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SQ2309ES-T1_GE3

Vishay Intertech · MOSFETs · SOT-23

SQ2309ES-T1_GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; the absolute maximum gate-source voltage is ±20 V.
2 S passive Source of the P-channel MOSFET; the continuous source current (diode conduction) is limited to -2.6 A.
3 D passive Drain of the P-channel MOSFET, which also serves as the thermal connection from the package to the PC board; the drain-source voltage is limited to -60 V.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS -60 V VGS = 0 V, ID = - 250 μA 2
Gate-Source Threshold Voltage VGS(th) -1.5 -2 -2.5 V VDS = VGS, ID = - 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS = 0 V, VDS = - 60 V 2
Zero Gate Voltage Drain Current IDSS 50 μA VGS = 0 V, VDS = - 60 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 150 μA VGS = 0 V, VDS = - 60 V, TJ = 175 °C 2
On-State Drain Current ID(on) -5 A VGS = - 10 V VDS- 5 V 2
Drain-Source On-State Resistance RDS(on) 0.268 0.335 Ω VGS = - 10 V, ID = - 1.25 A 2
Drain-Source On-State Resistance RDS(on) 0.567 Ω VGS = - 10 V, ID = - 1.25 A, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.704 Ω VGS = - 10 V, ID = - 1.25 A, TJ = 175 °C 2
Drain-Source On-State Resistance RDS(on) 0.37 0.5 Ω VGS = - 4.5 V, ID = - 1 A 2
Input Capacitance Ciss 211 265 pF VGS = 0 V, VDS = - 25 V, f = 1 MHz 2
Output Capacitance Coss 30 40 pF VGS = 0 V, VDS = - 25 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 21 30 pF VGS = 0 V, VDS = - 25 V, f = 1 MHz 2
Total Gate Charge Qg 5.5 8.5 nC VGS = - 10 V, VDS = - 30 V, ID = - 1 A 2
Gate Resistance Rg 4.95 9.88 14.8 Ω f = 1 MHz 2
Rise Time tr 9 14 ns VDD = - 30 V, RL = 30 Ω, ID ≅ - 3 A, VGEN = - 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 12 18 ns VDD = - 30 V, RL = 30 Ω, ID ≅ - 3 A, VGEN = - 10 V, Rg = 1 Ω 2
Fall Time tf 9 14 ns VDD = - 30 V, RL = 30 Ω, ID ≅ - 3 A, VGEN = - 10 V, Rg = 1 Ω 2
Pulsed Current ISM -6.8 A 2
Forward Voltage VSD 0.85 1.2 V IF = - 1.5 A, VGS = 0 V 2
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -1.7 A TC = 25 °C 1
Continuous Drain Current ID -1 A TC = 125 °C 1
Continuous Source Current (Diode Conduction) IS -2.6 A 1
Pulsed Drain Current IDM -6.8 A 1
Single Pulse Avalanche Current IAS -15 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 11 mJ 1
Maximum Power Dissipation PD 2 W TC = 25 °C 1
Maximum Power Dissipation PD 0.6 W TC = 125 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient Thermal Resistance RthJA 166 °C/W PCB mount (see note b) 1
Junction-to-Foot (Drain) Thermal Resistance RthJF 73 °C/W 1

CAD (KiCad official)

  • Symbol: SQ2309ES-T1_GE3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: sq2309es-t1-ge3-etched.step / sq2309es-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sq2309es-t1-ge3.step / sq2309es-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (10 pp, sha256 a9b336b5d3b78415, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF