component
SQ2318AES-T1_BE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSQ2318AES-T1_BE3
Vishay Intertech · MOSFETs · SOT-23
SQ2318AES-T1_BE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is limited to ±20 V (VGS). |
| 2 | S | passive | Source of the N-channel MOSFET; continuous source (diode conduction) current IS is rated at 3.8 A. |
| 3 | D | passive | Drain of the N-channel MOSFET; drain-source voltage VDS is rated at 40 V with continuous drain current ID of 8 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 40 | V | 1 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current | ID | 8 | A | TC = 25 °C | 1 | ||
| Continuous drain current | ID | 4.6 | A | TC = 125 °C | 1 | ||
| Continuous source current (diode conduction) | IS | 3.8 | A | 1 | |||
| Pulsed drain current | IDM | 32 | A | 1 | |||
| Single pulse avalanche current | IAS | 13 | A | L = 0.1 mH | 1 | ||
| Single pulse avalanche energy | EAS | 8 | mJ | 1 | |||
| Maximum power dissipation | PD | 3 | W | TC = 25 °C | 1 | ||
| Maximum power dissipation | PD | 1 | W | TC = 125 °C | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-ambient PCB mount | RthJA | 166 | °C/W | PCB mount (see note b: 1" square PCB, FR4) | 1 | ||
| Junction-to-foot (drain) | RthJF | 50 | °C/W | 1 | |||
| Drain-source breakdown voltage | VDS | 40 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-source threshold voltage | VGS(th) | 1.5 | 2 | 2.5 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-source leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero gate voltage drain current | IDSS | 1 | μA | VGS = 0 V, VDS = 40 V | 2 | ||
| Zero gate voltage drain current | IDSS | 50 | μA | VGS = 0 V, VDS = 40 V, TJ = 125 °C | 2 | ||
| Zero gate voltage drain current | IDSS | 150 | μA | VGS = 0 V, VDS = 40 V, TJ = 175 °C | 2 | ||
| On-state drain current | ID(on) | 10 | A | VGS = 10 V, VDS ≥ 5 V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.026 | 0.031 | Ω | VGS = 10 V, ID = 7.9 A | 2 | |
| Drain-source on-state resistance | RDS(on) | 0.045 | Ω | VGS = 10 V, ID = 7.9 A, TJ = 125 °C | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.065 | Ω | VGS = 10 V, ID = 7.9 A, TJ = 175 °C | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.03 | 0.036 | Ω | VGS = 4.5 V, ID = 7.3 A | 2 | |
| Input capacitance | Ciss | 442 | 553 | pF | VGS = 0 V, VDS = 20 V, f = 1 MHz | 2 | |
| Output capacitance | Coss | 79 | 99 | pF | VGS = 0 V, VDS = 20 V, f = 1 MHz | 2 | |
| Reverse transfer capacitance | Crss | 37 | 46 | pF | VGS = 0 V, VDS = 20 V, f = 1 MHz | 2 | |
| Total gate charge | Qg | 8.7 | 13 | nC | VGS = 10 V, VDS = 20 V, ID = 3.9 A | 2 | |
| Gate resistance | Rg | 1.5 | 3 | 4.5 | Ω | f = 1 MHz | 2 |
| Turn-on delay time | td(on) | 7.5 | 11 | ns | VDD = 20 V, RL = 20 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Rise time | tr | 8.4 | 13 | ns | VDD = 20 V, RL = 20 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-off delay time | td(off) | 12 | 18 | ns | VDD = 20 V, RL = 20 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall time | tf | 5.7 | 8.5 | ns | VDD = 20 V, RL = 20 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Pulsed current | ISM | 32 | A | 2 | |||
| Forward voltage | VSD | 0.8 | 1.2 | V | IF = 5.4 A, VGS = 0 V | 2 |
CAD (KiCad official)
- Symbol:
SQ2318AES-T1_BE3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
sq2318aes-t1-be3-etched.step/sq2318aes-t1-be3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sq2318aes-t1-be3.step/sq2318aes-t1-be3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
2f98a55d7bc91c32, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).