.3 A | 2 | ||
| Forward Transconductance | gfs | 30 | S | VDS = 15 V, ID = 3.9 A | 2 | ||
| Input Capacitance | Ciss | 442 | 553 | pF | VGS = 0 V, VDS = 20 V, f = 1 MHz | 2 | |
| Output Capacitance | Coss | 79 | 99 | pF | VGS = 0 V, VDS = 20 V, f = 1 MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 37 | 46 | pF | VGS = 0 V, VDS = 20 V, f = 1 MHz | 2 | |
| Gate-Source Charge | Qgs | 1.4 | nC | VGS = 10 V, VDS = 20 V, ID = 3.9 A | 2 | ||
| Gate-Drain Charge | Qgd | 1.6 | nC | VGS = 10 V, VDS = 20 V, ID = 3.9 A | 2 | ||
| Gate Resistance | Rg | 1.5 | 3 | 4.5 | Ω | f = 1 MHz | 2 |
| Rise Time | tr | 8.4 | 13 | ns | VDD = 20 V, RL = 20 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 12 | 18 | ns | VDD = 20 V, RL = 20 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 5.7 | 8.5 | ns | VDD = 20 V, RL = 20 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Pulsed Source Current | ISM | 32 | A | 2 | |||
| Forward Voltage | VSD | 0.8 | 1.2 | V | IF = 5.4 A, VGS = 0 V | 2 |
CAD (KiCad official)
- Symbol:
SQ2318AES-T1_GE3-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
sq2318aes-t1-ge3-vb-etched.step/sq2318aes-t1-ge3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sq2318aes-t1-ge3-vb.step/sq2318aes-t1-ge3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
a2e55aee690d5ebf, retrieved 2026-10-24, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SQ2318AES-T1_GE3-VB
**VBsemi Elec** · MOSFETs · SOT-23(TO-236)
SQ2318AES-T1_GE3-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage limit is ±20 V, with VGS(th) of 1.5 V min to 2.5 V max at ID = 250 µA. |
| 2 | S | passive | Source of the N-channel MOSFET; continuous source current (diode conduction) is 3.8 A. |
| 3 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is 40 V max and continuous drain current is 4.8 A at TC = 25 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 40 | V | TC = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TC = 25 °C | 1 |
| Continuous Drain Current | ID | | | 4.8 | A | TC = 25 °C | 1 |
| Continuous Drain Current | ID | | | 3.6 | A | TC = 125 °C | 1 |
| Continuous Source Current (Diode Conduction) | IS | | | 3.8 | A | TC = 25 °C | 1 |
| Single Pulse Avalanche Current | IAS | | | 13 | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Energy | EAS | | | 8 | mJ | L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD | | | 3 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 1 | W | TC = 125 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Junction-to-Ambient Thermal Resistance | RthJA | | | 166 | °C/W | PCB mount | 1 |
| Junction-to-Foot (Drain) Thermal Resistance | RthJF | | | 50 | °C/W | | 1 |
| Drain-Source Breakdown Voltage | VDS | 40 | | | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1.5 | 2 | 2.5 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VGS = 0 V, VDS = 40 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 50 | μA | VGS = 0 V, VDS = 40 V, TJ = 125 °C | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 150 | μA | VGS = 0 V, VDS = 40 V, TJ = 175 °C | 2 |
| On-State Drain Current | ID(on) | 10 | | | A | VGS = 10 V, VDS ≥ 5 V | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.035 | | Ω | VGS = 10 V, ID = 3.9 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.045 | | Ω | VGS = 10 V, ID = 3.9 A, TJ = 125 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.065 | | Ω | VGS = 10 V, ID = 3.9 A, TJ = 175 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.04 | | Ω | VGS = 4.5 V, ID = 3.3 A | 2 |
| Forward Transconductance | gfs | | 30 | | S | VDS = 15 V, ID = 3.9 A | 2 |
| Input Capacitance | Ciss | | 442 | 553 | pF | VGS = 0 V, VDS = 20 V, f = 1 MHz | 2 |
| Output Capacitance | Coss | | 79 | 99 | pF | VGS = 0 V, VDS = 20 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 37 | 46 | pF | VGS = 0 V, VDS = 20 V, f = 1 MHz | 2 |
| Gate-Source Charge | Qgs | | 1.4 | | nC | VGS = 10 V, VDS = 20 V, ID = 3.9 A | 2 |
| Gate-Drain Charge | Qgd | | 1.6 | | nC | VGS = 10 V, VDS = 20 V, ID = 3.9 A | 2 |
| Gate Resistance | Rg | 1.5 | 3 | 4.5 | Ω | f = 1 MHz | 2 |
| Rise Time | tr | | 8.4 | 13 | ns | VDD = 20 V, RL = 20 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 12 | 18 | ns | VDD = 20 V, RL = 20 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Fall Time | tf | | 5.7 | 8.5 | ns | VDD = 20 V, RL = 20 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Pulsed Source Current | ISM | | | 32 | A | | 2 |
| Forward Voltage | VSD | | 0.8 | 1.2 | V | IF = 5.4 A, VGS = 0 V | 2 |
## CAD (KiCad official)
- Symbol: `SQ2318AES-T1_GE3-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files: `sq2318aes-t1-ge3-vb-etched.step` / `sq2318aes-t1-ge3-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sq2318aes-t1-ge3-vb.step` / `sq2318aes-t1-ge3-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/sq2318aes-t1-ge3-vb-datasheet.pdf) (9 pp, sha256 `a2e55aee690d5ebf`, retrieved 2026-10-24, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sq2318aes-t1-ge3-vb-datasheet.pdf)