component
SQ2318AES-T1_BE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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sq2318aes-t1-be3: specified limits as data (metadata.characteristics, 35 rows from the datasheet)
2 files changed
+470−1
README.md+42@@ -21,6 +21,48 @@ SQ2318AES-T1_BE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source voltage | VDS | | | 40 | V | | 1 |+| Gate-source voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous drain current | ID | | | 8 | A | TC = 25 °C | 1 |+| Continuous drain current | ID | | | 4.6 | A | TC = 125 °C | 1 |+| Continuous source current (diode conduction) | IS | | | 3.8 | A | | 1 |+| Pulsed drain current | IDM | | | 32 | A | | 1 |+| Single pulse avalanche current | IAS | | | 13 | A | L = 0.1 mH | 1 |+| Single pulse avalanche energy | EAS | | | 8 | mJ | | 1 |+| Maximum power dissipation | PD | | | 3 | W | TC = 25 °C | 1 |+| Maximum power dissipation | PD | | | 1 | W | TC = 125 °C | 1 |+| Operating junction and storage temperature range | TJ, Tstg | -55 | | 175 | °C | | 1 |+| Junction-to-ambient PCB mount | RthJA | | | 166 | °C/W | PCB mount (see note b: 1" square PCB, FR4) | 1 |+| Junction-to-foot (drain) | RthJF | | | 50 | °C/W | | 1 |+| Drain-source breakdown voltage | VDS | 40 | | | V | VGS = 0 V, ID = 250 μA | 2 |+| Gate-source threshold voltage | VGS(th) | 1.5 | 2 | 2.5 | V | VDS = VGS, ID = 250 μA | 2 |+| Gate-source leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |+| Zero gate voltage drain current | IDSS | | | 1 | μA | VGS = 0 V, VDS = 40 V | 2 |+| Zero gate voltage drain current | IDSS | | | 50 | μA | VGS = 0 V, VDS = 40 V, TJ = 125 °C | 2 |+| Zero gate voltage drain current | IDSS | | | 150 | μA | VGS = 0 V, VDS = 40 V, TJ = 175 °C | 2 |+| On-state drain current | ID(on) | 10 | | | A | VGS = 10 V, VDS ≥ 5 V | 2 |+| Drain-source on-state resistance | RDS(on) | | 0.026 | 0.031 | Ω | VGS = 10 V, ID = 7.9 A | 2 |+| Drain-source on-state resistance | RDS(on) | | | 0.045 | Ω | VGS = 10 V, ID = 7.9 A, TJ = 125 °C | 2 |+| Drain-source on-state resistance | RDS(on) | | | 0.065 | Ω | VGS = 10 V, ID = 7.9 A, TJ = 175 °C | 2 |+| Drain-source on-state resistance | RDS(on) | | 0.03 | 0.036 | Ω | VGS = 4.5 V, ID = 7.3 A | 2 |+| Input capacitance | Ciss | | 442 | 553 | pF | VGS = 0 V, VDS = 20 V, f = 1 MHz | 2 |+| Output capacitance | Coss | | 79 | 99 | pF | VGS = 0 V, VDS = 20 V, f = 1 MHz | 2 |+| Reverse transfer capacitance | Crss | | 37 | 46 | pF | VGS = 0 V, VDS = 20 V, f = 1 MHz | 2 |+| Total gate charge | Qg | | 8.7 | 13 | nC | VGS = 10 V, VDS = 20 V, ID = 3.9 A | 2 |+| Gate resistance | Rg | 1.5 | 3 | 4.5 | Ω | f = 1 MHz | 2 |+| Turn-on delay time | td(on) | | 7.5 | 11 | ns | VDD = 20 V, RL = 20 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Rise time | tr | | 8.4 | 13 | ns | VDD = 20 V, RL = 20 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Turn-off delay time | td(off) | | 12 | 18 | ns | VDD = 20 V, RL = 20 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Fall time | tf | | 5.7 | 8.5 | ns | VDD = 20 V, RL = 20 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Pulsed current | ISM | | | 32 | A | | 2 |+| Forward voltage | VSD | | 0.8 | 1.2 | V | IF = 5.4 A, VGS = 0 V | 2 |+ ## CAD (KiCad official) - Symbol: `SQ2318AES-T1_BE3`
page.json+428−1@@ -151,6 +151,433 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "2f98a55d7bc91c32",+ "rows": [+ {+ "name": "Drain-source voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 8,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4.6,+ "conditions": "TC = 125 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous source current (diode conduction)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 3.8,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 32,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche current",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 13,+ "conditions": "L = 0.1 mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 8,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum power dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum power dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "TC = 125 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating junction and storage temperature range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-ambient PCB mount",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 166,+ "conditions": "PCB mount (see note b: 1\" square PCB, FR4)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-foot (drain)",+ "symbol": "RthJF",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": 40,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.5,+ "typ": 2,+ "max": 2.5,+ "conditions": "VDS = VGS, ID = 250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ± 20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 0 V, VDS = 40 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VGS = 0 V, VDS = 40 V, TJ = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "VGS = 0 V, VDS = 40 V, TJ = 175 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-state drain current",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": 10,+ "typ": null,+ "max": null,+ "conditions": "VGS = 10 V, VDS ≥ 5 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.026,+ "max": 0.031,+ "conditions": "VGS = 10 V, ID = 7.9 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.045,+ "conditions": "VGS = 10 V, ID = 7.9 A, TJ = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.065,+ "conditions": "VGS = 10 V, ID = 7.9 A, TJ = 175 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.03,+ "max": 0.036,+ "conditions": "VGS = 4.5 V, ID = 7.3 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 442,+ "max": 553,+ "conditions": "VGS = 0 V, VDS = 20 V, f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 79,+ "max": 99,+ "conditions": "VGS = 0 V, VDS = 20 V, f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 37,+ "max": 46,+ "conditions": "VGS = 0 V, VDS = 20 V, f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 8.7,+ "max": 13,+ "conditions": "VGS = 10 V, VDS = 20 V, ID = 3.9 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": 1.5,+ "typ": 3,+ "max": 4.5,+ "conditions": "f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time",+ "symbol": "td(on)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 7.5,+ "max": 11,+ "conditions": "VDD = 20 V, RL = 20 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise time",+ "symbol": "tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 8.4,+ "max": 13,+ "conditions": "VDD = 20 V, RL = 20 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-off delay time",+ "symbol": "td(off)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 12,+ "max": 18,+ "conditions": "VDD = 20 V, RL = 20 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall time",+ "symbol": "tf",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 5.7,+ "max": 8.5,+ "conditions": "VDD = 20 V, RL = 20 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 32,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.8,+ "max": 1.2,+ "conditions": "IF = 5.4 A, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -192,4 +619,4 @@ "visibility": { "public": true }-}+}