component
SQ2309ES-T1_GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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sq2309es-t1-ge3: specified limits as data (metadata.characteristics, 34 rows from the datasheet)
2 files changed
+457−1
README.md+41@@ -21,6 +21,47 @@ SQ2309ES-T1_GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Breakdown Voltage | VDS | -60 | | | V | VGS = 0 V, ID = - 250 μA | 2 |+| Gate-Source Threshold Voltage | VGS(th) | -1.5 | -2 | -2.5 | V | VDS = VGS, ID = - 250 μA | 2 |+| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VGS = 0 V, VDS = - 60 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 50 | μA | VGS = 0 V, VDS = - 60 V, TJ = 125 °C | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 150 | μA | VGS = 0 V, VDS = - 60 V, TJ = 175 °C | 2 |+| On-State Drain Current | ID(on) | -5 | | | A | VGS = - 10 V VDS- 5 V | 2 |+| Drain-Source On-State Resistance | RDS(on) | | 0.268 | 0.335 | Ω | VGS = - 10 V, ID = - 1.25 A | 2 |+| Drain-Source On-State Resistance | RDS(on) | | | 0.567 | Ω | VGS = - 10 V, ID = - 1.25 A, TJ = 125 °C | 2 |+| Drain-Source On-State Resistance | RDS(on) | | | 0.704 | Ω | VGS = - 10 V, ID = - 1.25 A, TJ = 175 °C | 2 |+| Drain-Source On-State Resistance | RDS(on) | | 0.37 | 0.5 | Ω | VGS = - 4.5 V, ID = - 1 A | 2 |+| Input Capacitance | Ciss | | 211 | 265 | pF | VGS = 0 V, VDS = - 25 V, f = 1 MHz | 2 |+| Output Capacitance | Coss | | 30 | 40 | pF | VGS = 0 V, VDS = - 25 V, f = 1 MHz | 2 |+| Reverse Transfer Capacitance | Crss | | 21 | 30 | pF | VGS = 0 V, VDS = - 25 V, f = 1 MHz | 2 |+| Total Gate Charge | Qg | | 5.5 | 8.5 | nC | VGS = - 10 V, VDS = - 30 V, ID = - 1 A | 2 |+| Gate Resistance | Rg | 4.95 | 9.88 | 14.8 | Ω | f = 1 MHz | 2 |+| Rise Time | tr | | 9 | 14 | ns | VDD = - 30 V, RL = 30 Ω, ID ≅ - 3 A, VGEN = - 10 V, Rg = 1 Ω | 2 |+| Turn-Off Delay Time | td(off) | | 12 | 18 | ns | VDD = - 30 V, RL = 30 Ω, ID ≅ - 3 A, VGEN = - 10 V, Rg = 1 Ω | 2 |+| Fall Time | tf | | 9 | 14 | ns | VDD = - 30 V, RL = 30 Ω, ID ≅ - 3 A, VGEN = - 10 V, Rg = 1 Ω | 2 |+| Pulsed Current | ISM | | | -6.8 | A | | 2 |+| Forward Voltage | VSD | | 0.85 | 1.2 | V | IF = - 1.5 A, VGS = 0 V | 2 |+| Drain-Source Voltage | VDS | -60 | | | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current | ID | -1.7 | | | A | TC = 25 °C | 1 |+| Continuous Drain Current | ID | -1 | | | A | TC = 125 °C | 1 |+| Continuous Source Current (Diode Conduction) | IS | -2.6 | | | A | | 1 |+| Pulsed Drain Current | IDM | -6.8 | | | A | | 1 |+| Single Pulse Avalanche Current | IAS | -15 | | | A | L = 0.1 mH | 1 |+| Single Pulse Avalanche Energy | EAS | | | 11 | mJ | | 1 |+| Maximum Power Dissipation | PD | | | 2 | W | TC = 25 °C | 1 |+| Maximum Power Dissipation | PD | | | 0.6 | W | TC = 125 °C | 1 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |+| Junction-to-Ambient Thermal Resistance | RthJA | | | 166 | °C/W | PCB mount (see note b) | 1 |+| Junction-to-Foot (Drain) Thermal Resistance | RthJF | | | 73 | °C/W | | 1 |+ ## CAD (KiCad official) - Symbol: `SQ2309ES-T1_GE3`
page.json+416−1@@ -151,6 +151,421 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "a9b336b5d3b78415",+ "rows": [+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": -60,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = - 250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1.5,+ "typ": -2,+ "max": -2.5,+ "conditions": "VDS = VGS, ID = - 250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ± 20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 0 V, VDS = - 60 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VGS = 0 V, VDS = - 60 V, TJ = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "VGS = 0 V, VDS = - 60 V, TJ = 175 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": -5,+ "typ": null,+ "max": null,+ "conditions": "VGS = - 10 V VDS- 5 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.268,+ "max": 0.335,+ "conditions": "VGS = - 10 V, ID = - 1.25 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.567,+ "conditions": "VGS = - 10 V, ID = - 1.25 A, TJ = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.704,+ "conditions": "VGS = - 10 V, ID = - 1.25 A, TJ = 175 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.37,+ "max": 0.5,+ "conditions": "VGS = - 4.5 V, ID = - 1 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 211,+ "max": 265,+ "conditions": "VGS = 0 V, VDS = - 25 V, f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 30,+ "max": 40,+ "conditions": "VGS = 0 V, VDS = - 25 V, f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 21,+ "max": 30,+ "conditions": "VGS = 0 V, VDS = - 25 V, f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 5.5,+ "max": 8.5,+ "conditions": "VGS = - 10 V, VDS = - 30 V, ID = - 1 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": 4.95,+ "typ": 9.88,+ "max": 14.8,+ "conditions": "f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 9,+ "max": 14,+ "conditions": "VDD = - 30 V, RL = 30 Ω, ID ≅ - 3 A, VGEN = - 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 12,+ "max": 18,+ "conditions": "VDD = - 30 V, RL = 30 Ω, ID ≅ - 3 A, VGEN = - 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 9,+ "max": 14,+ "conditions": "VDD = - 30 V, RL = 30 Ω, ID ≅ - 3 A, VGEN = - 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Current",+ "symbol": "ISM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -6.8,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.85,+ "max": 1.2,+ "conditions": "IF = - 1.5 A, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -60,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -1.7,+ "typ": null,+ "max": null,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -1,+ "typ": null,+ "max": null,+ "conditions": "TC = 125 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source Current (Diode Conduction)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -2.6,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -6.8,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Current",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -15,+ "typ": null,+ "max": null,+ "conditions": "L = 0.1 mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 11,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.6,+ "conditions": "TC = 125 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Thermal Resistance",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 166,+ "conditions": "PCB mount (see note b)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Foot (Drain) Thermal Resistance",+ "symbol": "RthJF",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 73,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -192,4 +607,4 @@ "visibility": { "public": true }-}+}